143 related articles for article (PubMed ID: 25551065)
1. Si/Ge intermixing during Ge Stranski-Krastanov growth.
Portavoce A; Hoummada K; Ronda A; Mangelinck D; Berbezier I
Beilstein J Nanotechnol; 2014; 5():2374-82. PubMed ID: 25551065
[TBL] [Abstract][Full Text] [Related]
2. Modified Stranski-Krastanov growth in Ge/Si heterostructures via nanostenciled pulsed laser deposition.
MacLeod JM; Cojocaru CV; Ratto F; Harnagea C; Bernardi A; Alonso MI; Rosei F
Nanotechnology; 2012 Feb; 23(6):065603. PubMed ID: 22248479
[TBL] [Abstract][Full Text] [Related]
3. Stranski-Krastanow growth of germanium on silicon nanowires.
Pan L; Lew KK; Redwing JM; Dickey EC
Nano Lett; 2005 Jun; 5(6):1081-5. PubMed ID: 15943447
[TBL] [Abstract][Full Text] [Related]
4. Ge-rich islands grown on patterned Si substrates by low-energy plasma-enhanced chemical vapour deposition.
Bollani M; Chrastina D; Fedorov A; Sordan R; Picco A; Bonera E
Nanotechnology; 2010 Nov; 21(47):475302. PubMed ID: 21030775
[TBL] [Abstract][Full Text] [Related]
5. Recipes for the fabrication of strictly ordered Ge islands on pit-patterned Si(001) substrates.
Grydlik M; Langer G; Fromherz T; Schäffler F; Brehm M
Nanotechnology; 2013 Mar; 24(10):105601. PubMed ID: 23416837
[TBL] [Abstract][Full Text] [Related]
6. Kinetic Monte Carlo simulations of self-organization of Ge islands on Si(001).
Ghosh P; Gupta N; Dhankhar M; Ranganathan M
Phys Chem Chem Phys; 2021 Sep; 23(34):19022-19031. PubMed ID: 34612440
[TBL] [Abstract][Full Text] [Related]
7. Ultra-steep side facets in multi-faceted SiGe/Si(001) Stranski-Krastanow islands.
Brehm M; Lichtenberger H; Fromherz T; Springholz G
Nanoscale Res Lett; 2011 Jan; 6(1):70. PubMed ID: 21711579
[TBL] [Abstract][Full Text] [Related]
8. Photodetection in Hybrid Single-Layer Graphene/Fully Coherent Germanium Island Nanostructures Selectively Grown on Silicon Nanotip Patterns.
Niu G; Capellini G; Lupina G; Niermann T; Salvalaglio M; Marzegalli A; Schubert MA; Zaumseil P; Krause HM; Skibitzki O; Lehmann M; Montalenti F; Xie YH; Schroeder T
ACS Appl Mater Interfaces; 2016 Jan; 8(3):2017-26. PubMed ID: 26709534
[TBL] [Abstract][Full Text] [Related]
9. On morphology and strain field of Ge/Si(001) Islands according to TEM phase imaging method.
Donnadieu P; Neisius T; Amiard G; Gouyé A; Ronda A; Berbezier I
J Nanosci Nanotechnol; 2011 Oct; 11(10):9208-14. PubMed ID: 22400325
[TBL] [Abstract][Full Text] [Related]
10. Atomic structure and composition distribution in wetting layers and islands of germanium grown on silicon (001) substrates.
Brehm M; Groiss H; Bauer G; Gerthsen D; Clarke R; Paltiel Y; Yacoby Y
Nanotechnology; 2015 Dec; 26(48):485702. PubMed ID: 26553384
[TBL] [Abstract][Full Text] [Related]
11. Minute SiGe quantum dots on Si(001) by a kinetic 3D island mode.
Koch R; Wedler G; Schulz JJ; Wassermann B
Phys Rev Lett; 2001 Sep; 87(13):136104. PubMed ID: 11580610
[TBL] [Abstract][Full Text] [Related]
12. Ge quantum dots structural peculiarities depending on the preparation conditions.
Erenburg S; Bausk N; Mazalov L; Nikiforov A; Yakimov A
J Synchrotron Radiat; 2003 Sep; 10(Pt 5):380-3. PubMed ID: 12944626
[TBL] [Abstract][Full Text] [Related]
13. Facet-Selective Nucleation and Conformal Epitaxy of Ge Shells on Si Nanowires.
Nguyen BM; Swartzentruber B; Ro YG; Dayeh SA
Nano Lett; 2015 Nov; 15(11):7258-64. PubMed ID: 26447652
[TBL] [Abstract][Full Text] [Related]
14. Secondary growth mechanism of SiGe islands deposited on a mixed-phase microcrystalline Si by ion beam co-sputtering.
Ke SY; Yang J; Qiu F; Wang ZQ; Wang C; Yang Y
Nanotechnology; 2015 Nov; 26(44):445602. PubMed ID: 26457572
[TBL] [Abstract][Full Text] [Related]
15. Critical role of a buried interface in the Stranski-Krastanov growth of metallic nanocrystals: quantum size effects in Ag/Si(111)-(7×7).
Chen Y; Gramlich MW; Hayden ST; Miceli PF
Phys Rev Lett; 2015 Jan; 114(3):035501. PubMed ID: 25659005
[TBL] [Abstract][Full Text] [Related]
16. Effect of strain on the appearance of subcritical nuclei of ge nanohuts on Si(001).
Goldfarb I
Phys Rev Lett; 2005 Jul; 95(2):025501. PubMed ID: 16090695
[TBL] [Abstract][Full Text] [Related]
17. Identification of Ge/Si intermixing processes at the Bi/Ge/Si(111) surface.
Paul N; Filimonov S; Cherepanov V; Cakmak M; Voigtländer B
Phys Rev Lett; 2007 Apr; 98(16):166104. PubMed ID: 17501435
[TBL] [Abstract][Full Text] [Related]
18. Evolution of Ge nanoislands on Si(110)-'16 x 2' surface under thermal annealing studied using STM.
Gangopadhyay S; Yoshimura M; Ueda K
Nanotechnology; 2009 Nov; 20(47):475401. PubMed ID: 19875880
[TBL] [Abstract][Full Text] [Related]
19. Initial stage growth of GexSi1-x layers and Ge quantum dot formation on GexSi1-x surface by MBE.
Nikiforov AI; Timofeev VA; Teys SA; Gutakovsky AK; Pchelyakov OP
Nanoscale Res Lett; 2012 Oct; 7(1):561. PubMed ID: 23043796
[TBL] [Abstract][Full Text] [Related]
20. Observation and nucleation control of Ge nanoislands on Si(111) surfaces using scanning reflection electron microscopy.
Shibata M; Shklyaev AA; Ichikawa M
J Electron Microsc (Tokyo); 2000; 49(2):217-23. PubMed ID: 11108044
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
