These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

219 related articles for article (PubMed ID: 25658044)

  • 21. Highly gate-tuneable Rashba spin-orbit interaction in a gate-all-around InAs nanowire metal-oxide-semiconductor field-effect transistor.
    Takase K; Ashikawa Y; Zhang G; Tateno K; Sasaki S
    Sci Rep; 2017 Apr; 7(1):930. PubMed ID: 28424473
    [TBL] [Abstract][Full Text] [Related]  

  • 22. Anomalous Angle-Dependent Magnetotransport Properties of Single InAs Nanowires.
    Uredat P; Kodaira R; Horiguchi R; Hara S; Beyer A; Volz K; Klar PJ; Elm MT
    Nano Lett; 2020 Jan; 20(1):618-624. PubMed ID: 31829616
    [TBL] [Abstract][Full Text] [Related]  

  • 23. Electron transport in multigate In x Ga 1-x as nanowire FETs: from diffusive to ballistic regimes at room temperature.
    Thathachary AV; Agrawal N; Liu L; Datta S
    Nano Lett; 2014 Feb; 14(2):626-33. PubMed ID: 24382089
    [TBL] [Abstract][Full Text] [Related]  

  • 24. Conduction Band Offset and Polarization Effects in InAs Nanowire Polytype Junctions.
    Chen IJ; Lehmann S; Nilsson M; Kivisaari P; Linke H; Dick KA; Thelander C
    Nano Lett; 2017 Feb; 17(2):902-908. PubMed ID: 28002673
    [TBL] [Abstract][Full Text] [Related]  

  • 25. Impact of electrostatic doping on carrier concentration and mobility in InAs nanowires.
    Prete D; Demontis V; Zannier V; Rodriguez-Douton MJ; Guazzelli L; Beltram F; Sorba L; Rossella F
    Nanotechnology; 2021 Apr; 32(14):145204. PubMed ID: 33361570
    [TBL] [Abstract][Full Text] [Related]  

  • 26. Improved subthreshold slope in an InAs nanowire heterostructure field-effect transistor.
    Lind E; Persson AI; Samuelson L; Wernersson LE
    Nano Lett; 2006 Sep; 6(9):1842-6. PubMed ID: 16967988
    [TBL] [Abstract][Full Text] [Related]  

  • 27. InAs nanowire transistors as gas sensor and the response mechanism.
    Du J; Liang D; Tang H; Gao XP
    Nano Lett; 2009 Dec; 9(12):4348-51. PubMed ID: 19739664
    [TBL] [Abstract][Full Text] [Related]  

  • 28. InAs/InP radial nanowire heterostructures as high electron mobility devices.
    Jiang X; Xiong Q; Nam S; Qian F; Li Y; Lieber CM
    Nano Lett; 2007 Oct; 7(10):3214-8. PubMed ID: 17867718
    [TBL] [Abstract][Full Text] [Related]  

  • 29. Enhancing the electrical performance of InAs nanowire field-effect transistors by improving the surface and interface properties by coating with thermally oxidized Y
    Jiang Y; Shen R; Li T; Tian J; Li S; Tan HH; Jagadish C; Chen Q
    Nanoscale; 2022 Sep; 14(35):12830-12840. PubMed ID: 36039889
    [TBL] [Abstract][Full Text] [Related]  

  • 30. Formation and characterization of NixInAs/InAs nanowire heterostructures by solid source reaction.
    Chueh YL; Ford AC; Ho JC; Jacobson ZA; Fan Z; Chen CY; Chou LJ; Javey A
    Nano Lett; 2008 Dec; 8(12):4528-33. PubMed ID: 19367855
    [TBL] [Abstract][Full Text] [Related]  

  • 31. Gate-induced transition between metal-type and thermally activated transport in self-catalyzed MBE-grown InAs nanowires.
    Blömers C; Rieger T; Grap T; Raux M; Lepsa MI; Lüth H; Grützmacher D; Schäpers T
    Nanotechnology; 2013 Aug; 24(32):325201. PubMed ID: 23863215
    [TBL] [Abstract][Full Text] [Related]  

  • 32. Recent progress on infrared photodetectors based on InAs and InAsSb nanowires.
    Xu T; Wang H; Chen X; Luo M; Zhang L; Wang Y; Chen F; Shan C; Yu C
    Nanotechnology; 2020 May; 31(29):294004. PubMed ID: 32235081
    [TBL] [Abstract][Full Text] [Related]  

  • 33. Enhancement of transport properties in single ZnSe nanowire field-effect transistors.
    Wisniewski D; Byrne K; de Souza CF; Fernandes C; Ruda HE
    Nanotechnology; 2019 Feb; 30(5):054007. PubMed ID: 30517086
    [TBL] [Abstract][Full Text] [Related]  

  • 34. Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade.
    Memisevic E; Hellenbrand M; Lind E; Persson AR; Sant S; Schenk A; Svensson J; Wallenberg R; Wernersson LE
    Nano Lett; 2017 Jul; 17(7):4373-4380. PubMed ID: 28613894
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Direct observation of single-charge-detection capability of nanowire field-effect transistors.
    Salfi J; Savelyev IG; Blumin M; Nair SV; Ruda HE
    Nat Nanotechnol; 2010 Oct; 5(10):737-41. PubMed ID: 20852638
    [TBL] [Abstract][Full Text] [Related]  

  • 36. Giant thermovoltage in single InAs nanowire field-effect transistors.
    Roddaro S; Ercolani D; Safeen MA; Suomalainen S; Rossella F; Giazotto F; Sorba L; Beltram F
    Nano Lett; 2013 Aug; 13(8):3638-42. PubMed ID: 23869467
    [TBL] [Abstract][Full Text] [Related]  

  • 37. A III-V nanowire channel on silicon for high-performance vertical transistors.
    Tomioka K; Yoshimura M; Fukui T
    Nature; 2012 Aug; 488(7410):189-92. PubMed ID: 22854778
    [TBL] [Abstract][Full Text] [Related]  

  • 38. Crossover from Coulomb blockade to ballistic transport in InAs nanowire devices.
    Wang LB; Pan D; Huang GY; Zhao J; Kang N; Xu HQ
    Nanotechnology; 2019 Mar; 30(12):124001. PubMed ID: 30566928
    [TBL] [Abstract][Full Text] [Related]  

  • 39. Using Ultrathin Parylene Films as an Organic Gate Insulator in Nanowire Field-Effect Transistors.
    Gluschke JG; Seidl J; Lyttleton RW; Carrad DJ; Cochrane JW; Lehmann S; Samuelson L; Micolich AP
    Nano Lett; 2018 Jul; 18(7):4431-4439. PubMed ID: 29923725
    [TBL] [Abstract][Full Text] [Related]  

  • 40. Room temperature observation of quantum confinement in single InAs nanowires.
    Halpern E; Henning A; Shtrikman H; Rurali R; Cartoixà X; Rosenwaks Y
    Nano Lett; 2015 Jan; 15(1):481-5. PubMed ID: 25494683
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 11.