195 related articles for article (PubMed ID: 25437259)
1. Isolated electron spins in silicon carbide with millisecond coherence times.
Christle DJ; Falk AL; Andrich P; Klimov PV; Hassan JU; Son NT; Janzén E; Ohshima T; Awschalom DD
Nat Mater; 2015 Feb; 14(2):160-3. PubMed ID: 25437259
[TBL] [Abstract][Full Text] [Related]
2. Quantum decoherence dynamics of divacancy spins in silicon carbide.
Seo H; Falk AL; Klimov PV; Miao KC; Galli G; Awschalom DD
Nat Commun; 2016 Sep; 7():12935. PubMed ID: 27679936
[TBL] [Abstract][Full Text] [Related]
3. All-optical coherent population trapping with defect spin ensembles in silicon carbide.
Zwier OV; O'Shea D; Onur AR; van der Wal CH
Sci Rep; 2015 Jun; 5():10931. PubMed ID: 26047132
[TBL] [Abstract][Full Text] [Related]
4. Room temperature coherent control of defect spin qubits in silicon carbide.
Koehl WF; Buckley BB; Heremans FJ; Calusine G; Awschalom DD
Nature; 2011 Nov; 479(7371):84-7. PubMed ID: 22051676
[TBL] [Abstract][Full Text] [Related]
5. Coherent Control and Magnetic Detection of Divacancy Spins in Silicon Carbide at High Pressures.
Liu L; Wang JF; Liu XD; Xu HA; Cui JM; Li Q; Zhou JY; Lin WX; He ZX; Xu W; Wei Y; Liu ZH; Wang P; Hao ZH; Ding JF; Li HO; Liu W; Li H; You L; Xu JS; Gregoryanz E; Li CF; Guo GC
Nano Lett; 2022 Dec; 22(24):9943-9950. PubMed ID: 36507869
[TBL] [Abstract][Full Text] [Related]
6. Coherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditions.
Niethammer M; Widmann M; Rendler T; Morioka N; Chen YC; Stöhr R; Hassan JU; Onoda S; Ohshima T; Lee SY; Mukherjee A; Isoya J; Son NT; Wrachtrup J
Nat Commun; 2019 Dec; 10(1):5569. PubMed ID: 31804489
[TBL] [Abstract][Full Text] [Related]
7. Optical charge state control of spin defects in 4H-SiC.
Wolfowicz G; Anderson CP; Yeats AL; Whiteley SJ; Niklas J; Poluektov OG; Heremans FJ; Awschalom DD
Nat Commun; 2017 Nov; 8(1):1876. PubMed ID: 29192288
[TBL] [Abstract][Full Text] [Related]
8. Coherent control of single spins in silicon carbide at room temperature.
Widmann M; Lee SY; Rendler T; Son NT; Fedder H; Paik S; Yang LP; Zhao N; Yang S; Booker I; Denisenko A; Jamali M; Momenzadeh SA; Gerhardt I; Ohshima T; Gali A; Janzén E; Wrachtrup J
Nat Mater; 2015 Feb; 14(2):164-8. PubMed ID: 25437256
[TBL] [Abstract][Full Text] [Related]
9. Room-temperature coherent manipulation of single-spin qubits in silicon carbide with a high readout contrast.
Li Q; Wang JF; Yan FF; Zhou JY; Wang HF; Liu H; Guo LP; Zhou X; Gali A; Liu ZH; Wang ZQ; Sun K; Guo GP; Tang JS; Li H; You LX; Xu JS; Li CF; Guo GC
Natl Sci Rev; 2022 May; 9(5):nwab122. PubMed ID: 35668749
[TBL] [Abstract][Full Text] [Related]
10. Hybrid optical-electrical detection of donor electron spins with bound excitons in silicon.
Lo CC; Urdampilleta M; Ross P; Gonzalez-Zalba MF; Mansir J; Lyon SA; Thewalt ML; Morton JJ
Nat Mater; 2015 May; 14(5):490-4. PubMed ID: 25799326
[TBL] [Abstract][Full Text] [Related]
11. High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide.
Nagy R; Niethammer M; Widmann M; Chen YC; Udvarhelyi P; Bonato C; Hassan JU; Karhu R; Ivanov IG; Son NT; Maze JR; Ohshima T; Soykal ÖO; Gali Á; Lee SY; Kaiser F; Wrachtrup J
Nat Commun; 2019 Apr; 10(1):1954. PubMed ID: 31028260
[TBL] [Abstract][Full Text] [Related]
12. All-Electrical Readout of Coherently Controlled Spins in Silicon Carbide.
Lew CT; Sewani VK; Iwamoto N; Ohshima T; McCallum JC; Johnson BC
Phys Rev Lett; 2024 Apr; 132(14):146902. PubMed ID: 38640398
[TBL] [Abstract][Full Text] [Related]
13. Entanglement and control of single nuclear spins in isotopically engineered silicon carbide.
Bourassa A; Anderson CP; Miao KC; Onizhuk M; Ma H; Crook AL; Abe H; Ul-Hassan J; Ohshima T; Son NT; Galli G; Awschalom DD
Nat Mater; 2020 Dec; 19(12):1319-1325. PubMed ID: 32958880
[TBL] [Abstract][Full Text] [Related]
14. Polytype control of spin qubits in silicon carbide.
Falk AL; Buckley BB; Calusine G; Koehl WF; Dobrovitski VV; Politi A; Zorman CA; Feng PX; Awschalom DD
Nat Commun; 2013; 4():1819. PubMed ID: 23652007
[TBL] [Abstract][Full Text] [Related]
15. Purcell Enhancement of a Single Silicon Carbide Color Center with Coherent Spin Control.
Crook AL; Anderson CP; Miao KC; Bourassa A; Lee H; Bayliss SL; Bracher DO; Zhang X; Abe H; Ohshima T; Hu EL; Awschalom DD
Nano Lett; 2020 May; 20(5):3427-3434. PubMed ID: 32208710
[TBL] [Abstract][Full Text] [Related]
16. Coherent long-distance displacement of individual electron spins.
Flentje H; Mortemousque PA; Thalineau R; Ludwig A; Wieck AD; Bäuerle C; Meunier T
Nat Commun; 2017 Sep; 8(1):501. PubMed ID: 28894092
[TBL] [Abstract][Full Text] [Related]
17. Magnetic-field-dependent spin properties of divacancy defects in silicon carbide.
Yan FF; Wang JF; He ZX; Li Q; Lin WX; Zhou JY; Xu JS; Li CF; Guo GC
Nanoscale; 2023 Mar; 15(11):5300-5304. PubMed ID: 36810581
[TBL] [Abstract][Full Text] [Related]
18. Three-Dimensional Proton Beam Writing of Optically Active Coherent Vacancy Spins in Silicon Carbide.
Kraus H; Simin D; Kasper C; Suda Y; Kawabata S; Kada W; Honda T; Hijikata Y; Ohshima T; Dyakonov V; Astakhov GV
Nano Lett; 2017 May; 17(5):2865-2870. PubMed ID: 28350468
[TBL] [Abstract][Full Text] [Related]
19. Electrical and optical control of single spins integrated in scalable semiconductor devices.
Anderson CP; Bourassa A; Miao KC; Wolfowicz G; Mintun PJ; Crook AL; Abe H; Ul Hassan J; Son NT; Ohshima T; Awschalom DD
Science; 2019 Dec; 366(6470):1225-1230. PubMed ID: 31806809
[TBL] [Abstract][Full Text] [Related]
20. Electrically and mechanically tunable electron spins in silicon carbide color centers.
Falk AL; Klimov PV; Buckley BB; Ivády V; Abrikosov IA; Calusine G; Koehl WF; Gali A; Awschalom DD
Phys Rev Lett; 2014 May; 112(18):187601. PubMed ID: 24856721
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]