These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

281 related articles for article (PubMed ID: 25321523)

  • 1. Enhanced optical output performance in InGaN/GaN light-emitting diode embedded with SiO₂nanoparticles.
    Jeon DW; Jang LW; Cho HS; Kwon KS; Dong MJ; Polyakov AY; Ju JW; Chung TH; Baek JH; Lee IH
    Opt Express; 2014 Sep; 22(18):21454-9. PubMed ID: 25321523
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Enhanced performance of InGaN/GaN multiple-quantum-well light-emitting diodes grown on nanoporous GaN layers.
    Lee KJ; Kim SJ; Kim JJ; Hwang K; Kim ST; Park SJ
    Opt Express; 2014 Jun; 22 Suppl 4():A1164-73. PubMed ID: 24978079
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Enhanced optical output power of InGaN/GaN light-emitting diodes grown on a silicon (111) substrate with a nanoporous GaN layer.
    Lee KJ; Chun J; Kim SJ; Oh S; Ha CS; Park JW; Lee SJ; Song JC; Baek JH; Park SJ
    Opt Express; 2016 Mar; 24(5):4391-4398. PubMed ID: 29092267
    [TBL] [Abstract][Full Text] [Related]  

  • 4. High efficiency GaN-based light-emitting diodes with embedded air voids/SiO2 nanomasks.
    Chiu CH; Lin CC; Han HV; Liu CY; Chen YH; Lan YP; Yu P; Kuo HC; Lu TC; Wang SC; Chang CY
    Nanotechnology; 2012 Feb; 23(4):045303. PubMed ID: 22222308
    [TBL] [Abstract][Full Text] [Related]  

  • 5. High-efficiency light-emitting diode with air voids embedded in lateral epitaxially overgrown GaN using a metal mask.
    Cho CY; Kwon MK; Park IK; Hong SH; Kim JJ; Park SE; Kim ST; Park SJ
    Opt Express; 2011 Jul; 19 Suppl 4():A943-8. PubMed ID: 21747565
    [TBL] [Abstract][Full Text] [Related]  

  • 6. InGaN light-emitting diodes with oblique sidewall facets formed by selective growth on SiO₂ patterned GaN film.
    Sheu JK; Chang KH; Tu SJ; Lee ML; Yang CC; Hsu CK; Lai WC
    Opt Express; 2010 Nov; 18 Suppl 4():A562-7. PubMed ID: 21165089
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Improvement of light output power of InGaN/GaN light-emitting diode by lateral epitaxial overgrowth using pyramidal-shaped SiO(2).
    Cho CY; Lee JB; Lee SJ; Han SH; Park TY; Kim JW; Kim YC; Park SJ
    Opt Express; 2010 Jan; 18(2):1462-8. PubMed ID: 20173974
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Efficiency improvement and droop behavior in nanospherical-lens lithographically patterned bottom and top photonic crystal InGaN/GaN light-emitting diodes.
    Wei T; Ji X; Wu K; Zheng H; Du C; Chen Y; Yan Q; Zhao L; Zhou Z; Wang J; Li J
    Opt Lett; 2014 Jan; 39(2):379-82. PubMed ID: 24562151
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Analysis of light extraction efficiency enhancement for thin-film-flip-chip InGaN quantum wells light-emitting diodes with GaN micro-domes.
    Zhao P; Zhao H
    Opt Express; 2012 Sep; 20 Suppl 5():A765-76. PubMed ID: 23037543
    [TBL] [Abstract][Full Text] [Related]  

  • 10. InGaN-based light-emitting diodes with an embedded conical air-voids structure.
    Huang YC; Lin CF; Chen SH; Dai JJ; Wang GM; Huang KP; Chen KT; Hsu YH
    Opt Express; 2011 Jan; 19 Suppl 1():A57-63. PubMed ID: 21263713
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Efficient stress-relaxation in InGaN/GaN light-emitting diodes using carbon nanotubes.
    Park AH; Seo TH; Chandramohan S; Lee GH; Min KH; Lee S; Kim MJ; Hwang YG; Suh EK
    Nanoscale; 2015 Oct; 7(37):15099-105. PubMed ID: 26351123
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Transparent conductive oxide films embedded with plasmonic nanostructure for light-emitting diode applications.
    Chuang SH; Tsung CS; Chen CH; Ou SL; Horng RH; Lin CY; Wuu DS
    ACS Appl Mater Interfaces; 2015 Feb; 7(4):2546-53. PubMed ID: 25562635
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Phosphor-Free Apple-White LEDs with Embedded Indium-Rich Nanostructures Grown on Strain Relaxed Nano-epitaxy GaN.
    Soh CB; Liu W; Yong AM; Chua SJ; Chow SY; Tripathy S; Tan RJ
    Nanoscale Res Lett; 2010 Aug; 5(11):1788-1794. PubMed ID: 21124627
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Effect of the thickness of undoped GaN interlayers between multiple quantum wells and the p-doped layer on the performance of GaN light-emitting diodes.
    Lu T; Li S; Zhang K; Liu C; Yin Y; Wu L; Wang H; Yang X; Xiao G; Zhou Y
    Opt Express; 2011 Sep; 19(19):18319-23. PubMed ID: 21935200
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Enhanced optical output power of InGaN/GaN vertical light-emitting diodes by ZnO nanorods on plasma-treated N-face GaN.
    Leem YC; Kim NY; Lim W; Kim ST; Park SJ
    Nanoscale; 2014 Sep; 6(17):10187-92. PubMed ID: 25046799
    [TBL] [Abstract][Full Text] [Related]  

  • 16. MQWs InGaN/GaN LED with embedded micro-mirror array in the epitaxial-lateral-overgrowth gallium nitride for light extraction enhancement.
    Huang CY; Ku HM; Liao CZ; Chao S
    Opt Express; 2010 May; 18(10):10674-84. PubMed ID: 20588920
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Enhanced optical output in InGaN/GaN light-emitting diodes by tailored refractive index of nanoporous GaN.
    Lee KJ; Oh S; Kim SJ; Yim SY; Myoung N; Lee K; Kim JS; Jung SH; Chung TH; Park SJ
    Nanotechnology; 2019 Oct; 30(41):415301. PubMed ID: 31300618
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Enhanced optical output of InGaN/GaN near-ultraviolet light-emitting diodes by localized surface plasmon of colloidal silver nanoparticles.
    Hong SH; Kim JJ; Kang JW; Jung YS; Kim DY; Yim SY; Park SJ
    Nanotechnology; 2015 Sep; 26(38):385204. PubMed ID: 26335045
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Efficiency enhancement of homoepitaxial InGaN/GaN light-emitting diodes on free-standing GaN substrate with double embedded SiO2 photonic crystals.
    Wei T; Huo Z; Zhang Y; Zheng H; Chen Y; Yang J; Hu Q; Duan R; Wang J; Zeng Y; Li J
    Opt Express; 2014 Jun; 22 Suppl 4():A1093-100. PubMed ID: 24978072
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Enhanced performance of InGaN-based light emitting diodes through a special etch and regrown process in n-GaN layer.
    Fu B; Kang J; Wei T; Liu Z; Liu Z; Liu N; Xiong Z; Li Z; Wei X; Lu H; Yi X; Li J; Wang J
    Opt Express; 2014 Aug; 22 Suppl 5():A1284-91. PubMed ID: 25322183
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 15.