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8. Influence of nanoscale faceting on the tunneling properties of near broken gap InAs/AlGaSb heterojunctions grown by selective area epitaxy. Desplanque L; Fahed M; Han X; Chinni VK; Troadec D; Chauvat MP; Ruterana P; Wallart X Nanotechnology; 2014 Nov; 25(46):465302. PubMed ID: 25354494 [TBL] [Abstract][Full Text] [Related]
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