These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
151 related articles for article (PubMed ID: 25656811)
1. Native gallium adatoms discovered on atomically-smooth gallium nitride surfaces at low temperature. Alam K; Foley A; Smith AR Nano Lett; 2015 Mar; 15(3):2079-85. PubMed ID: 25656811 [TBL] [Abstract][Full Text] [Related]
2. Polar GaN Surfaces under Gallium Rich Conditions: Revised Thermodynamic Insights from Ab Initio Calculations. Kempisty P; Kawka K; Kusaba A; Kangawa Y Materials (Basel); 2023 Aug; 16(17):. PubMed ID: 37687674 [TBL] [Abstract][Full Text] [Related]
3. Aqueous stability of Ga- and N-polar gallium nitride. Foster CM; Collazo R; Sitar Z; Ivanisevic A Langmuir; 2013 Jan; 29(1):216-20. PubMed ID: 23227805 [TBL] [Abstract][Full Text] [Related]
4. Adsorbate interactions on the GaN(0001) surface and their effect on diffusion barriers and growth morphology. Chugh M; Ranganathan M Phys Chem Chem Phys; 2017 Jan; 19(3):2111-2123. PubMed ID: 28045144 [TBL] [Abstract][Full Text] [Related]
5. Wet chemical functionalization of III-V semiconductor surfaces: alkylation of gallium arsenide and gallium nitride by a Grignard reaction sequence. Peczonczyk SL; Mukherjee J; Carim AI; Maldonado S Langmuir; 2012 Mar; 28(10):4672-82. PubMed ID: 22372474 [TBL] [Abstract][Full Text] [Related]
6. Facility for low-temperature spin-polarized-scanning tunneling microscopy studies of magnetic/spintronic materials prepared in situ by nitride molecular beam epitaxy. Lin W; Foley A; Alam K; Wang K; Liu Y; Chen T; Pak J; Smith AR Rev Sci Instrum; 2014 Apr; 85(4):043702. PubMed ID: 24784613 [TBL] [Abstract][Full Text] [Related]
7. Role of Ga Surface Diffusion in the Elongation Mechanism and Optical Properties of Catalyst-Free GaN Nanowires Grown by Molecular Beam Epitaxy. Gruart M; Jacopin G; Daudin B Nano Lett; 2019 Jul; 19(7):4250-4256. PubMed ID: 31241343 [TBL] [Abstract][Full Text] [Related]
8. Lattice Polarity Manipulation of Quasi-vdW Epitaxial GaN Films on Graphene Through Interface Atomic Configuration. Liu F; Wang T; Zhang Z; Shen T; Rong X; Sheng B; Yang L; Li D; Wei J; Sheng S; Li X; Chen Z; Tao R; Yuan Y; Yang X; Xu F; Zhang J; Liu K; Li XZ; Shen B; Wang X Adv Mater; 2022 Feb; 34(5):e2106814. PubMed ID: 34757663 [TBL] [Abstract][Full Text] [Related]
9. Tracking the Effect of Adatom Electronegativity on Systematically Modified AlGaN/GaN Schottky Interfaces. Reiner M; Pietschnig R; Ostermaier C ACS Appl Mater Interfaces; 2015 Oct; 7(41):23124-31. PubMed ID: 26437208 [TBL] [Abstract][Full Text] [Related]
10. Nanotribological Properties of Ga- and N-Faced Bulk Gallium Nitride Surfaces Determined by Nanoscratch Experiments. Guo J; Qiu C; Zhu H; Wang Y Materials (Basel); 2019 Aug; 12(17):. PubMed ID: 31438492 [TBL] [Abstract][Full Text] [Related]
11. Adatom kinetics on and below the surface: the existence of a new diffusion channel. Neugebauer J; Zywietz TK; Scheffler M; Northrup JE; Chen H; Feenstra RM Phys Rev Lett; 2003 Feb; 90(5):056101. PubMed ID: 12633378 [TBL] [Abstract][Full Text] [Related]
12. Comprehensive Analysis of Metal Modulated Epitaxial GaN. Ahmad H; Motoki K; Clinton EA; Matthews CM; Engel Z; Doolittle WA ACS Appl Mater Interfaces; 2020 Aug; 12(33):37693-37712. PubMed ID: 32706570 [TBL] [Abstract][Full Text] [Related]
13. Differences in the nanoscale electrical properties of GaN films grown on sapphire and ZnO substrates by molecular beam epitaxy. Chen SH; Su CW; Chang LH; Tsai TH Microsc Res Tech; 2017 Jul; 80(7):731-736. PubMed ID: 28248446 [TBL] [Abstract][Full Text] [Related]
14. The influence of an AlN seeding layer on nucleation of self-assembled GaN nanowires on silicon substrates. Wu Y; Liu B; Li Z; Tao T; Xie Z; Wang K; Xiu X; Chen D; Lu H; Zhang R; Zheng Y Nanotechnology; 2020 Jan; 31(4):045604. PubMed ID: 31578003 [TBL] [Abstract][Full Text] [Related]
15. Characterization and density control of GaN nanodots on Si (111) by droplet epitaxy using plasma-assisted molecular beam epitaxy. Yu IS; Chang CP; Yang CP; Lin CT; Ma YR; Chen CC Nanoscale Res Lett; 2014; 9(1):682. PubMed ID: 25593560 [TBL] [Abstract][Full Text] [Related]
16. Surface Stability and Growth Kinetics of Compound Semiconductors: An Kangawa Y; Akiyama T; Ito T; Shiraishi K; Nakayama T Materials (Basel); 2013 Aug; 6(8):3309-3360. PubMed ID: 28811438 [TBL] [Abstract][Full Text] [Related]
17. Simulation studies on the evolution of gallium nitride on a liquid gallium surface under plasma bombardment. Vasquez MR; Flauta RE; Wada M Rev Sci Instrum; 2008 Feb; 79(2 Pt 2):02B910. PubMed ID: 18315225 [TBL] [Abstract][Full Text] [Related]
18. Atomic Layer Epitaxy of III-Nitrides: A Microscopic Model of Homoepitaxial Growth. Erwin SC; Lyons JL ACS Appl Mater Interfaces; 2020 Oct; 12(43):49245-49251. PubMed ID: 33064455 [TBL] [Abstract][Full Text] [Related]