These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

125 related articles for article (PubMed ID: 25603117)

  • 21. Defect-Induced Nucleation and Epitaxy: A New Strategy toward the Rational Synthesis of WZ-GaN/3C-SiC Core-Shell Heterostructures.
    Liu B; Yang B; Yuan F; Liu Q; Shi D; Jiang C; Zhang J; Staedler T; Jiang X
    Nano Lett; 2015 Dec; 15(12):7837-46. PubMed ID: 26517395
    [TBL] [Abstract][Full Text] [Related]  

  • 22. Morphology of self-catalyzed GaN nanowires and chronology of their formation by molecular beam epitaxy.
    Galopin E; Largeau L; Patriarche G; Travers L; Glas F; Harmand JC
    Nanotechnology; 2011 Jun; 22(24):245606. PubMed ID: 21508494
    [TBL] [Abstract][Full Text] [Related]  

  • 23. Alignment control and atomically-scaled heteroepitaxial interface study of GaN nanowires.
    Liu Q; Liu B; Yang W; Yang B; Zhang X; Labbé C; Portier X; An V; Jiang X
    Nanoscale; 2017 Apr; 9(16):5212-5221. PubMed ID: 28397937
    [TBL] [Abstract][Full Text] [Related]  

  • 24. Position-controlled growth of GaN nanowires and nanotubes on diamond by molecular beam epitaxy.
    Schuster F; Hetzl M; Weiszer S; Garrido JA; de la Mata M; Magen C; Arbiol J; Stutzmann M
    Nano Lett; 2015 Mar; 15(3):1773-9. PubMed ID: 25633130
    [TBL] [Abstract][Full Text] [Related]  

  • 25. Controlled Coalescence of AlGaN Nanowire Arrays: An Architecture for Nearly Dislocation-Free Planar Ultraviolet Photonic Device Applications.
    Le BH; Zhao S; Liu X; Woo SY; Botton GA; Mi Z
    Adv Mater; 2016 Oct; 28(38):8446-8454. PubMed ID: 27489074
    [TBL] [Abstract][Full Text] [Related]  

  • 26. Selective-area growth of single-crystal wurtzite GaN nanorods on SiO
    Serban EA; Palisaitis J; Yeh CC; Hsu HC; Tsai YL; Kuo HC; Junaid M; Hultman L; Persson POÅ; Birch J; Hsiao CL
    Sci Rep; 2017 Oct; 7(1):12701. PubMed ID: 28983102
    [TBL] [Abstract][Full Text] [Related]  

  • 27. Polarity Control of Heteroepitaxial GaN Nanowires on Diamond.
    Hetzl M; Kraut M; Hoffmann T; Stutzmann M
    Nano Lett; 2017 Jun; 17(6):3582-3590. PubMed ID: 28535070
    [TBL] [Abstract][Full Text] [Related]  

  • 28. Growth characteristics of GaAs nanowires obtained by selective area metal-organic vapour-phase epitaxy.
    Ikejiri K; Sato T; Yoshida H; Hiruma K; Motohisa J; Hara S; Fukui T
    Nanotechnology; 2008 Jul; 19(26):265604. PubMed ID: 21828685
    [TBL] [Abstract][Full Text] [Related]  

  • 29. Selective area growth of In(Ga)N/GaN nanocolumns by molecular beam epitaxy on GaN-buffered Si(111): from ultraviolet to infrared emission.
    Albert S; Bengoechea-Encabo A; Sánchez-García MA; Kong X; Trampert A; Calleja E
    Nanotechnology; 2013 May; 24(17):175303. PubMed ID: 23558410
    [TBL] [Abstract][Full Text] [Related]  

  • 30. Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy.
    Bolshakov AD; Mozharov AM; Sapunov GA; Shtrom IV; Sibirev NV; Fedorov VV; Ubyivovk EV; Tchernycheva M; Cirlin GE; Mukhin IS
    Beilstein J Nanotechnol; 2018; 9():146-154. PubMed ID: 29441260
    [TBL] [Abstract][Full Text] [Related]  

  • 31. Structural and Optical Properties of Self-Assembled Epitaxially Grown GaN Nanorods and Nanoporous Film on Sapphire (0001) Using Laser Molecular Beam Epitaxy.
    Ramesh C; Tyagi P; Senthil Kumar M; Kushvaha SS
    J Nanosci Nanotechnol; 2020 Jun; 20(6):3839-3844. PubMed ID: 31748084
    [TBL] [Abstract][Full Text] [Related]  

  • 32. Growth by molecular beam epitaxy and properties of inclined GaN nanowires on Si(001) substrate.
    Borysiuk J; Zytkiewicz ZR; Sobanska M; Wierzbicka A; Klosek K; Korona KP; Perkowska PS; Reszka A
    Nanotechnology; 2014 Apr; 25(13):135610. PubMed ID: 24598248
    [TBL] [Abstract][Full Text] [Related]  

  • 33. Three-dimensional GaN/AlN nanowire heterostructures by separating nucleation and growth processes.
    Carnevale SD; Yang J; Phillips PJ; Mills MJ; Myers RC
    Nano Lett; 2011 Feb; 11(2):866-71. PubMed ID: 21265558
    [TBL] [Abstract][Full Text] [Related]  

  • 34. Lattice distortions in GaN on sapphire using the CBED-HOLZ technique.
    Sridhara Rao DV; McLaughlin K; Kappers MJ; Humphreys CJ
    Ultramicroscopy; 2009 Sep; 109(10):1250-5. PubMed ID: 19573990
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Selective Area Sublimation: A Simple Top-down Route for GaN-Based Nanowire Fabrication.
    Damilano B; Vézian S; Brault J; Alloing B; Massies J
    Nano Lett; 2016 Mar; 16(3):1863-8. PubMed ID: 26885770
    [TBL] [Abstract][Full Text] [Related]  

  • 36. Selective area growth of AlN/GaN nanocolumns on (0001) and (11-22) GaN/sapphire for semi-polar and non-polar AlN pseudo-templates.
    Bengoechea-Encabo A; Albert S; Müller M; Xie MY; Veit P; Bertram F; Sanchez-Garcia MA; Zúñiga-Pérez J; de Mierry P; Christen J; Calleja E
    Nanotechnology; 2017 Sep; 28(36):365704. PubMed ID: 28604369
    [TBL] [Abstract][Full Text] [Related]  

  • 37. Growth of large-scale vertically aligned GaN nanowires and their heterostructures with high uniformity on SiO(x) by catalyst-free molecular beam epitaxy.
    Zhao S; Kibria MG; Wang Q; Nguyen HP; Mi Z
    Nanoscale; 2013 Jun; 5(12):5283-7. PubMed ID: 23661186
    [TBL] [Abstract][Full Text] [Related]  

  • 38. Dual-wavelength GaN-based LEDs grown on truncated hexagonal pyramids formed by selective-area regrowth on Si-implanted GaN templates.
    Lee ML; Yeh YH; Tu SJ; Chen PC; Wu MJ; Lai WC; Sheu JK
    Opt Express; 2013 Sep; 21 Suppl 5():A864-71. PubMed ID: 24104581
    [TBL] [Abstract][Full Text] [Related]  

  • 39. Mechanical elasticity of vapour-liquid-solid grown GaN nanowires.
    Chen Y; Stevenson I; Pouy R; Wang L; McIlroy DN; Pounds T; Grant Norton M; Eric Aston D
    Nanotechnology; 2007 Apr; 18(13):135708. PubMed ID: 21730393
    [TBL] [Abstract][Full Text] [Related]  

  • 40. Absence of Quantum-Confined Stark Effect in GaN Quantum Disks Embedded in (Al,Ga)N Nanowires Grown by Molecular Beam Epitaxy.
    Sinito C; Corfdir P; Pfüller C; Gao G; Bartolomé J; Kölling S; Rodil Doblado A; Jahn U; Lähnemann J; Auzelle T; Zettler JK; Flissikowski T; Koenraad P; Grahn HT; Geelhaar L; Fernández-Garrido S; Brandt O
    Nano Lett; 2019 Sep; 19(9):5938-5948. PubMed ID: 31385709
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 7.