These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
194 related articles for article (PubMed ID: 25330094)
21. Sharpening the Interfaces of Axial Heterostructures in Self-Catalyzed AlGaAs Nanowires: Experiment and Theory. Priante G; Glas F; Patriarche G; Pantzas K; Oehler F; Harmand JC Nano Lett; 2016 Mar; 16(3):1917-24. PubMed ID: 26840359 [TBL] [Abstract][Full Text] [Related]
22. Antimony-mediated control of misfit dislocations and strain at the highly lattice mismatched GaSb/GaAs interface. Wang Y; Ruterana P; Chen J; Kret S; El Kazzi S; Genevois C; Desplanque L; Wallart X ACS Appl Mater Interfaces; 2013 Oct; 5(19):9760-4. PubMed ID: 24024581 [TBL] [Abstract][Full Text] [Related]
23. Quasi One-Dimensional Metal-Semiconductor Heterostructures. Benter S; Dubrovskii VG; Bartmann M; Campo A; Zardo I; Sistani M; Stöger-Pollach M; Lancaster S; Detz H; Lugstein A Nano Lett; 2019 Jun; 19(6):3892-3897. PubMed ID: 31117757 [TBL] [Abstract][Full Text] [Related]
24. Strain-induced structural defects and their effects on the electrochemical performances of silicon core/germanium shell nanowire heterostructures. Lin YC; Kim D; Li Z; Nguyen BM; Li N; Zhang S; Yoo J Nanoscale; 2017 Jan; 9(3):1213-1220. PubMed ID: 28050613 [TBL] [Abstract][Full Text] [Related]
26. Quantitative analysis of interfacial strain in InAs/GaSb superlattices by aberration-corrected HRTEM and HAADF-STEM. Mahalingam K; Haugan HJ; Brown GJ; Eyink KG Ultramicroscopy; 2013 Apr; 127():70-5. PubMed ID: 23298538 [TBL] [Abstract][Full Text] [Related]
27. Ferroelectric Enhanced Performance of a GeSn/Ge Dual-Nanowire Photodetector. Yang Y; Wang X; Wang C; Song Y; Zhang M; Xue Z; Wang S; Zhu Z; Liu G; Li P; Dong L; Mei Y; Chu PK; Hu W; Wang J; Di Z Nano Lett; 2020 May; 20(5):3872-3879. PubMed ID: 32293186 [TBL] [Abstract][Full Text] [Related]
28. Morphological instability in InAs/GaSb superlattices due to interfacial bonds. Li JH; Stokes DW; Caha O; Ammu SL; Bai J; Bassler KE; Moss SC Phys Rev Lett; 2005 Aug; 95(9):096104. PubMed ID: 16197232 [TBL] [Abstract][Full Text] [Related]
29. Compositional analysis of mixed-cation-anion III-V semiconductor interfaces using phase retrieval high-resolution transmission electron microscopy. Mahalingam K; Eyink KG; Brown GJ; Dorsey DL; Kisielowski CF; Thust A J Microsc; 2008 Jun; 230(Pt 3):372-81. PubMed ID: 18503662 [TBL] [Abstract][Full Text] [Related]
30. Semiconductor Nanowire Light-Emitting Diodes Grown on Metal: A Direction Toward Large-Scale Fabrication of Nanowire Devices. Sarwar AT; Carnevale SD; Yang F; Kent TF; Jamison JJ; McComb DW; Myers RC Small; 2015 Oct; 11(40):5402-8. PubMed ID: 26307552 [TBL] [Abstract][Full Text] [Related]
32. At the Limit of Interfacial Sharpness in Nanowire Axial Heterostructures. Hilliard D; Tauchnitz T; Hübner R; Vasileiadis I; Gkotinakos A; Dimitrakopulos G; Komninou P; Sun X; Winnerl S; Schneider H; Helm M; Dimakis E ACS Nano; 2024 Aug; 18(32):21171-21183. PubMed ID: 38970499 [TBL] [Abstract][Full Text] [Related]
33. Physical mechanism of surface roughening of the radial Ge-core/Si-shell nanowire heterostructure and thermodynamic prediction of surface stability of the InAs-core/GaAs-shell nanowire structure. Cao YY; Ouyang G; Wang CX; Yang GW Nano Lett; 2013 Feb; 13(2):436-43. PubMed ID: 23297740 [TBL] [Abstract][Full Text] [Related]
34. Lattice Strain Relaxation and Compositional Control in As-Rich GaAsP/(100)GaAs Heterostructures Grown by MOVPE. Prete P; Calabriso D; Burresi E; Tapfer L; Lovergine N Materials (Basel); 2023 Jun; 16(12):. PubMed ID: 37374438 [TBL] [Abstract][Full Text] [Related]
35. Growth of Self-Catalyzed InAs/InSb Axial Heterostructured Nanowires: Experiment and Theory. Arif O; Zannier V; Dubrovskii VG; Shtrom IV; Rossi F; Beltram F; Sorba L Nanomaterials (Basel); 2020 Mar; 10(3):. PubMed ID: 32164178 [TBL] [Abstract][Full Text] [Related]
36. Self-Consistent Model for the Compositional Profiles in Vapor-Liquid-Solid III-V Nanowire Heterostructures Based on Group V Interchange. Dubrovskii VG Nanomaterials (Basel); 2024 May; 14(10):. PubMed ID: 38786777 [TBL] [Abstract][Full Text] [Related]
37. Effect of Interfacial Schemes on the Optical and Structural Properties of InAs/GaSb Type-II Superlattices. Alshahrani D; Kesaria M; Jiménez JJ; Kwan D; Srivastava V; Delmas M; Morales FM; Liang B; Huffaker D ACS Appl Mater Interfaces; 2023 Feb; 15(6):8624-8635. PubMed ID: 36724387 [TBL] [Abstract][Full Text] [Related]
38. Axial GaAs/Ga(As, Bi) nanowire heterostructures. Oliva M; Gao G; Luna E; Geelhaar L; Lewis RB Nanotechnology; 2019 Oct; 30(42):425601. PubMed ID: 31304919 [TBL] [Abstract][Full Text] [Related]
39. Controlling the abruptness of axial heterojunctions in III-V nanowires: beyond the reservoir effect. Dick KA; Bolinsson J; Borg BM; Johansson J Nano Lett; 2012 Jun; 12(6):3200-6. PubMed ID: 22642741 [TBL] [Abstract][Full Text] [Related]
40. Monolithic Axial and Radial Metal-Semiconductor Nanowire Heterostructures. Sistani M; Luong MA; den Hertog MI; Robin E; Spies M; Fernandez B; Yao J; Bertagnolli E; Lugstein A Nano Lett; 2018 Dec; 18(12):7692-7697. PubMed ID: 30427682 [TBL] [Abstract][Full Text] [Related] [Previous] [Next] [New Search]