199 related articles for article (PubMed ID: 25607303)
1. Enhanced light output power of thin film GaN-based high voltage light-emitting diodes.
Tien CH; Chen KY; Hsu CP; Horng RH
Opt Express; 2014 Oct; 22 Suppl 6():A1462-8. PubMed ID: 25607303
[TBL] [Abstract][Full Text] [Related]
2. Surface plasmon-enhanced nanoporous GaN-based green light-emitting diodes with Al2O3 passivation layer.
Yu ZG; Zhao LX; Wei XC; Sun XJ; An PB; Zhu SC; Liu L; Tian LX; Zhang F; Lu HX; Wang JX; Zeng YP; Li JM
Opt Express; 2014 Oct; 22 Suppl 6():A1596-603. PubMed ID: 25607317
[TBL] [Abstract][Full Text] [Related]
3. Vertical InGaN light-emitting diodes with a sapphire-face-up structure.
Yang YC; Sheu JK; Lee ML; Tu SJ; Huang FW; Lai WC; Hon S; Ko TK
Opt Express; 2012 Jan; 20(1):A119-24. PubMed ID: 22379672
[TBL] [Abstract][Full Text] [Related]
4. Orange a-plane InGaN/GaN light-emitting diodes grown on r-plane sapphire substrates.
Seo YG; Baik KH; Song H; Son JS; Oh K; Hwang SM
Opt Express; 2011 Jul; 19(14):12919-24. PubMed ID: 21747444
[TBL] [Abstract][Full Text] [Related]
5. GaN light emitting diodes with wing-type imbedded contacts.
Horng RH; Shen KC; Kuo YW; Wuu DS
Opt Express; 2013 Jan; 21 Suppl 1():A1-6. PubMed ID: 23389261
[TBL] [Abstract][Full Text] [Related]
6. Improvement of light extraction efficiency of GaN-based light-emitting diodes using Ag nanostructure and indium tin oxide grating.
Dang S; Li C; Jia W; Zhang Z; Li T; Han P; Xu B
Opt Express; 2012 Oct; 20(21):23290-9. PubMed ID: 23188292
[TBL] [Abstract][Full Text] [Related]
7. Improvement of light output power of InGaN/GaN light-emitting diode by lateral epitaxial overgrowth using pyramidal-shaped SiO(2).
Cho CY; Lee JB; Lee SJ; Han SH; Park TY; Kim JW; Kim YC; Park SJ
Opt Express; 2010 Jan; 18(2):1462-8. PubMed ID: 20173974
[TBL] [Abstract][Full Text] [Related]
8. Improved performance of GaN-based vertical light emitting diodes with conducting and transparent single-walled carbon nanotube networks.
Kim SJ; Kim KH; Kim TG
Opt Express; 2013 Apr; 21(7):8062-8. PubMed ID: 23571896
[TBL] [Abstract][Full Text] [Related]
9. Laser-induced periodic structures for light extraction efficiency enhancement of GaN-based light emitting diodes.
Chen JT; Lai WC; Kao YJ; Yang YY; Sheu JK
Opt Express; 2012 Feb; 20(5):5689-95. PubMed ID: 22418376
[TBL] [Abstract][Full Text] [Related]
10. Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands.
Wei T; Kong Q; Wang J; Li J; Zeng Y; Wang G; Li J; Liao Y; Yi F
Opt Express; 2011 Jan; 19(2):1065-71. PubMed ID: 21263645
[TBL] [Abstract][Full Text] [Related]
11. High performance of InGaN light-emitting diodes by air-gap/GaN distributed Bragg reflectors.
Ryu JH; Kim HY; Kim HK; Katharria YS; Han N; Kang JH; Park YJ; Han M; Ryu BD; Ko KB; Suh EK; Hong CH
Opt Express; 2012 Apr; 20(9):9999-10003. PubMed ID: 22535092
[TBL] [Abstract][Full Text] [Related]
12. A nanoporous AlN layer patterned by anodic aluminum oxide and its application as a buffer layer in a GaN-based light-emitting diode.
Chen LC; Wang CK; Huang JB; Hong LS
Nanotechnology; 2009 Feb; 20(8):085303. PubMed ID: 19417447
[TBL] [Abstract][Full Text] [Related]
13. Enhancement of light extraction efficiency of GaN-based light-emitting diodes by ZnO nanorods with different sizes.
Oh S; Shin KS; Kim SW; Lee S; Yu H; Cho S; Kim KK
J Nanosci Nanotechnol; 2013 May; 13(5):3696-9. PubMed ID: 23858930
[TBL] [Abstract][Full Text] [Related]
14. Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer.
Zhang ZH; Tan ST; Liu W; Ju Z; Zheng K; Kyaw Z; Ji Y; Hasanov N; Sun XW; Demir HV
Opt Express; 2013 Feb; 21(4):4958-69. PubMed ID: 23482028
[TBL] [Abstract][Full Text] [Related]
15. MQWs InGaN/GaN LED with embedded micro-mirror array in the epitaxial-lateral-overgrowth gallium nitride for light extraction enhancement.
Huang CY; Ku HM; Liao CZ; Chao S
Opt Express; 2010 May; 18(10):10674-84. PubMed ID: 20588920
[TBL] [Abstract][Full Text] [Related]
16. Light extraction enhancement of bulk GaN light-emitting diode with hemisphere-cones-hybrid surface.
Sun B; Zhao L; Wei T; Yi X; Liu Z; Wang G; Li J; Yi F
Opt Express; 2012 Aug; 20(17):18537-44. PubMed ID: 23038492
[TBL] [Abstract][Full Text] [Related]
17. Enhanced light output of InGaN/GaN blue light emitting diodes with Ag nano-particles embedded in nano-needle layer.
Jang LW; Ju JW; Jeon DW; Park JW; Polyakov AY; Lee SJ; Baek JH; Lee SM; Cho YH; Lee IH
Opt Express; 2012 Mar; 20(6):6036-41. PubMed ID: 22418481
[TBL] [Abstract][Full Text] [Related]
18. Localized surface plasmon-enhanced near-ultraviolet emission from InGaN/GaN light-emitting diodes using silver and platinum nanoparticles.
Hong SH; Cho CY; Lee SJ; Yim SY; Lim W; Kim ST; Park SJ
Opt Express; 2013 Feb; 21(3):3138-44. PubMed ID: 23481772
[TBL] [Abstract][Full Text] [Related]
19. High-efficiency vertical GaN slab light-emitting diodes using self-coherent directional emitters.
Kim SK; Lee JW; Ee HS; Moon YT; Kwon SH; Kwon H; Park HG
Opt Express; 2010 May; 18(11):11025-32. PubMed ID: 20588958
[TBL] [Abstract][Full Text] [Related]
20. Coherent vertical beaming using Bragg mirrors for high-efficiency GaN light-emitting diodes.
Kim SK; Park HG
Opt Express; 2013 Jun; 21(12):14566-72. PubMed ID: 23787644
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]