These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

671 related articles for article (PubMed ID: 25471009)

  • 1. Modulating the interface quality and electrical properties of HfTiO/InGaAs gate stack by atomic-layer-deposition-derived Al₂O₃ passivation layer.
    He G; Gao J; Chen H; Cui J; Sun Z; Chen X
    ACS Appl Mater Interfaces; 2014 Dec; 6(24):22013-25. PubMed ID: 25471009
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Interface Optimization and Performance Enhancement of Er
    Wu Q; Yu Q; He G; Wang W; Lu J; Yao B; Liu S; Fang Z
    Nanomaterials (Basel); 2023 May; 13(11):. PubMed ID: 37299643
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Temperature Dependent Border Trap Response Produced by a Defective Interfacial Oxide Layer in Al
    Tang K; Meng AC; Droopad R; McIntyre PC
    ACS Appl Mater Interfaces; 2016 Nov; 8(44):30601-30607. PubMed ID: 27758108
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Interface Chemistry and Dielectric Optimization of TMA-Passivated high-
    Wang D; He G; Hao L; Qiao L; Fang Z; Liu J
    ACS Appl Mater Interfaces; 2020 Jun; 12(22):25390-25399. PubMed ID: 32383855
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Interface Optimization and Transport Modulation of Sm
    Lu J; He G; Yan J; Dai Z; Zheng G; Jiang S; Qiao L; Gao Q; Fang Z
    Nanomaterials (Basel); 2021 Dec; 11(12):. PubMed ID: 34947792
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Effects of Titanium Layer Oxygen Scavenging on the High-k/InGaAs Interface.
    Winter R; Shekhter P; Tang K; Floreano L; Verdini A; McIntyre PC; Eizenberg M
    ACS Appl Mater Interfaces; 2016 Jul; 8(26):16979-84. PubMed ID: 27282201
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Interface properties of atomic layer deposited TiO2/Al2O3 films on In(0.53)Ga(0.47)As/InP substrates.
    Mukherjee C; Das T; Mahata C; Maiti CK; Chia CK; Chiam SY; Chi DZ; Dalapati GK
    ACS Appl Mater Interfaces; 2014 Mar; 6(5):3263-74. PubMed ID: 24472090
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Modulating the Interface Chemistry and Electrical Properties of Sputtering-Driven HfYO/GaAs Gate Stacks by ALD Pulse Cycles and Thermal Treatment.
    Liang S; He G; Wang D; Hao L; Zhang M; Cui J
    ACS Omega; 2019 Jul; 4(7):11663-11672. PubMed ID: 31460273
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Silicon diffusion control in atomic-layer-deposited Al2O3/La2O3/Al2O3 gate stacks using an Al2O3 barrier layer.
    Wang X; Liu HX; Fei CX; Yin SY; Fan XJ
    Nanoscale Res Lett; 2015; 10():141. PubMed ID: 25897303
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Surface passivation and interface properties of bulk GaAs and epitaxial-GaAs/Ge using atomic layer deposited TiAlO alloy dielectric.
    Dalapati GK; Chia CK; Tan CC; Tan HR; Chiam SY; Dong JR; Das A; Chattopadhyay S; Mahata C; Maiti CK; Chi DZ
    ACS Appl Mater Interfaces; 2013 Feb; 5(3):949-57. PubMed ID: 23331503
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Electrical properties and thermal stability in stack structure of HfO
    Baik M; Kang HK; Kang YS; Jeong KS; An Y; Choi S; Kim H; Song JD; Cho MH
    Sci Rep; 2017 Sep; 7(1):11337. PubMed ID: 28900097
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Interface chemistry and leakage current mechanism of HfGdON/Ge gate stack modulated by ALD-driven interlayer.
    He G; Wang D; Ma R; Liu M; Cui J
    RSC Adv; 2019 Oct; 9(58):33800-33805. PubMed ID: 35528882
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Probing the Dielectric Properties of Ultrathin Al/Al
    Acharya J; Wilt J; Liu B; Wu J
    ACS Appl Mater Interfaces; 2018 Jan; 10(3):3112-3120. PubMed ID: 29293311
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Selective Passivation of GeO2/Ge Interface Defects in Atomic Layer Deposited High-k MOS Structures.
    Zhang L; Li H; Guo Y; Tang K; Woicik J; Robertson J; McIntyre PC
    ACS Appl Mater Interfaces; 2015 Sep; 7(37):20499-506. PubMed ID: 26334784
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Tailoring the interface quality between HfO2 and GaAs via in situ ZnO passivation using atomic layer deposition.
    Byun YC; Choi S; An Y; McIntyre PC; Kim H
    ACS Appl Mater Interfaces; 2014 Jul; 6(13):10482-8. PubMed ID: 24911531
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Effect of Al
    Acharya J; Goul R; Romine D; Sakidja R; Wu J
    ACS Appl Mater Interfaces; 2019 Aug; 11(33):30368-30375. PubMed ID: 31356739
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Interface Defect Hydrogen Depassivation and Capacitance-Voltage Hysteresis of Al
    Tang K; Palumbo FR; Zhang L; Droopad R; McIntyre PC
    ACS Appl Mater Interfaces; 2017 Mar; 9(8):7819-7825. PubMed ID: 28152310
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks.
    Xiang Y; Zhou C; Jia E; Wang W
    Nanoscale Res Lett; 2015; 10():137. PubMed ID: 25852428
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Platinum-Enhanced Electron Transfer and Surface Passivation through Ultrathin Film Aluminum Oxide (Al₂O₃) on Si(111)-CH₃ Photoelectrodes.
    Kim HJ; Kearney KL; Le LH; Pekarek RT; Rose MJ
    ACS Appl Mater Interfaces; 2015 Apr; 7(16):8572-84. PubMed ID: 25880534
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Interface Trap Density Reduction for Al2O3/GaN (0001) Interfaces by Oxidizing Surface Preparation prior to Atomic Layer Deposition.
    Zhernokletov DM; Negara MA; Long RD; Aloni S; Nordlund D; McIntyre PC
    ACS Appl Mater Interfaces; 2015 Jun; 7(23):12774-80. PubMed ID: 25988586
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 34.