635 related articles for article (PubMed ID: 25494474)
21. Atomic Layer Deposition of Layered Boron Nitride for Large-Area 2D Electronics.
Lee J; Ravichandran AV; Mohan J; Cheng L; Lucero AT; Zhu H; Che Z; Catalano M; Kim MJ; Wallace RM; Venugopal A; Choi W; Colombo L; Kim J
ACS Appl Mater Interfaces; 2020 Aug; 12(32):36688-36694. PubMed ID: 32667778
[TBL] [Abstract][Full Text] [Related]
22. Low-Temperature As-Grown Crystalline β-Ga
Ilhom S; Mohammad A; Shukla D; Grasso J; Willis BG; Okyay AK; Biyikli N
ACS Appl Mater Interfaces; 2021 Feb; 13(7):8538-8551. PubMed ID: 33566585
[TBL] [Abstract][Full Text] [Related]
23. Low temperature growth of gallium oxide thin films via plasma enhanced atomic layer deposition.
O'Donoghue R; Rechmann J; Aghaee M; Rogalla D; Becker HW; Creatore M; Wieck AD; Devi A
Dalton Trans; 2017 Dec; 46(47):16551-16561. PubMed ID: 29160880
[TBL] [Abstract][Full Text] [Related]
24. Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma.
Knoops HC; Braeken EM; de Peuter K; Potts SE; Haukka S; Pore V; Kessels WM
ACS Appl Mater Interfaces; 2015 Sep; 7(35):19857-62. PubMed ID: 26305370
[TBL] [Abstract][Full Text] [Related]
25. Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers.
Andringa AM; Perrotta A; de Peuter K; Knoops HC; Kessels WM; Creatore M
ACS Appl Mater Interfaces; 2015 Oct; 7(40):22525-32. PubMed ID: 26393381
[TBL] [Abstract][Full Text] [Related]
26. Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures.
Wang W; Yang W; Lin Y; Zhou S; Li G
Sci Rep; 2015 Nov; 5():16453. PubMed ID: 26563573
[TBL] [Abstract][Full Text] [Related]
27. Nitrogen-doped ZnO thin films grown on glass substrates by atomic layer deposition using NH3 as a doping source.
Lee DH; Kim HS; Noh SJ
J Nanosci Nanotechnol; 2011 Jan; 11(1):391-5. PubMed ID: 21446462
[TBL] [Abstract][Full Text] [Related]
28. Preferential growth of ZnO thin films by the atomic layer deposition technique.
Pung SY; Choy KL; Hou X; Shan C
Nanotechnology; 2008 Oct; 19(43):435609. PubMed ID: 21832704
[TBL] [Abstract][Full Text] [Related]
29. Characterization of nitride thin films by electron backscatter diffraction.
Trager-Cowan C; Sweeney F; Hastie J; Manson-Smith SK; Cowan DA; McColl D; Mohammed A; O'Donnell KP; Zubia D; Hersee SD; Foxon CT; Harrison I; Novikov SV
J Microsc; 2002 Mar; 205(Pt 3):226-30. PubMed ID: 11996185
[TBL] [Abstract][Full Text] [Related]
30. Differences in the nanoscale electrical properties of GaN films grown on sapphire and ZnO substrates by molecular beam epitaxy.
Chen SH; Su CW; Chang LH; Tsai TH
Microsc Res Tech; 2017 Jul; 80(7):731-736. PubMed ID: 28248446
[TBL] [Abstract][Full Text] [Related]
31. Magnetic Properties of CoFe
Pham CD; Chang J; Zurbuchen MA; Chang JP
ACS Appl Mater Interfaces; 2017 Oct; 9(42):36980-36988. PubMed ID: 28925262
[TBL] [Abstract][Full Text] [Related]
32. Low Temperature, Selective Atomic Layer Deposition of Nickel Metal Thin Films.
Kerrigan MM; Klesko JP; Blakeney KJ; Winter CH
ACS Appl Mater Interfaces; 2018 Apr; 10(16):14200-14208. PubMed ID: 29630338
[TBL] [Abstract][Full Text] [Related]
33. Low Thermal Budget Heteroepitaxial Gallium Oxide Thin Films Enabled by Atomic Layer Deposition.
Rafie Borujeny E; Sendetskyi O; Fleischauer MD; Cadien KC
ACS Appl Mater Interfaces; 2020 Sep; 12(39):44225-44237. PubMed ID: 32865966
[TBL] [Abstract][Full Text] [Related]
34. Thin-film barrier performance of zirconium oxide using the low-temperature atomic layer deposition method.
Duan Y; Sun F; Yang Y; Chen P; Yang D; Duan Y; Wang X
ACS Appl Mater Interfaces; 2014 Mar; 6(6):3799-804. PubMed ID: 24598603
[TBL] [Abstract][Full Text] [Related]
35. Impacts of Thermal Atomic Layer-Deposited AlN Passivation Layer on GaN-on-Si High Electron Mobility Transistors.
Zhao SX; Liu XY; Zhang LQ; Huang HF; Shi JS; Wang PF
Nanoscale Res Lett; 2016 Dec; 11(1):137. PubMed ID: 26964559
[TBL] [Abstract][Full Text] [Related]
36. Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N
Faraz T; van Drunen M; Knoops HC; Mallikarjunan A; Buchanan I; Hausmann DM; Henri J; Kessels WM
ACS Appl Mater Interfaces; 2017 Jan; 9(2):1858-1869. PubMed ID: 28059494
[TBL] [Abstract][Full Text] [Related]
37. Growth of crystalline Gd2O3 thin films with a high-quality interface on Si(100) by low-temperature H2O-assisted atomic layer deposition.
Milanov AP; Xu K; Laha A; Bugiel E; Ranjith R; Schwendt D; Osten HJ; Parala H; Fischer RA; Devi A
J Am Chem Soc; 2010 Jan; 132(1):36-7. PubMed ID: 20000721
[TBL] [Abstract][Full Text] [Related]
38. Growth of La1-xSrxFeO3 thin films by atomic layer deposition.
Lie M; Nilsen O; Fjellvåg H; Kjekshus A
Dalton Trans; 2009 Jan; (3):481-9. PubMed ID: 19122905
[TBL] [Abstract][Full Text] [Related]
39. Atomic layer deposition of SiO2 thin films using tetrakis(ethylamino)silane and ozone.
Kim JK; Jin K; Jung J; Rha SK; Lee WJ
J Nanosci Nanotechnol; 2012 Apr; 12(4):3589-92. PubMed ID: 22849174
[TBL] [Abstract][Full Text] [Related]
40. A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD.
Wang W; Wang H; Yang W; Zhu Y; Li G
Sci Rep; 2016 Apr; 6():24448. PubMed ID: 27101930
[TBL] [Abstract][Full Text] [Related]
[Previous] [Next] [New Search]
