These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

171 related articles for article (PubMed ID: 25339242)

  • 21. Electron dephasing of a GaAs/AlGaAs quantum well with self-assembled InAs dots.
    Li L; Wang J; Kim GH; Ritchie DA
    J Phys Condens Matter; 2012 Sep; 24(38):385301. PubMed ID: 22945470
    [TBL] [Abstract][Full Text] [Related]  

  • 22. Fine structure of excitons in InAs/GaAs coupled auantum dots: a sensitive test of electronic coupling.
    Ortner G; Bayer M; Larionov A; Timofeev VB; Forchel A; Lyanda-Geller YB; Reinecke TL; Hawrylak P; Fafard S; Wasilewski Z
    Phys Rev Lett; 2003 Feb; 90(8):086404. PubMed ID: 12633447
    [TBL] [Abstract][Full Text] [Related]  

  • 23. Polarization Anisotropies in Strain-Free, Asymmetric, and Symmetric Quantum Dots Grown by Droplet Epitaxy.
    Abbarchi M; Mano T; Kuroda T; Ohtake A; Sakoda K
    Nanomaterials (Basel); 2021 Feb; 11(2):. PubMed ID: 33578657
    [TBL] [Abstract][Full Text] [Related]  

  • 24. Effect of mechanical strain on the optical properties of quantum dots: controlling exciton shape, orientation, and phase with a mechanical strain.
    Bryant GW; Zieliński M; Malkova N; Sims J; Jaskólski W; Aizpurua J
    Phys Rev Lett; 2010 Aug; 105(6):067404. PubMed ID: 20868012
    [TBL] [Abstract][Full Text] [Related]  

  • 25. Photoluminescence up-conversion in single self-assembled InAs/GaAs quantum dots.
    Kammerer C; Cassabois G; Voisin C; Delalande C; Roussignol P; Gérard JM
    Phys Rev Lett; 2001 Nov; 87(20):207401. PubMed ID: 11690509
    [TBL] [Abstract][Full Text] [Related]  

  • 26. Fine structure of negatively and positively charged excitons in semiconductor quantum dots: electron-hole asymmetry.
    Ediger M; Bester G; Gerardot BD; Badolato A; Petroff PM; Karrai K; Zunger A; Warburton RJ
    Phys Rev Lett; 2007 Jan; 98(3):036808. PubMed ID: 17358715
    [TBL] [Abstract][Full Text] [Related]  

  • 27. Anomalous Hanle effect due to optically created transverse overhauser field in single InAs/GaAs quantum dots.
    Krebs O; Maletinsky P; Amand T; Urbaszek B; Lemaître A; Voisin P; Marie X; Imamoglu A
    Phys Rev Lett; 2010 Feb; 104(5):056603. PubMed ID: 20366781
    [TBL] [Abstract][Full Text] [Related]  

  • 28. Narrow emission linewidths of positioned InAs quantum dots grown on pre-patterned GaAs(100) substrates.
    Skiba-Szymanska J; Jamil A; Farrer I; Ward MB; Nicoll CA; Ellis DJ; Griffiths JP; Anderson D; Jones GA; Ritchie DA; Shields AJ
    Nanotechnology; 2011 Feb; 22(6):065302. PubMed ID: 21212488
    [TBL] [Abstract][Full Text] [Related]  

  • 29. Electrical control of hole spin relaxation in charge tunable InAs/GaAs quantum dots.
    Laurent S; Eble B; Krebs O; Lemaître A; Urbaszek B; Marie X; Amand T; Voisin P
    Phys Rev Lett; 2005 Apr; 94(14):147401. PubMed ID: 15904109
    [TBL] [Abstract][Full Text] [Related]  

  • 30. High quality InAs quantum dots grown on patterned Si with a GaAs buffer layer.
    Wang Y; Zou J; Zhao ZM; Hao Z; Wang KL
    Nanotechnology; 2009 Jul; 20(30):305301. PubMed ID: 19581699
    [TBL] [Abstract][Full Text] [Related]  

  • 31. Nanometer-scale resolution of strain and interdiffusion in self-assembled InAs/GaAs quantum dots.
    Kegel I; Metzger TH; Lorke A; Peisl J; Stangl J; Bauer G; Garcia JM; Petroff PM
    Phys Rev Lett; 2000 Aug; 85(8):1694-7. PubMed ID: 10970591
    [TBL] [Abstract][Full Text] [Related]  

  • 32. Exciton fine structure splitting in InP quantum dots in GaInP.
    Ellström C; Seifert W; Pryor C; Samuelson L; Pistol ME
    J Phys Condens Matter; 2007 Jul; 19(29):295211. PubMed ID: 21483063
    [TBL] [Abstract][Full Text] [Related]  

  • 33. Tuning the exciton binding energies in single self-assembled InGaAs/GaAs quantum dots by piezoelectric-induced biaxial stress.
    Ding F; Singh R; Plumhof JD; Zander T; Krápek V; Chen YH; Benyoucef M; Zwiller V; Dörr K; Bester G; Rastelli A; Schmidt OG
    Phys Rev Lett; 2010 Feb; 104(6):067405. PubMed ID: 20366855
    [TBL] [Abstract][Full Text] [Related]  

  • 34. Excited-state relaxation in PbSe quantum dots.
    An JM; Califano M; Franceschetti A; Zunger A
    J Chem Phys; 2008 Apr; 128(16):164720. PubMed ID: 18447492
    [TBL] [Abstract][Full Text] [Related]  

  • 35. [Photoluminescence investigation of InAs bimodal self-assembled quantum dots state filling].
    Jia GZ; Yao JH; Zhang CL; Shu Q; Liu RB; Ye XL; Wang ZG
    Guang Pu Xue Yu Guang Pu Fen Xi; 2007 Nov; 27(11):2178-81. PubMed ID: 18260388
    [TBL] [Abstract][Full Text] [Related]  

  • 36. Exciton fine structure and spin relaxation in semiconductor colloidal quantum dots.
    Kim J; Wong CY; Scholes GD
    Acc Chem Res; 2009 Aug; 42(8):1037-46. PubMed ID: 19425542
    [TBL] [Abstract][Full Text] [Related]  

  • 37. Exciton and biexciton fine structure in single elongated islands grown on a vicinal surface.
    Besombes L; Kheng K; Martrou D
    Phys Rev Lett; 2000 Jul; 85(2):425-8. PubMed ID: 10991299
    [TBL] [Abstract][Full Text] [Related]  

  • 38. Lattice distortion inducing exciton splitting and coherent quantum beating in CsPbI
    Han Y; Liang W; Lin X; Li Y; Sun F; Zhang F; Sercel PC; Wu K
    Nat Mater; 2022 Nov; 21(11):1282-1289. PubMed ID: 36075966
    [TBL] [Abstract][Full Text] [Related]  

  • 39. Numerical simulation of electronic properties of coupled quantum dots on wetting layers.
    Betcke MM; Voss H
    Nanotechnology; 2008 Apr; 19(16):165204. PubMed ID: 21825638
    [TBL] [Abstract][Full Text] [Related]  

  • 40. Glancing-angle diffraction anomalous fine structure of InAs quantum dots and quantum wires.
    Grenier S; Proietti MG; Renevier H; Gonzalez L; García JM; Gérard JM; García J
    J Synchrotron Radiat; 2001 Mar; 8(Pt 2):536-8. PubMed ID: 11512842
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 9.