251 related articles for article (PubMed ID: 25490965)
1. Indium oxide thin-film transistors processed at low temperature via ultrasonic spray pyrolysis.
Faber H; Lin YH; Thomas SR; Zhao K; Pliatsikas N; McLachlan MA; Amassian A; Patsalas PA; Anthopoulos TD
ACS Appl Mater Interfaces; 2015 Jan; 7(1):782-90. PubMed ID: 25490965
[TBL] [Abstract][Full Text] [Related]
2. Pulsed direct flame deposition and thermal annealing of transparent amorphous indium zinc oxide films as active layers in field effect transistors.
Kilian D; Polster S; Vogeler I; Jank MP; Frey L; Peukert W
ACS Appl Mater Interfaces; 2014 Aug; 6(15):12245-51. PubMed ID: 25029269
[TBL] [Abstract][Full Text] [Related]
3. Boron-doped peroxo-zirconium oxide dielectric for high-performance, low-temperature, solution-processed indium oxide thin-film transistor.
Park JH; Yoo YB; Lee KH; Jang WS; Oh JY; Chae SS; Lee HW; Han SW; Baik HK
ACS Appl Mater Interfaces; 2013 Aug; 5(16):8067-75. PubMed ID: 23883390
[TBL] [Abstract][Full Text] [Related]
4. Synergistic approach to high-performance oxide thin film transistors using a bilayer channel architecture.
Yu X; Zhou N; Smith J; Lin H; Stallings K; Yu J; Marks TJ; Facchetti A
ACS Appl Mater Interfaces; 2013 Aug; 5(16):7983-8. PubMed ID: 23876148
[TBL] [Abstract][Full Text] [Related]
5. Fully solution-processed low-voltage aqueous In2O3 thin-film transistors using an ultrathin ZrO(x) dielectric.
Liu A; Liu GX; Zhu HH; Xu F; Fortunato E; Martins R; Shan FK
ACS Appl Mater Interfaces; 2014 Oct; 6(20):17364-9. PubMed ID: 25285983
[TBL] [Abstract][Full Text] [Related]
6. Exploratory combustion synthesis: amorphous indium yttrium oxide for thin-film transistors.
Hennek JW; Kim MG; Kanatzidis MG; Facchetti A; Marks TJ
J Am Chem Soc; 2012 Jun; 134(23):9593-6. PubMed ID: 22625409
[TBL] [Abstract][Full Text] [Related]
7. ZnO-based thin film transistors employing aluminum titanate gate dielectrics deposited by spray pyrolysis at ambient air.
Afouxenidis D; Mazzocco R; Vourlias G; Livesley PJ; Krier A; Milne WI; Kolosov O; Adamopoulos G
ACS Appl Mater Interfaces; 2015 Apr; 7(13):7334-41. PubMed ID: 25774574
[TBL] [Abstract][Full Text] [Related]
8. Control and characterization of the structural, electrical, and optical properties of amorphous zinc-indium-tin oxide thin films.
Buchholz DB; Liu J; Marks TJ; Zhang M; Chang RP
ACS Appl Mater Interfaces; 2009 Oct; 1(10):2147-53. PubMed ID: 20355848
[TBL] [Abstract][Full Text] [Related]
9. Lanthanum aluminum oxide thin-film dielectrics from aqueous solution.
Plassmeyer PN; Archila K; Wager JF; Page CJ
ACS Appl Mater Interfaces; 2015 Jan; 7(3):1678-84. PubMed ID: 25532438
[TBL] [Abstract][Full Text] [Related]
10. Low-temperature, high-performance, solution-processed indium oxide thin-film transistors.
Han SY; Herman GS; Chang CH
J Am Chem Soc; 2011 Apr; 133(14):5166-9. PubMed ID: 21417268
[TBL] [Abstract][Full Text] [Related]
11. Spectroscopic analysis, structural, microstructural, optical and electrical properties of Zn-doped In2O3 thin films.
Jothibas M; Manoharan C; Ramalingam S; Dhanapandian S; Bououdina M
Spectrochim Acta A Mol Biomol Spectrosc; 2014 Mar; 122():171-8. PubMed ID: 24309179
[TBL] [Abstract][Full Text] [Related]
12. Tailoring indium oxide nanocrystal synthesis conditions for air-stable high-performance solution-processed thin-film transistors.
Swisher SL; Volkman SK; Subramanian V
ACS Appl Mater Interfaces; 2015 May; 7(19):10069-75. PubMed ID: 25915094
[TBL] [Abstract][Full Text] [Related]
13. Low-temperature, solution-processed ZrO2:B thin film: a bifunctional inorganic/organic interfacial glue for flexible thin-film transistors.
Park JH; Oh JY; Han SW; Lee TI; Baik HK
ACS Appl Mater Interfaces; 2015 Mar; 7(8):4494-503. PubMed ID: 25664940
[TBL] [Abstract][Full Text] [Related]
14. Facile and environmentally friendly solution-processed aluminum oxide dielectric for low-temperature, high-performance oxide thin-film transistors.
Xu W; Wang H; Xie F; Chen J; Cao H; Xu JB
ACS Appl Mater Interfaces; 2015 Mar; 7(10):5803-10. PubMed ID: 25679286
[TBL] [Abstract][Full Text] [Related]
15. Low-temperature solution-processed amorphous indium tin oxide field-effect transistors.
Kim HS; Kim MG; Ha YG; Kanatzidis MG; Marks TJ; Facchetti A
J Am Chem Soc; 2009 Aug; 131(31):10826-7. PubMed ID: 19603806
[TBL] [Abstract][Full Text] [Related]
16. Morphological impact of zinc oxide layers on the device performance in thin-film transistors.
Faber H; Klaumünzer M; Voigt M; Galli D; Vieweg BF; Peukert W; Spiecker E; Halik M
Nanoscale; 2011 Mar; 3(3):897-9. PubMed ID: 21116548
[TBL] [Abstract][Full Text] [Related]
17. Effects of solution temperature on solution-processed high-performance metal oxide thin-film transistors.
Lee KH; Park JH; Yoo YB; Jang WS; Oh JY; Chae SS; Moon KJ; Myoung JM; Baik HK
ACS Appl Mater Interfaces; 2013 Apr; 5(7):2585-92. PubMed ID: 23461268
[TBL] [Abstract][Full Text] [Related]
18. Aqueous inorganic inks for low-temperature fabrication of ZnO TFTs.
Meyers ST; Anderson JT; Hung CM; Thompson J; Wager JF; Keszler DA
J Am Chem Soc; 2008 Dec; 130(51):17603-9. PubMed ID: 19053193
[TBL] [Abstract][Full Text] [Related]
19. Magnesium indium oxide (MgIn2O4) spinel thin films: chemical spray pyrolysis (CSP) growth and materials characterizations.
Ezhil Raj AM; Selvan G; Ravidhas C; Jayachandran M; Sanjeeviraja C
J Colloid Interface Sci; 2008 Dec; 328(2):396-401. PubMed ID: 18848331
[TBL] [Abstract][Full Text] [Related]
20. High-performance solution-processed amorphous zinc-indium-tin oxide thin-film transistors.
Kim MG; Kim HS; Ha YG; He J; Kanatzidis MG; Facchetti A; Marks TJ
J Am Chem Soc; 2010 Aug; 132(30):10352-64. PubMed ID: 20662515
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
