These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

220 related articles for article (PubMed ID: 25321793)

  • 21. The role of wetting layer states on the emission efficiency of InAs/InGaAs metamorphic quantum dot nanostructures.
    Seravalli L; Trevisi G; Frigeri P; Franchi S; Geddo M; Guizzetti G
    Nanotechnology; 2009 Jul; 20(27):275703. PubMed ID: 19531853
    [TBL] [Abstract][Full Text] [Related]  

  • 22. Effects of intermixing on modulation p-doped quantum dot superluminescent light emitting diodes.
    Zhang ZY; Jiang Q; Hopkinson M; Hogg RA
    Opt Express; 2010 Mar; 18(7):7055-63. PubMed ID: 20389726
    [TBL] [Abstract][Full Text] [Related]  

  • 23. Strong extinction of a far-field laser beam by a single quantum dot.
    Vamivakas AN; Atatüre M; Dreiser J; Yilmaz ST; Badolato A; Swan AK; Goldberg BB; Imamoglu A; Unlü MS
    Nano Lett; 2007 Sep; 7(9):2892-6. PubMed ID: 17691853
    [TBL] [Abstract][Full Text] [Related]  

  • 24. 574-647 nm wavelength tuning by second-harmonic generation from diode-pumped PPKTP waveguides.
    Fedorova KA; Sokolovskii GS; Battle PR; Livshits DA; Rafailov EU
    Opt Lett; 2015 Mar; 40(5):835-8. PubMed ID: 25723445
    [TBL] [Abstract][Full Text] [Related]  

  • 25. In situ mask designed for selective growth of InAs quantum dots in narrow regions developed for molecular beam epitaxy system.
    Ohkouchi S; Nakamura Y; Ikeda N; Sugimoto Y; Asakawa K
    Rev Sci Instrum; 2007 Jul; 78(7):073908. PubMed ID: 17672774
    [TBL] [Abstract][Full Text] [Related]  

  • 26. 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates.
    Wang T; Liu H; Lee A; Pozzi F; Seeds A
    Opt Express; 2011 Jun; 19(12):11381-6. PubMed ID: 21716368
    [TBL] [Abstract][Full Text] [Related]  

  • 27. Optically pumped rolled-up InGaAs/GaAs quantum dot microtube lasers.
    Li F; Mi Z
    Opt Express; 2009 Oct; 17(22):19933-9. PubMed ID: 19997217
    [TBL] [Abstract][Full Text] [Related]  

  • 28. 1300 nm wavelength InAs quantum dot photodetector grown on silicon.
    Sandall I; Ng JS; David JP; Tan CH; Wang T; Liu H
    Opt Express; 2012 May; 20(10):10446-52. PubMed ID: 22565669
    [TBL] [Abstract][Full Text] [Related]  

  • 29. Leveraging crystal anisotropy for deterministic growth of InAs quantum dots with narrow optical linewidths.
    Yakes MK; Yang L; Bracker AS; Sweeney TM; Brereton PG; Kim M; Kim CS; Vora PM; Park D; Carter SG; Gammon D
    Nano Lett; 2013 Oct; 13(10):4870-5. PubMed ID: 23987910
    [TBL] [Abstract][Full Text] [Related]  

  • 30. Tunable double quantum dots in InAs nanowires defined by local gate electrodes.
    Fasth C; Fuhrer A; Björk MT; Samuelson L
    Nano Lett; 2005 Jul; 5(7):1487-90. PubMed ID: 16178262
    [TBL] [Abstract][Full Text] [Related]  

  • 31. Intersublevel infrared photodetector with strain-free GaAs quantum dot pairs grown by high-temperature droplet epitaxy.
    Wu J; Shao D; Dorogan VG; Li AZ; Li S; DeCuir EA; Manasreh MO; Wang ZM; Mazur YI; Salamo GJ
    Nano Lett; 2010 Apr; 10(4):1512-6. PubMed ID: 20356102
    [TBL] [Abstract][Full Text] [Related]  

  • 32. Electrically pumped continuous-wave 1.3 µm InAs/GaAs quantum dot lasers monolithically grown on on-axis Si (001) substrates.
    Chen S; Liao M; Tang M; Wu J; Martin M; Baron T; Seeds A; Liu H
    Opt Express; 2017 Mar; 25(5):4632-4639. PubMed ID: 28380734
    [TBL] [Abstract][Full Text] [Related]  

  • 33. GaAs-based nanoneedle light emitting diode and avalanche photodiode monolithically integrated on a silicon substrate.
    Chuang LC; Sedgwick FG; Chen R; Ko WS; Moewe M; Ng KW; Tran TT; Chang-Hasnain C
    Nano Lett; 2011 Feb; 11(2):385-90. PubMed ID: 21174451
    [TBL] [Abstract][Full Text] [Related]  

  • 34. Room-temperature broadband emission of an InGaAs/GaAs quantum dots laser.
    Djie HS; Ooi BS; Fang XM; Wu Y; Fastenau JM; Liu WK; Hopkinson M
    Opt Lett; 2007 Jan; 32(1):44-6. PubMed ID: 17167578
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Tunable Emission Wavelength Stacked InAs/GaAs Quantum Dots by Chemical Beam Epitaxy for Optical Coherence Tomography.
    Ilahi B; Zribi J; Guillotte M; Arès R; Aimez V; Morris D
    Materials (Basel); 2016 Jun; 9(7):. PubMed ID: 28773633
    [TBL] [Abstract][Full Text] [Related]  

  • 36. Nanolasers grown on silicon-based MOSFETs.
    Lu F; Tran TT; Ko WS; Ng KW; Chen R; Chang-Hasnain C
    Opt Express; 2012 May; 20(11):12171-6. PubMed ID: 22714204
    [TBL] [Abstract][Full Text] [Related]  

  • 37. Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser.
    Du Y; Wei W; Xu B; Wang G; Li B; Miao Y; Zhao X; Kong Z; Lin H; Yu J; Su J; Dong Y; Wang W; Ye T; Zhang J; Radamson HH
    Micromachines (Basel); 2022 Sep; 13(10):. PubMed ID: 36295932
    [TBL] [Abstract][Full Text] [Related]  

  • 38. Filling of hole arrays with InAs quantum dots.
    Lee JY; Noordhoek MJ; Smereka P; McKay H; Millunchick JM
    Nanotechnology; 2009 Jul; 20(28):285305. PubMed ID: 19546494
    [TBL] [Abstract][Full Text] [Related]  

  • 39. Integration of epitaxially-grown InGaAs/GaAs quantum dot lasers with hydrogenated amorphous silicon waveguides on silicon.
    Yang J; Bhattacharya P
    Opt Express; 2008 Mar; 16(7):5136-40. PubMed ID: 18542613
    [TBL] [Abstract][Full Text] [Related]  

  • 40. An L-band monolithic InAs/InP quantum dot mode-locked laser with femtosecond pulses.
    Lu ZG; Liu JR; Poole PJ; Raymond S; Barrios PJ; Poitras D; Pakulski G; Grant P; Roy-Guay D
    Opt Express; 2009 Aug; 17(16):13609-14. PubMed ID: 19654768
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 11.