These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

399 related articles for article (PubMed ID: 25679286)

  • 1. Facile and environmentally friendly solution-processed aluminum oxide dielectric for low-temperature, high-performance oxide thin-film transistors.
    Xu W; Wang H; Xie F; Chen J; Cao H; Xu JB
    ACS Appl Mater Interfaces; 2015 Mar; 7(10):5803-10. PubMed ID: 25679286
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Fully solution-processed low-voltage aqueous In2O3 thin-film transistors using an ultrathin ZrO(x) dielectric.
    Liu A; Liu GX; Zhu HH; Xu F; Fortunato E; Martins R; Shan FK
    ACS Appl Mater Interfaces; 2014 Oct; 6(20):17364-9. PubMed ID: 25285983
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Lanthanum aluminum oxide thin-film dielectrics from aqueous solution.
    Plassmeyer PN; Archila K; Wager JF; Page CJ
    ACS Appl Mater Interfaces; 2015 Jan; 7(3):1678-84. PubMed ID: 25532438
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Boron-doped peroxo-zirconium oxide dielectric for high-performance, low-temperature, solution-processed indium oxide thin-film transistor.
    Park JH; Yoo YB; Lee KH; Jang WS; Oh JY; Chae SS; Lee HW; Han SW; Baik HK
    ACS Appl Mater Interfaces; 2013 Aug; 5(16):8067-75. PubMed ID: 23883390
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Solution-processable LaZrOx/SiO2 gate dielectric at low temperature of 180 °C for high-performance metal oxide field-effect transistors.
    Je SY; Son BG; Kim HG; Park MY; Do LM; Choi R; Jeong JK
    ACS Appl Mater Interfaces; 2014 Nov; 6(21):18693-703. PubMed ID: 25285585
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Aqueous Solution-Deposited Gallium Oxide Dielectric for Low-Temperature, Low-Operating-Voltage Indium Oxide Thin-Film Transistors: A Facile Route to Green Oxide Electronics.
    Xu W; Cao H; Liang L; Xu JB
    ACS Appl Mater Interfaces; 2015 Jul; 7(27):14720-5. PubMed ID: 26054237
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Low-temperature, high-performance solution-processed thin-film transistors with peroxo-zirconium oxide dielectric.
    Park JH; Yoo YB; Lee KH; Jang WS; Oh JY; Chae SS; Baik HK
    ACS Appl Mater Interfaces; 2013 Jan; 5(2):410-7. PubMed ID: 23267443
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Low-temperature, solution-processed ZrO2:B thin film: a bifunctional inorganic/organic interfacial glue for flexible thin-film transistors.
    Park JH; Oh JY; Han SW; Lee TI; Baik HK
    ACS Appl Mater Interfaces; 2015 Mar; 7(8):4494-503. PubMed ID: 25664940
    [TBL] [Abstract][Full Text] [Related]  

  • 9. High-Quality Solution-Processed Silicon Oxide Gate Dielectric Applied on Indium Oxide Based Thin-Film Transistors.
    Jaehnike F; Pham DV; Anselmann R; Bock C; Kunze U
    ACS Appl Mater Interfaces; 2015 Jul; 7(25):14011-7. PubMed ID: 26039187
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors.
    Kim J; Park CJ; Yi G; Choi MS; Park SK
    Materials (Basel); 2015 Oct; 8(10):6926-6934. PubMed ID: 28793608
    [TBL] [Abstract][Full Text] [Related]  

  • 11. ZnO-based thin film transistors employing aluminum titanate gate dielectrics deposited by spray pyrolysis at ambient air.
    Afouxenidis D; Mazzocco R; Vourlias G; Livesley PJ; Krier A; Milne WI; Kolosov O; Adamopoulos G
    ACS Appl Mater Interfaces; 2015 Apr; 7(13):7334-41. PubMed ID: 25774574
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Solution-Processed Rare-Earth Oxide Thin Films for Alternative Gate Dielectric Application.
    Zhuang J; Sun QJ; Zhou Y; Han ST; Zhou L; Yan Y; Peng H; Venkatesh S; Wu W; Li RK; Roy VA
    ACS Appl Mater Interfaces; 2016 Nov; 8(45):31128-31135. PubMed ID: 27762140
    [TBL] [Abstract][Full Text] [Related]  

  • 13. The Effect of Crystalline Aluminum Oxide on Device Performance of Solution-Processed Indium-Gallium-Zinc-Oxide Thin-Film Transistors Operating at Low Voltage.
    Park SJ; Yu BS; Ha TJ
    J Nanosci Nanotechnol; 2019 Oct; 19(10):6178-6182. PubMed ID: 31026932
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Atmospheric-pressure plasma treatment toward high-quality solution-processed aluminum oxide gate dielectric films in thin-film transistors.
    Park J; Cho NK; Lee SE; Lee EG; Lee J; Im C; Na HJ; Kim YS
    Nanotechnology; 2019 Dec; 30(49):495702. PubMed ID: 31476746
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Synergistic approach to high-performance oxide thin film transistors using a bilayer channel architecture.
    Yu X; Zhou N; Smith J; Lin H; Stallings K; Yu J; Marks TJ; Facchetti A
    ACS Appl Mater Interfaces; 2013 Aug; 5(16):7983-8. PubMed ID: 23876148
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Low-temperature, high-performance, solution-processed indium oxide thin-film transistors.
    Han SY; Herman GS; Chang CH
    J Am Chem Soc; 2011 Apr; 133(14):5166-9. PubMed ID: 21417268
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Wearable 1 V operating thin-film transistors with solution-processed metal-oxide semiconductor and dielectric films fabricated by deep ultra-violet photo annealing at low temperature.
    Yu BS; Jeon JY; Kang BC; Lee W; Kim YH; Ha TJ
    Sci Rep; 2019 Jun; 9(1):8416. PubMed ID: 31182751
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Ultraviolet Light-Densified Oxide-Organic Self-Assembled Dielectrics: Processing Thin-Film Transistors at Room Temperature.
    Huang W; Yu X; Zeng L; Wang B; Takai A; Di Carlo G; Bedzyk MJ; Marks TJ; Facchetti A
    ACS Appl Mater Interfaces; 2021 Jan; 13(2):3445-3453. PubMed ID: 33416304
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Homojunction solution-processed metal oxide thin-film transistors using passivation-induced channel definition.
    Kim JH; Rim YS; Kim HJ
    ACS Appl Mater Interfaces; 2014 Apr; 6(7):4819-22. PubMed ID: 24611468
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Aqueous inorganic inks for low-temperature fabrication of ZnO TFTs.
    Meyers ST; Anderson JT; Hung CM; Thompson J; Wager JF; Keszler DA
    J Am Chem Soc; 2008 Dec; 130(51):17603-9. PubMed ID: 19053193
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 20.