These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

143 related articles for article (PubMed ID: 25651106)

  • 21. Geometric Nanophotonics: Light Management in Single Nanowires through Morphology.
    Kim S; Cahoon JF
    Acc Chem Res; 2019 Dec; 52(12):3511-3520. PubMed ID: 31799833
    [TBL] [Abstract][Full Text] [Related]  

  • 22. Characterization of a photodiode coupled with a Si nanowire-FET on a plastic substrate.
    Kwak K; Cho K; Kim S
    Sensors (Basel); 2010; 10(10):9118-26. PubMed ID: 22163398
    [TBL] [Abstract][Full Text] [Related]  

  • 23. Lateral, Ge, nanowire growth on SiO2.
    Quitoriano NJ; Kamins TI
    Nanotechnology; 2011 Feb; 22(6):065201. PubMed ID: 21212486
    [TBL] [Abstract][Full Text] [Related]  

  • 24. Electrical properties of flexible multi-channel Si nanowire field-effect transistors depending on the number of Si nanowires.
    Kim do H; Lee SJ; Lee SH; Myoung JM
    Chem Commun (Camb); 2016 May; 52(42):6938-41. PubMed ID: 27149060
    [TBL] [Abstract][Full Text] [Related]  

  • 25. Vapor-liquid-solid growth of endotaxial semiconductor nanowires.
    Li S; Huang X; Liu Q; Cao X; Huo F; Zhang H; Gan CL
    Nano Lett; 2012 Nov; 12(11):5565-70. PubMed ID: 23066984
    [TBL] [Abstract][Full Text] [Related]  

  • 26. Interface Passivation and Trap Reduction via a Solution-Based Method for Near-Zero Hysteresis Nanowire Field-Effect Transistors.
    Constantinou M; Stolojan V; Rajeev KP; Hinder S; Fisher B; Bogart TD; Korgel BA; Shkunov M
    ACS Appl Mater Interfaces; 2015 Oct; 7(40):22115-20. PubMed ID: 26402417
    [TBL] [Abstract][Full Text] [Related]  

  • 27. Monolayer contact doping of silicon surfaces and nanowires using organophosphorus compounds.
    Hazut O; Agarwala A; Subramani T; Waichman S; Yerushalmi R
    J Vis Exp; 2013 Dec; (82):50770. PubMed ID: 24326774
    [TBL] [Abstract][Full Text] [Related]  

  • 28. Preferred growth direction of III-V nanowires on differently oriented Si substrates.
    Zeng H; Yu X; Fonseka HA; Boras G; Jurczak P; Wang T; Sanchez AM; Liu H
    Nanotechnology; 2020 Nov; 31(47):475708. PubMed ID: 32885789
    [TBL] [Abstract][Full Text] [Related]  

  • 29. Si Donor Incorporation in GaN Nanowires.
    Fang Z; Robin E; Rozas-Jiménez E; Cros A; Donatini F; Mollard N; Pernot J; Daudin B
    Nano Lett; 2015 Oct; 15(10):6794-801. PubMed ID: 26426262
    [TBL] [Abstract][Full Text] [Related]  

  • 30. Structural characteristics of ternary In(x)Ga(1-x)As nanowires on Si (111) grown via Au-catalyzed VLS.
    Shin JC; Kim DY; Park JH; Oh SD; Ko HJ; Han MS; Kim JH; Choi KJ; Kim HJ
    J Nanosci Nanotechnol; 2013 May; 13(5):3511-4. PubMed ID: 23858890
    [TBL] [Abstract][Full Text] [Related]  

  • 31. Design and Analysis of Gallium Arsenide-Based Nanowire Using Coupled Non-Equilibrium Green Function for RF Hybrid Applications.
    Paramasivam P; Gowthaman N; Srivastava VM
    Nanomaterials (Basel); 2023 Mar; 13(6):. PubMed ID: 36985854
    [TBL] [Abstract][Full Text] [Related]  

  • 32. Growth time-dependent density and surface evolution of silicon nanowires in a vapor-liquid-solid process.
    Lee CY; Kim GS; Lee SY; Kim TH; Seo DW; Lee SK
    J Nanosci Nanotechnol; 2011 Aug; 11(8):6946-52. PubMed ID: 22103103
    [TBL] [Abstract][Full Text] [Related]  

  • 33. Growth of long III-As NWs by hydride vapor phase epitaxy.
    Gil E; Andre Y
    Nanotechnology; 2021 Apr; 32(16):162002. PubMed ID: 33434903
    [TBL] [Abstract][Full Text] [Related]  

  • 34. Unidirectional Pt silicide nanowires grown on vicinal Si(100).
    Lim DK; Bae SS; Choi J; Lee D; Sung da E; Kim S; Kim JK; Yeom HW; Lee H
    J Chem Phys; 2008 Mar; 128(9):094701. PubMed ID: 18331104
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Characterizing defects and transport in Si nanowire devices using Kelvin probe force microscopy.
    Bae SS; Prokopuk N; Quitoriano NJ; Adams SM; Ragan R
    Nanotechnology; 2012 Oct; 23(40):405706. PubMed ID: 22995919
    [TBL] [Abstract][Full Text] [Related]  

  • 36. Electrical characteristics of metal catalyst-assisted etched rough silicon nanowire depending on the diameter size.
    Lee SH; Lee TI; Lee SJ; Lee SM; Yun I; Myoung JM
    ACS Appl Mater Interfaces; 2015 Jan; 7(1):929-34. PubMed ID: 25526518
    [TBL] [Abstract][Full Text] [Related]  

  • 37. Multiple Schottky Barrier-Limited Field-Effect Transistors on a Single Silicon Nanowire with an Intrinsic Doping Gradient.
    Barreda JL; Keiper TD; Zhang M; Xiong P
    ACS Appl Mater Interfaces; 2017 Apr; 9(13):12046-12053. PubMed ID: 28274114
    [TBL] [Abstract][Full Text] [Related]  

  • 38. Selective-Area Growth of Vertical InGaAs/GaSb Core-Shell Nanowires on Silicon and Dual Switching Properties.
    Gamo H; Lian C; Motohisa J; Tomioka K
    ACS Nano; 2023 Sep; 17(18):18346-18351. PubMed ID: 37615535
    [TBL] [Abstract][Full Text] [Related]  

  • 39. Synthesis of p-type GaN nanowires.
    Kim SW; Park YH; Kim I; Park TE; Kwon BW; Choi WK; Choi HJ
    Nanoscale; 2013 Sep; 5(18):8550-4. PubMed ID: 23892611
    [TBL] [Abstract][Full Text] [Related]  

  • 40. Electrical characterization of composition modulated In(1-x)Sb(x) nanowire field effect transistors by scanning gate microscopy.
    Martinez-Morales AA; Penchev M; Zhong J; Jing X; Singh KV; Yengel E; Khan MI; Ozkan CS; Ozkan M
    J Nanosci Nanotechnol; 2010 Oct; 10(10):6779-82. PubMed ID: 21137796
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 8.