These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

346 related articles for article (PubMed ID: 25514177)

  • 21. Low Schottky barrier black phosphorus field-effect devices with ferromagnetic tunnel contacts.
    Kamalakar MV; Madhushankar BN; Dankert A; Dash SP
    Small; 2015 May; 11(18):2209-16. PubMed ID: 25586013
    [TBL] [Abstract][Full Text] [Related]  

  • 22. Polymer Electrolyte Blend Gate Dielectrics for High-Performance Ultrathin Organic Transistors: Toward Favorable Polymer Blend Miscibility and Reliability.
    Nketia-Yawson B; Tabi GD; Noh YY
    ACS Appl Mater Interfaces; 2019 May; 11(19):17610-17616. PubMed ID: 31018635
    [TBL] [Abstract][Full Text] [Related]  

  • 23. Top-gated graphene field-effect transistors with high normalized transconductance and designable dirac point voltage.
    Xu H; Zhang Z; Xu H; Wang Z; Wang S; Peng LM
    ACS Nano; 2011 Jun; 5(6):5031-7. PubMed ID: 21528892
    [TBL] [Abstract][Full Text] [Related]  

  • 24. Fundamental Limits on the Subthreshold Slope in Schottky Source/Drain Black Phosphorus Field-Effect Transistors.
    Haratipour N; Namgung S; Oh SH; Koester SJ
    ACS Nano; 2016 Mar; 10(3):3791-800. PubMed ID: 26914179
    [TBL] [Abstract][Full Text] [Related]  

  • 25. Oxide-confined formation of germanium nanowire heterostructures for high-performance transistors.
    Tang J; Wang CY; Xiu F; Lang M; Chu LW; Tsai CJ; Chueh YL; Chen LJ; Wang KL
    ACS Nano; 2011 Jul; 5(7):6008-15. PubMed ID: 21699197
    [TBL] [Abstract][Full Text] [Related]  

  • 26. Electrolyte-gated, high mobility inorganic oxide transistors from printed metal halides.
    Garlapati SK; Mishra N; Dehm S; Hahn R; Kruk R; Hahn H; Dasgupta S
    ACS Appl Mater Interfaces; 2013 Nov; 5(22):11498-502. PubMed ID: 24224773
    [TBL] [Abstract][Full Text] [Related]  

  • 27. Metal Semiconductor Field-Effect Transistor with MoS2/Conducting NiO(x) van der Waals Schottky Interface for Intrinsic High Mobility and Photoswitching Speed.
    Lee HS; Baik SS; Lee K; Min SW; Jeon PJ; Kim JS; Choi K; Choi HJ; Kim JH; Im S
    ACS Nano; 2015 Aug; 9(8):8312-20. PubMed ID: 26169189
    [TBL] [Abstract][Full Text] [Related]  

  • 28. Contact Effect of ReS
    Park JY; Joe HE; Yoon HS; Yoo S; Kim T; Kang K; Min BK; Jun SC
    ACS Appl Mater Interfaces; 2017 Aug; 9(31):26325-26332. PubMed ID: 28718280
    [TBL] [Abstract][Full Text] [Related]  

  • 29. Graphene-like metal-on-silicon field-effect transistor.
    Dragoman M; Konstantinidis G; Tsagaraki K; Kostopoulos T; Dragoman D; Neculoiu D
    Nanotechnology; 2012 Aug; 23(30):305201. PubMed ID: 22750795
    [TBL] [Abstract][Full Text] [Related]  

  • 30. Near-ideal subthreshold swing MoS
    Pan Y; Jia K; Huang K; Wu Z; Bai G; Yu J; Zhang Z; Zhang Q; Yin H
    Nanotechnology; 2019 Mar; 30(9):095202. PubMed ID: 30561381
    [TBL] [Abstract][Full Text] [Related]  

  • 31. Strain-Gated Field Effect Transistor of a MoS2-ZnO 2D-1D Hybrid Structure.
    Chen L; Xue F; Li X; Huang X; Wang L; Kou J; Wang ZL
    ACS Nano; 2016 Jan; 10(1):1546-51. PubMed ID: 26695840
    [TBL] [Abstract][Full Text] [Related]  

  • 32. Carbon nanotube feedback-gate field-effect transistor: suppressing current leakage and increasing on/off ratio.
    Qiu C; Zhang Z; Zhong D; Si J; Yang Y; Peng LM
    ACS Nano; 2015 Jan; 9(1):969-77. PubMed ID: 25545108
    [TBL] [Abstract][Full Text] [Related]  

  • 33. Metal to Insulator Quantum-Phase Transition in Few-Layered ReS₂.
    Pradhan NR; McCreary A; Rhodes D; Lu Z; Feng S; Manousakis E; Smirnov D; Namburu R; Dubey M; Walker AR; Terrones H; Terrones M; Dobrosavljevic V; Balicas L
    Nano Lett; 2015 Dec; 15(12):8377-84. PubMed ID: 26599563
    [TBL] [Abstract][Full Text] [Related]  

  • 34. Polymer electrolyte-gated organic field-effect transistors: low-voltage, high-current switches for organic electronics and testbeds for probing electrical transport at high charge carrier density.
    Panzer MJ; Frisbie CD
    J Am Chem Soc; 2007 May; 129(20):6599-607. PubMed ID: 17472381
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Nanocrystalline cellulose applied simultaneously as the gate dielectric and the substrate in flexible field effect transistors.
    Gaspar D; Fernandes SN; de Oliveira AG; Fernandes JG; Grey P; Pontes RV; Pereira L; Martins R; Godinho MH; Fortunato E
    Nanotechnology; 2014 Mar; 25(9):094008. PubMed ID: 24522012
    [TBL] [Abstract][Full Text] [Related]  

  • 36. Ambipolar molybdenum diselenide field-effect transistors: field-effect and Hall mobilities.
    Pradhan NR; Rhodes D; Xin Y; Memaran S; Bhaskaran L; Siddiq M; Hill S; Ajayan PM; Balicas L
    ACS Nano; 2014 Aug; 8(8):7923-9. PubMed ID: 25007391
    [TBL] [Abstract][Full Text] [Related]  

  • 37. Mobility overestimation due to gated contacts in organic field-effect transistors.
    Bittle EG; Basham JI; Jackson TN; Jurchescu OD; Gundlach DJ
    Nat Commun; 2016 Mar; 7():10908. PubMed ID: 26961271
    [TBL] [Abstract][Full Text] [Related]  

  • 38. High-performance single layered WSe₂ p-FETs with chemically doped contacts.
    Fang H; Chuang S; Chang TC; Takei K; Takahashi T; Javey A
    Nano Lett; 2012 Jul; 12(7):3788-92. PubMed ID: 22697053
    [TBL] [Abstract][Full Text] [Related]  

  • 39. Static and Dynamic Performance of Complementary Inverters Based on Nanosheet α-MoTe2 p-Channel and MoS2 n-Channel Transistors.
    Pezeshki A; Hosseini Shokouh SH; Jeon PJ; Shackery I; Kim JS; Oh IK; Jun SC; Kim H; Im S
    ACS Nano; 2016 Jan; 10(1):1118-25. PubMed ID: 26631357
    [TBL] [Abstract][Full Text] [Related]  

  • 40. Fully solution-processed low-voltage aqueous In2O3 thin-film transistors using an ultrathin ZrO(x) dielectric.
    Liu A; Liu GX; Zhu HH; Xu F; Fortunato E; Martins R; Shan FK
    ACS Appl Mater Interfaces; 2014 Oct; 6(20):17364-9. PubMed ID: 25285983
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 18.