These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
2. Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers. Najmaei S; Liu Z; Zhou W; Zou X; Shi G; Lei S; Yakobson BI; Idrobo JC; Ajayan PM; Lou J Nat Mater; 2013 Aug; 12(8):754-9. PubMed ID: 23749265 [TBL] [Abstract][Full Text] [Related]
3. Transition metal chalcogenides: ultrathin inorganic materials with tunable electronic properties. Heine T Acc Chem Res; 2015 Jan; 48(1):65-72. PubMed ID: 25489917 [TBL] [Abstract][Full Text] [Related]
4. Continuously tunable electronic structure of transition metal dichalcogenides superlattices. Zhao YH; Yang F; Wang J; Guo H; Ji W Sci Rep; 2015 Feb; 5():8356. PubMed ID: 25677917 [TBL] [Abstract][Full Text] [Related]
5. Observing grain boundaries in CVD-grown monolayer transition metal dichalcogenides. Ly TH; Chiu MH; Li MY; Zhao J; Perello DJ; Cichocka MO; Oh HM; Chae SH; Jeong HY; Yao F; Li LJ; Lee YH ACS Nano; 2014 Nov; 8(11):11401-8. PubMed ID: 25343242 [TBL] [Abstract][Full Text] [Related]
6. Engineering Optical and Electronic Properties of WS2 by Varying the Number of Layers. Kim HC; Kim H; Lee JU; Lee HB; Choi DH; Lee JH; Lee WH; Jhang SH; Park BH; Cheong H; Lee SW; Chung HJ ACS Nano; 2015 Jul; 9(7):6854-60. PubMed ID: 26143940 [TBL] [Abstract][Full Text] [Related]
7. Flexible and stretchable thin-film transistors based on molybdenum disulphide. Pu J; Li LJ; Takenobu T Phys Chem Chem Phys; 2014 Aug; 16(29):14996-5006. PubMed ID: 24754038 [TBL] [Abstract][Full Text] [Related]
8. Misorientation-angle-dependent electrical transport across molybdenum disulfide grain boundaries. Ly TH; Perello DJ; Zhao J; Deng Q; Kim H; Han GH; Chae SH; Jeong HY; Lee YH Nat Commun; 2016 Jan; 7():10426. PubMed ID: 26813605 [TBL] [Abstract][Full Text] [Related]
9. High yield exfoliation of two-dimensional chalcogenides using sodium naphthalenide. Zheng J; Zhang H; Dong S; Liu Y; Nai CT; Shin HS; Jeong HY; Liu B; Loh KP Nat Commun; 2014; 5():2995. PubMed ID: 24384979 [TBL] [Abstract][Full Text] [Related]
10. Periodic Modulation of the Doping Level in Striped MoS₂ Superstructures. Zhou X; Shi J; Qi Y; Liu M; Ma D; Zhang Y; Ji Q; Zhang Z; Li C; Liu Z; Zhang Y ACS Nano; 2016 Mar; 10(3):3461-8. PubMed ID: 26913990 [TBL] [Abstract][Full Text] [Related]
11. Synthesis of uniform single layer WS Park J; Kim MS; Cha E; Kim J; Choi W Sci Rep; 2017 Nov; 7(1):16121. PubMed ID: 29170514 [TBL] [Abstract][Full Text] [Related]
12. Hopping transport through defect-induced localized states in molybdenum disulphide. Qiu H; Xu T; Wang Z; Ren W; Nan H; Ni Z; Chen Q; Yuan S; Miao F; Song F; Long G; Shi Y; Sun L; Wang J; Wang X Nat Commun; 2013; 4():2642. PubMed ID: 24149969 [TBL] [Abstract][Full Text] [Related]
13. Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition. Zhu W; Low T; Lee YH; Wang H; Farmer DB; Kong J; Xia F; Avouris P Nat Commun; 2014; 5():3087. PubMed ID: 24435154 [TBL] [Abstract][Full Text] [Related]
15. Lateral Growth of Composition Graded Atomic Layer MoS(2(1-x))Se(2x) Nanosheets. Li H; Zhang Q; Duan X; Wu X; Fan X; Zhu X; Zhuang X; Hu W; Zhou H; Pan A; Duan X J Am Chem Soc; 2015 Apr; 137(16):5284-7. PubMed ID: 25871953 [TBL] [Abstract][Full Text] [Related]
16. Visualizing band offsets and edge states in bilayer-monolayer transition metal dichalcogenides lateral heterojunction. Zhang C; Chen Y; Huang JK; Wu X; Li LJ; Yao W; Tersoff J; Shih CK Nat Commun; 2016 Jan; 6():10349. PubMed ID: 26778119 [TBL] [Abstract][Full Text] [Related]
17. Pressure-induced semiconducting to metallic transition in multilayered molybdenum disulphide. Nayak AP; Bhattacharyya S; Zhu J; Liu J; Wu X; Pandey T; Jin C; Singh AK; Akinwande D; Lin JF Nat Commun; 2014 May; 5():3731. PubMed ID: 24806118 [TBL] [Abstract][Full Text] [Related]
18. Visualization of Grain Structure and Boundaries of Polycrystalline Graphene and Two-Dimensional Materials by Epitaxial Growth of Transition Metal Dichalcogenides. Ago H; Fukamachi S; Endo H; Solís-Fernández P; Yunus RM; Uchida Y; Panchal V; Kazakova O; Tsuji M ACS Nano; 2016 Mar; 10(3):3233-40. PubMed ID: 26943750 [TBL] [Abstract][Full Text] [Related]
19. Atomic-Scale Spectroscopy of Gated Monolayer MoS2. Zhou X; Kang K; Xie S; Dadgar A; Monahan NR; Zhu XY; Park J; Pasupathy AN Nano Lett; 2016 May; 16(5):3148-54. PubMed ID: 27064662 [TBL] [Abstract][Full Text] [Related]
20. Effect of multilayer structure, stacking order and external electric field on the electrical properties of few-layer boron-phosphide. Chen X; Tan C; Yang Q; Meng R; Liang Q; Jiang J; Sun X; Yang DQ; Ren T Phys Chem Chem Phys; 2016 Jun; 18(24):16229-36. PubMed ID: 27250915 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]