These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

170 related articles for article (PubMed ID: 25520590)

  • 21. Analog/RF Performance of T-Shape Gate Dual-Source Tunnel Field-Effect Transistor.
    Chen S; Liu H; Wang S; Li W; Wang X; Zhao L
    Nanoscale Res Lett; 2018 Oct; 13(1):321. PubMed ID: 30315380
    [TBL] [Abstract][Full Text] [Related]  

  • 22. Development and Analysis of a Three-Fin Trigate Q-FinFET for a 3 nm Technology Node with a Strained-Silicon Channel System.
    Nanda S; Dhar RS; Awwad F; Hussein MI
    Nanomaterials (Basel); 2023 May; 13(10):. PubMed ID: 37242078
    [TBL] [Abstract][Full Text] [Related]  

  • 23. Reducing Off-State and Leakage Currents by Dielectric Permittivity-Graded Stacked Gate Oxides on Trigate FinFETs: A TCAD Study.
    Ülkü A; Uçar E; Serin RB; Kaçar R; Artuç M; Menşur E; Oral AY
    Micromachines (Basel); 2024 May; 15(6):. PubMed ID: 38930696
    [TBL] [Abstract][Full Text] [Related]  

  • 24. Quantum mechanical device modeling: FinFET having an isolated n+/p+ gate region strapped with poly-silicon.
    Kim HG; Kim JS; Kim YK; Won T
    J Nanosci Nanotechnol; 2007 Nov; 7(11):4135-8. PubMed ID: 18047135
    [TBL] [Abstract][Full Text] [Related]  

  • 25. Implementation and performance analysis of QPSK system using pocket double gate asymmetric JLTFET for satellite communications.
    Boggarapu L; B L
    Sci Rep; 2023 Feb; 13(1):3057. PubMed ID: 36810768
    [TBL] [Abstract][Full Text] [Related]  

  • 26. Damage-free mica/MoS
    Zou X; Xu J; Liu L; Wang H; Lai PT; Tang WM
    Nanotechnology; 2019 Aug; 30(34):345204. PubMed ID: 31067521
    [TBL] [Abstract][Full Text] [Related]  

  • 27. Threshold voltage fluctuation in 16-nm-gate FinFets induced by random work function of nanosized metal grain.
    Li Y; Cheng HW; Hwang CH
    J Nanosci Nanotechnol; 2012 Jun; 12(6):4485-8. PubMed ID: 22905489
    [TBL] [Abstract][Full Text] [Related]  

  • 28. The Characteristics of Transparent Non-Volatile Memory Devices Employing Si-Rich SiO
    Park JH; Shin MH; Yi JS
    Nanomaterials (Basel); 2019 May; 9(5):. PubMed ID: 31121917
    [TBL] [Abstract][Full Text] [Related]  

  • 29. Characterizing the electrical properties of raised S/D junctionless thin-film transistors with a dual-gate structure.
    Cheng YC; Chen HB; Su JJ; Shao CS; Wang CP; Chang CY; Wu YC
    Nanoscale Res Lett; 2014 Dec; 9(1):2494. PubMed ID: 26089001
    [TBL] [Abstract][Full Text] [Related]  

  • 30. Characteristic Fluctuations of Dynamic Power Delay Induced by Random Nanosized Titanium Nitride Grains and the Aspect Ratio Effect of Gate-All-Around Nanowire CMOS Devices and Circuits.
    Li Y; Chen CY; Chuang MH; Chao PJ
    Materials (Basel); 2019 May; 12(9):. PubMed ID: 31071936
    [TBL] [Abstract][Full Text] [Related]  

  • 31. Interface Trap Effect on the n-Channel GaN Schottky Barrier-Metal-Oxide Semiconductor Field-Effect Transistor for Ultraviolet Optoelectronic Integration.
    Park BJ; Kim HS; Hahm SH
    Nanomaterials (Basel); 2023 Dec; 14(1):. PubMed ID: 38202514
    [TBL] [Abstract][Full Text] [Related]  

  • 32. The impact of structural parameters on the electrical characteristics of silicon nano wire transistor based on non equilibrium Green's function.
    Fatemeh-Karimi ; Hamdam-Ghanatian ; Morteza-Fathipour
    J Nanosci Nanotechnol; 2012 Feb; 12(2):1131-5. PubMed ID: 22629907
    [TBL] [Abstract][Full Text] [Related]  

  • 33. High-Yield Production of High-κ/Metal Gate Nanopattern Array for 2D Devices via Oxidation-Assisted Etching Approach.
    Hong W; Zhang J; Zeng D; Wang C; Xue Z; Zhang M; Tian Z; Di Z
    Small; 2024 Aug; ():e2403187. PubMed ID: 39092678
    [TBL] [Abstract][Full Text] [Related]  

  • 34. Probing Interface Defects in Top-Gated MoS
    Zhao P; Azcatl A; Gomeniuk YY; Bolshakov P; Schmidt M; McDonnell SJ; Hinkle CL; Hurley PK; Wallace RM; Young CD
    ACS Appl Mater Interfaces; 2017 Jul; 9(28):24348-24356. PubMed ID: 28650155
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Simulation of Novel Nano Low-Dimensional FETs at the Scaling Limit.
    Guo P; Zhou Y; Yang H; Pan J; Yin J; Zhao B; Liu S; Peng J; Jia X; Jia M; Yang Y; Ren T
    Nanomaterials (Basel); 2024 Aug; 14(17):. PubMed ID: 39269037
    [TBL] [Abstract][Full Text] [Related]  

  • 36. Electrical characteristic analysis using low-frequency noise in low-temperature polysilicon thin film transistors.
    Kim YM; Jeong KS; Yun HJ; Yang SD; Lee SY; Kim MJ; Kwon OS; Jeong CW; Kim JY; Kim SC; Lee GW
    J Nanosci Nanotechnol; 2012 Jul; 12(7):5532-6. PubMed ID: 22966605
    [TBL] [Abstract][Full Text] [Related]  

  • 37. Degradation Induced by Total Ionizing Dose and Hot Carrier Injection in SOI FinFET Devices.
    Yu H; Zhou W; Liu H; Wang S; Chen S; Liu C
    Micromachines (Basel); 2024 Aug; 15(8):. PubMed ID: 39203677
    [TBL] [Abstract][Full Text] [Related]  

  • 38. High-Performance P- and N-Type SiGe/Si Strained Super-Lattice FinFET and CMOS Inverter: Comparison of Si and SiGe FinFET.
    Yao YJ; Yang CR; Tseng TY; Chang HJ; Lin TJ; Luo GL; Hou FJ; Wu YC; Chang-Liao KS
    Nanomaterials (Basel); 2023 Apr; 13(8):. PubMed ID: 37110895
    [TBL] [Abstract][Full Text] [Related]  

  • 39. Amorphous Strontium Titanate Film as Gate Dielectric for Higher Performance and Low Voltage Operation of Transparent and Flexible Organic Field Effect Transistor.
    Yadav S; Ghosh S
    ACS Appl Mater Interfaces; 2016 Apr; 8(16):10436-42. PubMed ID: 27029419
    [TBL] [Abstract][Full Text] [Related]  

  • 40. Negative-Capacitance Fin Field-Effect Transistor Beyond the 7-nm Node.
    Chen KT; Qiu YY; Tang M; Lee CF; Dai YL; Lee MH; Chang ST
    J Nanosci Nanotechnol; 2018 Oct; 18(10):6873-6878. PubMed ID: 29954505
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 9.