1871 related articles for article (PubMed ID: 25555202)
1. Single-layer MoS2 electronics.
Lembke D; Bertolazzi S; Kis A
Acc Chem Res; 2015 Jan; 48(1):100-10. PubMed ID: 25555202
[TBL] [Abstract][Full Text] [Related]
2. Transition metal dichalcogenides and beyond: synthesis, properties, and applications of single- and few-layer nanosheets.
Lv R; Robinson JA; Schaak RE; Sun D; Sun Y; Mallouk TE; Terrones M
Acc Chem Res; 2015 Jan; 48(1):56-64. PubMed ID: 25490673
[TBL] [Abstract][Full Text] [Related]
3. Transition metal chalcogenides: ultrathin inorganic materials with tunable electronic properties.
Heine T
Acc Chem Res; 2015 Jan; 48(1):65-72. PubMed ID: 25489917
[TBL] [Abstract][Full Text] [Related]
4. Electronic structure and optical signatures of semiconducting transition metal dichalcogenide nanosheets.
Zhao W; Ribeiro RM; Eda G
Acc Chem Res; 2015 Jan; 48(1):91-9. PubMed ID: 25515381
[TBL] [Abstract][Full Text] [Related]
5. Preparation and applications of mechanically exfoliated single-layer and multilayer MoS₂ and WSe₂ nanosheets.
Li H; Wu J; Yin Z; Zhang H
Acc Chem Res; 2014 Apr; 47(4):1067-75. PubMed ID: 24697842
[TBL] [Abstract][Full Text] [Related]
6. Two-dimensional transition metal dichalcogenides as atomically thin semiconductors: opportunities and challenges.
Duan X; Wang C; Pan A; Yu R; Duan X
Chem Soc Rev; 2015 Dec; 44(24):8859-76. PubMed ID: 26479493
[TBL] [Abstract][Full Text] [Related]
7. MoS2 transistors operating at gigahertz frequencies.
Krasnozhon D; Lembke D; Nyffeler C; Leblebici Y; Kis A
Nano Lett; 2014 Oct; 14(10):5905-11. PubMed ID: 25243885
[TBL] [Abstract][Full Text] [Related]
8. Flexible Molybdenum Disulfide (MoS
Singh E; Singh P; Kim KS; Yeom GY; Nalwa HS
ACS Appl Mater Interfaces; 2019 Mar; 11(12):11061-11105. PubMed ID: 30830744
[TBL] [Abstract][Full Text] [Related]
9. Two dimensional atomically thin MoS2 nanosheets and their sensing applications.
Huang Y; Guo J; Kang Y; Ai Y; Li CM
Nanoscale; 2015 Dec; 7(46):19358-76. PubMed ID: 26554465
[TBL] [Abstract][Full Text] [Related]
10. Graphene oxide as a promising hole injection layer for MoS₂-based electronic devices.
Musso T; Kumar PV; Foster AS; Grossman JC
ACS Nano; 2014 Nov; 8(11):11432-9. PubMed ID: 25347209
[TBL] [Abstract][Full Text] [Related]
11. Optics, mechanics, and energetics of two-dimensional MoS2 nanostructures from a theoretical perspective.
Joswig JO; Lorenz T; Wendumu TB; Gemming S; Seifert G
Acc Chem Res; 2015 Jan; 48(1):48-55. PubMed ID: 25489859
[TBL] [Abstract][Full Text] [Related]
12. Ultrasensitive photodetectors based on monolayer MoS2.
Lopez-Sanchez O; Lembke D; Kayci M; Radenovic A; Kis A
Nat Nanotechnol; 2013 Jul; 8(7):497-501. PubMed ID: 23748194
[TBL] [Abstract][Full Text] [Related]
13. Flexible integrated circuits and multifunctional electronics based on single atomic layers of MoS2 and graphene.
Amani M; Burke RA; Proie RM; Dubey M
Nanotechnology; 2015 Mar; 26(11):115202. PubMed ID: 25709100
[TBL] [Abstract][Full Text] [Related]
14. Wide-range controllable n-doping of molybdenum disulfide (MoS2) through thermal and optical activation.
Park HY; Lim MH; Jeon J; Yoo G; Kang DH; Jang SK; Jeon MH; Lee Y; Cho JH; Yeom GY; Jung WS; Lee J; Park S; Lee S; Park JH
ACS Nano; 2015 Mar; 9(3):2368-76. PubMed ID: 25692499
[TBL] [Abstract][Full Text] [Related]
15. Synthesis and defect investigation of two-dimensional molybdenum disulfide atomic layers.
Najmaei S; Yuan J; Zhang J; Ajayan P; Lou J
Acc Chem Res; 2015 Jan; 48(1):31-40. PubMed ID: 25490347
[TBL] [Abstract][Full Text] [Related]
16. Phonon and Raman scattering of two-dimensional transition metal dichalcogenides from monolayer, multilayer to bulk material.
Zhang X; Qiao XF; Shi W; Wu JB; Jiang DS; Tan PH
Chem Soc Rev; 2015 May; 44(9):2757-85. PubMed ID: 25679474
[TBL] [Abstract][Full Text] [Related]
17. Van der Waals Epitaxy of Two-Dimensional MoS2-Graphene Heterostructures in Ultrahigh Vacuum.
Miwa JA; Dendzik M; Grønborg SS; Bianchi M; Lauritsen JV; Hofmann P; Ulstrup S
ACS Nano; 2015 Jun; 9(6):6502-10. PubMed ID: 26039108
[TBL] [Abstract][Full Text] [Related]
18. Covalently-controlled properties by design in group IV graphane analogues.
Jiang S; Arguilla MQ; Cultrara ND; Goldberger JE
Acc Chem Res; 2015 Jan; 48(1):144-51. PubMed ID: 25490074
[TBL] [Abstract][Full Text] [Related]
19. Focusing on energy and optoelectronic applications: a journey for graphene and graphene oxide at large scale.
Wan X; Huang Y; Chen Y
Acc Chem Res; 2012 Apr; 45(4):598-607. PubMed ID: 22280410
[TBL] [Abstract][Full Text] [Related]
20. High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity.
Kang K; Xie S; Huang L; Han Y; Huang PY; Mak KF; Kim CJ; Muller D; Park J
Nature; 2015 Apr; 520(7549):656-60. PubMed ID: 25925478
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]