These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
181 related articles for article (PubMed ID: 25337061)
1. The electronic and optical properties of quaternary GaAs1-x-y N x Bi y alloy lattice-matched to GaAs: a first-principles study. Ma X; Li D; Zhao S; Li G; Yang K Nanoscale Res Lett; 2014; 9(1):580. PubMed ID: 25337061 [TBL] [Abstract][Full Text] [Related]
2. Electronic and optical properties of quaternary alloy GaAsBiN lattice-matched to GaAs. Su M; Li C; Yuan P; Rao F; Jia Y; Wang F Opt Express; 2014 Dec; 22(25):30633-40. PubMed ID: 25607011 [TBL] [Abstract][Full Text] [Related]
3. First-Principles Study of Bi-Doping Effects in Hg Sun X; Su X; Li D; Cao L Molecules; 2021 Aug; 26(16):. PubMed ID: 34443435 [TBL] [Abstract][Full Text] [Related]
4. Density Functional Theory Study of the Gas Phase and Surface Reaction Kinetics for the MOVPE Growth of GaAs Lucas RC; Morgan D; Kuech TF J Phys Chem A; 2020 Mar; 124(9):1682-1697. PubMed ID: 32027504 [TBL] [Abstract][Full Text] [Related]
5. Tailoring the Valence Band Offset of Al2O3 on Epitaxial GaAs(1-y)Sb(y) with Tunable Antimony Composition. Liu JS; Clavel M; Hudait MK ACS Appl Mater Interfaces; 2015 Dec; 7(51):28624-31. PubMed ID: 26642121 [TBL] [Abstract][Full Text] [Related]
6. Axial GaAs/Ga(As, Bi) nanowire heterostructures. Oliva M; Gao G; Luna E; Geelhaar L; Lewis RB Nanotechnology; 2019 Oct; 30(42):425601. PubMed ID: 31304919 [TBL] [Abstract][Full Text] [Related]
7. Structural Origin of the Band Gap Anomaly of Quaternary Alloy Cd(x)Zn(1-x)S(y)Se(1-y) Nanowires, Nanobelts, and Nanosheets in the Visible Spectrum. Kwon SJ; Jeong HM; Jung K; Ko DH; Ko H; Han IK; Kim GT; Park JG ACS Nano; 2015 May; 9(5):5486-99. PubMed ID: 25897466 [TBL] [Abstract][Full Text] [Related]
8. First principles study of bismuth alloying effects in GaAs saturable absorber. Li D; Yang M; Zhao S; Cai Y; Feng Y Opt Express; 2012 May; 20(10):11574-80. PubMed ID: 22565776 [TBL] [Abstract][Full Text] [Related]
13. Near Full-Composition-Range High-Quality GaAs Li L; Pan D; Xue Y; Wang X; Lin M; Su D; Zhang Q; Yu X; So H; Wei D; Sun B; Tan P; Pan A; Zhao J Nano Lett; 2017 Feb; 17(2):622-630. PubMed ID: 28103038 [TBL] [Abstract][Full Text] [Related]
14. Determination of the electronic, dielectric, and optical properties of sillenite Bi12TiO20 and perovskite-like Bi4Ti3O12 materials from hybrid first-principle calculations. Lardhi S; Noureldine D; Harb M; Ziani A; Cavallo L; Takanabe K J Chem Phys; 2016 Apr; 144(13):134702. PubMed ID: 27059580 [TBL] [Abstract][Full Text] [Related]
16. Structural and Electronic Properties of Bulk ZnX (X = O, S, Se, Te), ZnF Flores EM; Moreira ML; Piotrowski MJ J Phys Chem A; 2020 May; 124(19):3778-3785. PubMed ID: 32329619 [TBL] [Abstract][Full Text] [Related]
17. Novel hybrid monolayers Si Ahmed T; Subrina S Phys Chem Chem Phys; 2022 Apr; 24(16):9475-9491. PubMed ID: 35388812 [TBL] [Abstract][Full Text] [Related]
18. Effects of AlGaAs cladding layers on the luminescence of GaAs/GaAs1-xBix/GaAs heterostructures. Mazur YI; Dorogan VG; de Souza LD; Fan D; Benamara M; Schmidbauer M; Ware ME; Tarasov GG; Yu SQ; Marques GE; Salamo GJ Nanotechnology; 2014 Jan; 25(3):035702. PubMed ID: 24346504 [TBL] [Abstract][Full Text] [Related]
19. Bismuth-induced effects on optical, lattice vibrational, and structural properties of bulk GaAsBi alloys. Sarcan F; Dönmez O; Kara K; Erol A; Akalın E; Cetin Arıkan M; Makhloufi H; Arnoult A; Fontaine C Nanoscale Res Lett; 2014 Mar; 9(1):119. PubMed ID: 24629075 [TBL] [Abstract][Full Text] [Related]
20. Interface Engineering of Cu(In,Ga)Se Wang R; Lan M; Zheng Y; Yang J; Li B; Wei SH ACS Appl Mater Interfaces; 2021 Apr; 13(13):15237-15245. PubMed ID: 33760577 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]