These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

180 related articles for article (PubMed ID: 25372411)

  • 21. Influence of electron irradiation on the electronic transport mechanisms during the conductive AFM imaging of InAs/GaAs quantum dots capped with a thin GaAs layer.
    Troyon M; Smaali K
    Nanotechnology; 2008 Jun; 19(25):255709. PubMed ID: 21828669
    [TBL] [Abstract][Full Text] [Related]  

  • 22. Interface Fermi level pinning at contacts between PEDOT: PSS and molecular organic semiconductors.
    Peisert H; Petr A; Dunsch L; Chassé T; Knupfer M
    Chemphyschem; 2007 Feb; 8(3):386-90. PubMed ID: 17230589
    [TBL] [Abstract][Full Text] [Related]  

  • 23. Absence of Fermi-level pinning at cleaved nonpolar InN surfaces.
    Wu CL; Lee HM; Kuo CT; Chen CH; Gwo S
    Phys Rev Lett; 2008 Sep; 101(10):106803. PubMed ID: 18851242
    [TBL] [Abstract][Full Text] [Related]  

  • 24. Electrochemical pinning of the Fermi level: mediation of photoluminescence from gallium nitride and zinc oxide.
    Chakrapani V; Pendyala C; Kash K; Anderson AB; Sunkara MK; Angus JC
    J Am Chem Soc; 2008 Oct; 130(39):12944-52. PubMed ID: 18771263
    [TBL] [Abstract][Full Text] [Related]  

  • 25. Affinity of the interface between hydroxyapatite (0001) and titanium (0001) surfaces: a first-principles investigation.
    Sun JP; Dai J; Song Y; Wang Y; Yang R
    ACS Appl Mater Interfaces; 2014 Dec; 6(23):20738-51. PubMed ID: 25390283
    [TBL] [Abstract][Full Text] [Related]  

  • 26. First-principles study of the electronic structures and dielectric properties of the Si/SiO(2) interface.
    Ono T; Egami Y; Kutsuki K; Watanabe H; Hirose K
    J Phys Condens Matter; 2007 Sep; 19(36):365202. PubMed ID: 21694148
    [TBL] [Abstract][Full Text] [Related]  

  • 27. Combined spectroscopic characterization of electron transfer at hybrid CuPcF(16)/GaAs semiconductor interfaces.
    Cabanillas-Gonzalez J; Egelhaaf HJ; Brambilla A; Sessi P; Duò L; Finazzi M; Ciccacci F; Lanzani G
    Nanotechnology; 2008 Oct; 19(42):424010. PubMed ID: 21832670
    [TBL] [Abstract][Full Text] [Related]  

  • 28. Quantum electron transport through ultrathin Si films: effects of interface passivation on Fermi-level pinning.
    Gohda Y; Watanabe S; Gross A
    Phys Rev Lett; 2008 Oct; 101(16):166801. PubMed ID: 18999698
    [TBL] [Abstract][Full Text] [Related]  

  • 29. Wet chemical functionalization of III-V semiconductor surfaces: alkylation of gallium arsenide and gallium nitride by a Grignard reaction sequence.
    Peczonczyk SL; Mukherjee J; Carim AI; Maldonado S
    Langmuir; 2012 Mar; 28(10):4672-82. PubMed ID: 22372474
    [TBL] [Abstract][Full Text] [Related]  

  • 30. Atom-to-atom interactions for atomic layer deposition of trimethylaluminum on Ga-rich GaAs(001)-4 × 6 and As-rich GaAs(001)-2 × 4 surfaces: a synchrotron radiation photoemission study.
    Pi TW; Lin HY; Liu YT; Lin TD; Wertheim GK; Kwo J; Hong M
    Nanoscale Res Lett; 2013 Apr; 8(1):169. PubMed ID: 23587341
    [TBL] [Abstract][Full Text] [Related]  

  • 31. Half metallic ferromagnets.
    Dowben P
    J Phys Condens Matter; 2007 Aug; 19(31):310301. PubMed ID: 21694101
    [TBL] [Abstract][Full Text] [Related]  

  • 32. Hydrogen defect-level pinning in semiconductors: the muonium equivalent.
    Lichti RL; Chow KH; Cox SF
    Phys Rev Lett; 2008 Sep; 101(13):136403. PubMed ID: 18851469
    [TBL] [Abstract][Full Text] [Related]  

  • 33. The impact of the Fermi-Dirac distribution on charge injection at metal/organic interfaces.
    Wang ZB; Helander MG; Greiner MT; Lu ZH
    J Chem Phys; 2010 May; 132(17):174708. PubMed ID: 20459184
    [TBL] [Abstract][Full Text] [Related]  

  • 34. Fermi-level pinning at the Sb/GaAs(110) surface studied by scanning tunneling spectroscopy.
    Feenstra RM; Mårtensson P
    Phys Rev Lett; 1988 Jul; 61(4):447-450. PubMed ID: 10039335
    [No Abstract]   [Full Text] [Related]  

  • 35. Crystallography of In on GaAs(110): Possible relationship of laterally inhomogeneous structure of Fermi-level pinning.
    Savage DE; Lagally MG
    Phys Rev Lett; 1985 Aug; 55(9):959-962. PubMed ID: 10032493
    [No Abstract]   [Full Text] [Related]  

  • 36. Electron transport through rectifying self-assembled monolayer diodes on silicon: Fermi-level pinning at the molecule-metal interface.
    Lenfant S; Guerin D; Tran Van F; Chevrot C; Palacin S; Bourgoin JP; Bouloussa O; Rondelez F; Vuillaume D
    J Phys Chem B; 2006 Jul; 110(28):13947-58. PubMed ID: 16836346
    [TBL] [Abstract][Full Text] [Related]  

  • 37. Tunable electronic interfaces between bulk semiconductors and ligand-stabilized nanoparticle assemblies.
    Boettcher SW; Strandwitz NC; Schierhorn M; Lock N; Lonergan MC; Stucky GD
    Nat Mater; 2007 Aug; 6(8):592-6. PubMed ID: 17589515
    [TBL] [Abstract][Full Text] [Related]  

  • 38. The interface energetics of self-assembled monolayers on metals.
    Heimel G; Romaner L; Zojer E; Bredas JL
    Acc Chem Res; 2008 Jun; 41(6):721-9. PubMed ID: 18507404
    [TBL] [Abstract][Full Text] [Related]  

  • 39. Infrared spectra at surfaces and interfaces from first principles: evolution of the spectra across the Si(100)-SiO2 interface.
    Giustino F; Pasquarello A
    Phys Rev Lett; 2005 Oct; 95(18):187402. PubMed ID: 16383945
    [TBL] [Abstract][Full Text] [Related]  

  • 40. Comparison of vacancy and antisite defects in GaAs and InGaAs through hybrid functionals.
    Komsa HP; Pasquarello A
    J Phys Condens Matter; 2012 Feb; 24(4):045801. PubMed ID: 22214854
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 9.