These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

346 related articles for article (PubMed ID: 25514177)

  • 41. Metal/nanowire contacts, quantum confinement, and their roles in the generation of new, gigantic actions in nanowire transistors.
    Mohammad SN
    Nanotechnology; 2013 Nov; 24(45):455201. PubMed ID: 24129340
    [TBL] [Abstract][Full Text] [Related]  

  • 42. High-mobility transparent thin-film transistors with an Sb-doped SnO2 nanocrystal channel fabricated at room temperature.
    Sun J; Lu A; Wang L; Hu Y; Wan Q
    Nanotechnology; 2009 Aug; 20(33):335204. PubMed ID: 19636097
    [TBL] [Abstract][Full Text] [Related]  

  • 43. Impact of contact resistance on the electrical properties of MoS
    Giannazzo F; Fisichella G; Piazza A; Di Franco S; Greco G; Agnello S; Roccaforte F
    Beilstein J Nanotechnol; 2017; 8():254-263. PubMed ID: 28243564
    [TBL] [Abstract][Full Text] [Related]  

  • 44. Sulfur vacancy activated field effect transistors based on ReS2 nanosheets.
    Xu K; Deng HX; Wang Z; Huang Y; Wang F; Li SS; Luo JW; He J
    Nanoscale; 2015 Oct; 7(38):15757-62. PubMed ID: 26352273
    [TBL] [Abstract][Full Text] [Related]  

  • 45. Few-layered titanium trisulfide (TiS3) field-effect transistors.
    Lipatov A; Wilson PM; Shekhirev M; Teeter JD; Netusil R; Sinitskii A
    Nanoscale; 2015 Aug; 7(29):12291-6. PubMed ID: 26129825
    [TBL] [Abstract][Full Text] [Related]  

  • 46. Schottky barrier thin film transistors using solution-processed n-ZnO.
    Adl AH; Ma A; Gupta M; Benlamri M; Tsui YY; Barlage DW; Shankar K
    ACS Appl Mater Interfaces; 2012 Mar; 4(3):1423-8. PubMed ID: 22387678
    [TBL] [Abstract][Full Text] [Related]  

  • 47. Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage.
    Lee GH; Cui X; Kim YD; Arefe G; Zhang X; Lee CH; Ye F; Watanabe K; Taniguchi T; Kim P; Hone J
    ACS Nano; 2015 Jul; 9(7):7019-26. PubMed ID: 26083310
    [TBL] [Abstract][Full Text] [Related]  

  • 48. High-Mobility InSe Transistors: The Role of Surface Oxides.
    Ho PH; Chang YR; Chu YC; Li MK; Tsai CA; Wang WH; Ho CH; Chen CW; Chiu PW
    ACS Nano; 2017 Jul; 11(7):7362-7370. PubMed ID: 28661128
    [TBL] [Abstract][Full Text] [Related]  

  • 49. End-Bonded Metal Contacts on WSe
    Chu CH; Lin HC; Yeh CH; Liang ZY; Chou MY; Chiu PW
    ACS Nano; 2019 Jul; 13(7):8146-8154. PubMed ID: 31244047
    [TBL] [Abstract][Full Text] [Related]  

  • 50. Nanosheet thickness-modulated MoS2 dielectric property evidenced by field-effect transistor performance.
    Min SW; Lee HS; Choi HJ; Park MK; Nam T; Kim H; Ryu S; Im S
    Nanoscale; 2013 Jan; 5(2):548-51. PubMed ID: 23233087
    [TBL] [Abstract][Full Text] [Related]  

  • 51. Accurate Threshold Voltage Reliability Evaluation of Thin Al
    Goyal N; Parihar N; Jawa H; Mahapatra S; Lodha S
    ACS Appl Mater Interfaces; 2019 Jul; 11(26):23673-23680. PubMed ID: 31252490
    [TBL] [Abstract][Full Text] [Related]  

  • 52. Improved Drain Current Saturation and Voltage Gain in Graphene-on-Silicon Field Effect Transistors.
    Song SM; Bong JH; Hwang WS; Cho BJ
    Sci Rep; 2016 May; 6():25392. PubMed ID: 27142861
    [TBL] [Abstract][Full Text] [Related]  

  • 53. Controllable electrical properties of metal-doped In2O3 nanowires for high-performance enhancement-mode transistors.
    Zou X; Liu X; Wang C; Jiang Y; Wang Y; Xiao X; Ho JC; Li J; Jiang C; Xiong Q; Liao L
    ACS Nano; 2013 Jan; 7(1):804-10. PubMed ID: 23228028
    [TBL] [Abstract][Full Text] [Related]  

  • 54. Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors.
    Chuang HJ; Chamlagain B; Koehler M; Perera MM; Yan J; Mandrus D; Tománek D; Zhou Z
    Nano Lett; 2016 Mar; 16(3):1896-902. PubMed ID: 26844954
    [TBL] [Abstract][Full Text] [Related]  

  • 55. Current saturation in submicrometer graphene transistors with thin gate dielectric: experiment, simulation, and theory.
    Han SJ; Reddy D; Carpenter GD; Franklin AD; Jenkins KA
    ACS Nano; 2012 Jun; 6(6):5220-6. PubMed ID: 22582702
    [TBL] [Abstract][Full Text] [Related]  

  • 56. Effect of Back-Gate Voltage on the High-Frequency Performance of Dual-Gate MoS
    Gao Q; Zhang C; Liu P; Hu Y; Yang K; Yi Z; Liu L; Pan X; Zhang Z; Yang J; Chi F
    Nanomaterials (Basel); 2021 Jun; 11(6):. PubMed ID: 34204492
    [TBL] [Abstract][Full Text] [Related]  

  • 57. High-performance top-gated monolayer SnS2 field-effect transistors and their integrated logic circuits.
    Song HS; Li SL; Gao L; Xu Y; Ueno K; Tang J; Cheng YB; Tsukagoshi K
    Nanoscale; 2013 Oct; 5(20):9666-70. PubMed ID: 23989804
    [TBL] [Abstract][Full Text] [Related]  

  • 58. Threshold Voltage Control of Multilayered MoS
    Roh J; Ryu JH; Baek GW; Jung H; Seo SG; An K; Jeong BG; Lee DC; Hong BH; Bae WK; Lee JH; Lee C; Jin SH
    Small; 2019 Feb; 15(7):e1803852. PubMed ID: 30637933
    [TBL] [Abstract][Full Text] [Related]  

  • 59. Low-voltage back-gated atmospheric pressure chemical vapor deposition based graphene-striped channel transistor with high-κ dielectric showing room-temperature mobility > 11,000 cm(2)/V·s.
    Smith C; Qaisi R; Liu Z; Yu Q; Hussain MM
    ACS Nano; 2013 Jul; 7(7):5818-23. PubMed ID: 23777434
    [TBL] [Abstract][Full Text] [Related]  

  • 60. Local-gated single-walled carbon nanotube field effect transistors assembled by AC dielectrophoresis.
    Stokes P; Khondaker SI
    Nanotechnology; 2008 Apr; 19(17):175202. PubMed ID: 21825663
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 18.