These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
413 related articles for article (PubMed ID: 25329532)
1. Ambipolar phosphorene field effect transistor. Das S; Demarteau M; Roelofs A ACS Nano; 2014 Nov; 8(11):11730-8. PubMed ID: 25329532 [TBL] [Abstract][Full Text] [Related]
2. Device perspective for black phosphorus field-effect transistors: contact resistance, ambipolar behavior, and scaling. Du Y; Liu H; Deng Y; Ye PD ACS Nano; 2014 Oct; 8(10):10035-42. PubMed ID: 25314022 [TBL] [Abstract][Full Text] [Related]
3. Tunable transport gap in phosphorene. Das S; Zhang W; Demarteau M; Hoffmann A; Dubey M; Roelofs A Nano Lett; 2014 Oct; 14(10):5733-9. PubMed ID: 25111042 [TBL] [Abstract][Full Text] [Related]
5. Schottky Barriers in Bilayer Phosphorene Transistors. Pan Y; Dan Y; Wang Y; Ye M; Zhang H; Quhe R; Zhang X; Li J; Guo W; Yang L; Lu J ACS Appl Mater Interfaces; 2017 Apr; 9(14):12694-12705. PubMed ID: 28322554 [TBL] [Abstract][Full Text] [Related]
6. Improved carrier mobility in few-layer MoS2 field-effect transistors with ionic-liquid gating. Perera MM; Lin MW; Chuang HJ; Chamlagain BP; Wang C; Tan X; Cheng MM; Tománek D; Zhou Z ACS Nano; 2013 May; 7(5):4449-58. PubMed ID: 23590723 [TBL] [Abstract][Full Text] [Related]
7. Control of Ambipolar Transport in SnO Thin-Film Transistors by Back-Channel Surface Passivation for High Performance Complementary-like Inverters. Luo H; Liang L; Cao H; Dai M; Lu Y; Wang M ACS Appl Mater Interfaces; 2015 Aug; 7(31):17023-31. PubMed ID: 26189702 [TBL] [Abstract][Full Text] [Related]
9. Ambipolar MoS Giannazzo F; Fisichella G; Greco G; Di Franco S; Deretzis I; La Magna A; Bongiorno C; Nicotra G; Spinella C; Scopelliti M; Pignataro B; Agnello S; Roccaforte F ACS Appl Mater Interfaces; 2017 Jul; 9(27):23164-23174. PubMed ID: 28603968 [TBL] [Abstract][Full Text] [Related]
10. Ambipolar Charge Transport in Two-Dimensional WS Lee G; Oh S; Kim J; Kim J ACS Appl Mater Interfaces; 2020 May; 12(20):23127-23133. PubMed ID: 32337986 [TBL] [Abstract][Full Text] [Related]
11. Flexible black phosphorus ambipolar transistors, circuits and AM demodulator. Zhu W; Yogeesh MN; Yang S; Aldave SH; Kim JS; Sonde S; Tao L; Lu N; Akinwande D Nano Lett; 2015 Mar; 15(3):1883-90. PubMed ID: 25715122 [TBL] [Abstract][Full Text] [Related]
12. Contact Resistance in Ambipolar Organic Field-Effect Transistors Measured by Confocal Photoluminescence Electro-Modulation Microscopy. Koopman WWA; Natali M; Bettini C; Melucci M; Muccini M; Toffanin S ACS Appl Mater Interfaces; 2018 Oct; 10(41):35411-35419. PubMed ID: 30230308 [TBL] [Abstract][Full Text] [Related]
13. Field effect transistors with current saturation and voltage gain in ultrathin ReS2. Corbet CM; McClellan C; Rai A; Sonde SS; Tutuc E; Banerjee SK ACS Nano; 2015 Jan; 9(1):363-70. PubMed ID: 25514177 [TBL] [Abstract][Full Text] [Related]
14. Channel Length-Dependent Operation of Ambipolar Schottky-Barrier Transistors on a Single Si Nanowire. Park SJ; Jeon DY; Sessi V; Trommer J; Heinzig A; Mikolajick T; Kim GT; Weber WM ACS Appl Mater Interfaces; 2020 Sep; 12(39):43927-43932. PubMed ID: 32880433 [TBL] [Abstract][Full Text] [Related]
15. Static and Dynamic Performance of Complementary Inverters Based on Nanosheet α-MoTe2 p-Channel and MoS2 n-Channel Transistors. Pezeshki A; Hosseini Shokouh SH; Jeon PJ; Shackery I; Kim JS; Oh IK; Jun SC; Kim H; Im S ACS Nano; 2016 Jan; 10(1):1118-25. PubMed ID: 26631357 [TBL] [Abstract][Full Text] [Related]
16. Multiple Schottky Barrier-Limited Field-Effect Transistors on a Single Silicon Nanowire with an Intrinsic Doping Gradient. Barreda JL; Keiper TD; Zhang M; Xiong P ACS Appl Mater Interfaces; 2017 Apr; 9(13):12046-12053. PubMed ID: 28274114 [TBL] [Abstract][Full Text] [Related]
17. Experimental and numerical investigation of contact-area-limited doping for top-contact pentacene thin-film transistors with Schottky contact. Noda K; Wada Y; Toyabe T Phys Chem Chem Phys; 2015 Oct; 17(40):26535-40. PubMed ID: 24922359 [TBL] [Abstract][Full Text] [Related]
18. Controlling Polarity of MoTe Liu X; Islam A; Guo J; Feng PX ACS Nano; 2020 Feb; 14(2):1457-1467. PubMed ID: 31909988 [TBL] [Abstract][Full Text] [Related]
19. Phosphorene: an unexplored 2D semiconductor with a high hole mobility. Liu H; Neal AT; Zhu Z; Luo Z; Xu X; Tománek D; Ye PD ACS Nano; 2014 Apr; 8(4):4033-41. PubMed ID: 24655084 [TBL] [Abstract][Full Text] [Related]
20. Highly Stable and Tunable Chemical Doping of Multilayer WS2 Field Effect Transistor: Reduction in Contact Resistance. Khalil HM; Khan MF; Eom J; Noh H ACS Appl Mater Interfaces; 2015 Oct; 7(42):23589-96. PubMed ID: 26434774 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]