243 related articles for article (PubMed ID: 25398100)
1. Modulation of surface trap induced resistive switching by electrode annealing in individual PbS micro/nanowire-based devices for resistance random access memory.
Zheng J; Cheng B; Wu F; Su X; Xiao Y; Guo R; Lei S
ACS Appl Mater Interfaces; 2014 Dec; 6(23):20812-8. PubMed ID: 25398100
[TBL] [Abstract][Full Text] [Related]
2. Reversible Negative Resistive Switching in an Individual Fe@Al
Ye Y; Zhao J; Xiao L; Cheng B; Xiao Y; Lei S
ACS Appl Mater Interfaces; 2018 Jun; 10(22):19002-19009. PubMed ID: 29747500
[TBL] [Abstract][Full Text] [Related]
3. Individual Zn2SnO4-sheathed ZnO heterostructure nanowires for efficient resistive switching memory controlled by interface states.
Cheng B; Ouyang Z; Chen C; Xiao Y; Lei S
Sci Rep; 2013 Nov; 3():3249. PubMed ID: 24247976
[TBL] [Abstract][Full Text] [Related]
4. Tunable hysteresis behaviour related to trap filling dependence of surface barrier in an individual CH
Hong Z; Zhao J; Li S; Cheng B; Xiao Y; Lei S
Nanoscale; 2019 Feb; 11(7):3360-3369. PubMed ID: 30724937
[TBL] [Abstract][Full Text] [Related]
5. Presetting conductive pathway induced the switching uniformity evolution of a-SiN
Sun Y; Ma Z; Jiang X; Tan D; Zhang H; Zhang X; Liu J; Yang H; Li W; Xu L; Chen K; Feng D
Nanotechnology; 2018 Oct; 29(41):415701. PubMed ID: 30004387
[TBL] [Abstract][Full Text] [Related]
6. Temperature dependence of resistive switching behaviors in resistive random access memory based on graphene oxide film.
Yi M; Cao Y; Ling H; Du Z; Wang L; Yang T; Fan Q; Xie L; Huang W
Nanotechnology; 2014 May; 25(18):185202. PubMed ID: 24739543
[TBL] [Abstract][Full Text] [Related]
7. Variability Improvement of TiO
Banerjee W; Xu X; Lv H; Liu Q; Long S; Liu M
ACS Omega; 2017 Oct; 2(10):6888-6895. PubMed ID: 31457275
[TBL] [Abstract][Full Text] [Related]
8. PMMA interlayer-modulated memory effects by space charge polarization in resistive switching based on CuSCN-nanopyramids/ZnO-nanorods p-n heterojunction.
Cheng B; Zhao J; Xiao L; Cai Q; Guo R; Xiao Y; Lei S
Sci Rep; 2015 Dec; 5():17859. PubMed ID: 26648249
[TBL] [Abstract][Full Text] [Related]
9. Activation Energy and Bipolar Switching Properties for the Co-Sputtering of ITO
Chen KH; Cheng CM; Wang NF; Kao MC
Nanomaterials (Basel); 2023 Jul; 13(15):. PubMed ID: 37570498
[TBL] [Abstract][Full Text] [Related]
10. Vacancy associates-rich ultrathin nanosheets for high performance and flexible nonvolatile memory device.
Liang L; Li K; Xiao C; Fan S; Liu J; Zhang W; Xu W; Tong W; Liao J; Zhou Y; Ye B; Xie Y
J Am Chem Soc; 2015 Mar; 137(8):3102-8. PubMed ID: 25668153
[TBL] [Abstract][Full Text] [Related]
11. Enhanced Giant Piezoresistance Performance of Sandwiched ZnS/Si/SiO
Cheng B; Xiong L; Cai Q; Shi H; Zhao J; Su X; Xiao Y; Lei S
ACS Appl Mater Interfaces; 2016 Dec; 8(50):34648-34658. PubMed ID: 27936548
[TBL] [Abstract][Full Text] [Related]
12. Random telegraph noise and resistance switching analysis of oxide based resistive memory.
Choi S; Yang Y; Lu W
Nanoscale; 2014 Jan; 6(1):400-4. PubMed ID: 24202235
[TBL] [Abstract][Full Text] [Related]
13. Volatile Memristive Devices with Analog Resistance Switching Based on Self-Assembled Squaraine Microtubes as Synaptic Emulators.
Griffin K; Redmond G
ACS Appl Mater Interfaces; 2024 Jan; 16(2):2539-2553. PubMed ID: 38174356
[TBL] [Abstract][Full Text] [Related]
14. Analysis of the Bipolar Resistive Switching Behavior of a Biocompatible Glucose Film for Resistive Random Access Memory.
Park SP; Tak YJ; Kim HJ; Lee JH; Yoo H; Kim HJ
Adv Mater; 2018 Jun; 30(26):e1800722. PubMed ID: 29761552
[TBL] [Abstract][Full Text] [Related]
15. Solution-processed black phosphorus nanoflakes for integrating nonvolatile resistive random access memory and the mechanism unveiled.
Hsieh YL; Su WH; Huang CC; Su CY
Nanotechnology; 2019 Nov; 30(44):445702. PubMed ID: 31349243
[TBL] [Abstract][Full Text] [Related]
16. Illumination Effect on Bipolar Switching Properties of Gd:SiO2 RRAM Devices Using Transparent Indium Tin Oxide Electrode.
Chen KH; Chang KC; Chang TC; Tsai TM; Liang SP; Young TF; Syu YE; Sze SM
Nanoscale Res Lett; 2016 Dec; 11(1):224. PubMed ID: 27117634
[TBL] [Abstract][Full Text] [Related]
17. Effect of Annealing Temperature for Ni/AlO
Shen Z; Qi Y; Mitrovic IZ; Zhao C; Hall S; Yang L; Luo T; Huang Y; Zhao C
Micromachines (Basel); 2019 Jul; 10(7):. PubMed ID: 31269730
[TBL] [Abstract][Full Text] [Related]
18. Improvement of Bipolar Switching Properties of Gd:SiOx RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO2 Treatment.
Chen KH; Chang KC; Chang TC; Tsai TM; Liang SP; Young TF; Syu YE; Sze SM
Nanoscale Res Lett; 2016 Dec; 11(1):52. PubMed ID: 26831690
[TBL] [Abstract][Full Text] [Related]
19. Tunneling of photon-generated carrier in the interface barrier induced resistive switching memory behaviour.
Sun B; Guo T; Zhou G; Ranjan S; Hou W; Hou Y; Zhao Y
J Colloid Interface Sci; 2019 Oct; 553():682-687. PubMed ID: 31252184
[TBL] [Abstract][Full Text] [Related]
20. Bias-Controlled Tunable Electronic Transport with Memory Characteristics in an Individual ZnO Nanowire for Realization of a Self-Driven UV Photodetector with Two Symmetrical Electrodes.
Wang S; Zhao J; Tong T; Cheng B; Xiao Y; Lei S
ACS Appl Mater Interfaces; 2019 Apr; 11(16):14932-14943. PubMed ID: 30920194
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]