These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
265 related articles for article (PubMed ID: 25805699)
21. Flexible and Transparent Artificial Synapse Devices Based on Thin-Film Transistors with Nanometer Thickness. Dai C; Huo C; Qi S; Dai M; Webster T; Xiao H Int J Nanomedicine; 2020; 15():8037-8043. PubMed ID: 33116516 [TBL] [Abstract][Full Text] [Related]
22. Aqueous Solution Processing of Combustible Precursor Compounds into Amorphous Indium Gallium Zinc Oxide (IGZO) Semiconductors for Thin Film Transistor Applications. Sanctis S; Hoffmann RC; Koslowski N; Foro S; Bruns M; Schneider JJ Chem Asian J; 2018 Dec; 13(24):3912-3919. PubMed ID: 30426698 [TBL] [Abstract][Full Text] [Related]
23. Effective mobility enhancement by using nanometer dot doping in amorphous IGZO thin-film transistors. Zan HW; Tsai WW; Chen CH; Tsai CC Adv Mater; 2011 Oct; 23(37):4237-42. PubMed ID: 21833994 [No Abstract] [Full Text] [Related]
24. Static and Dynamic Water Motion-Induced Instability in Oxide Thin-Film Transistors and Its Suppression by Using Low-k Fluoropolymer Passivation. Choi S; Jo JW; Kim J; Song S; Kim J; Park SK; Kim YH ACS Appl Mater Interfaces; 2017 Aug; 9(31):26161-26168. PubMed ID: 28730810 [TBL] [Abstract][Full Text] [Related]
25. Self-Assembled Nanodielectrics for Solution-Processed Top-Gate Amorphous IGZO Thin-Film Transistors. Stallings K; Smith J; Chen Y; Zeng L; Wang B; Di Carlo G; Bedzyk MJ; Facchetti A; Marks TJ ACS Appl Mater Interfaces; 2021 Apr; 13(13):15399-15408. PubMed ID: 33779161 [TBL] [Abstract][Full Text] [Related]
26. Water-Mediated Photochemical Treatments for Low-Temperature Passivation of Metal-Oxide Thin-Film Transistors. Heo JS; Jo JW; Kang J; Jeong CY; Jeong HY; Kim SK; Kim K; Kwon HI; Kim J; Kim YH; Kim MG; Park SK ACS Appl Mater Interfaces; 2016 Apr; 8(16):10403-12. PubMed ID: 27035796 [TBL] [Abstract][Full Text] [Related]
27. Low-temperature fabrication of an HfO Hong S; Park SP; Kim YG; Kang BH; Na JW; Kim HJ Sci Rep; 2017 Nov; 7(1):16265. PubMed ID: 29176568 [TBL] [Abstract][Full Text] [Related]
29. Large-scale complementary macroelectronics using hybrid integration of carbon nanotubes and IGZO thin-film transistors. Chen H; Cao Y; Zhang J; Zhou C Nat Commun; 2014 Jun; 5():4097. PubMed ID: 24923382 [TBL] [Abstract][Full Text] [Related]
30. The effect of annealing ambient on the characteristics of an indium-gallium-zinc oxide thin film transistor. Park S; Bang S; Lee S; Park J; Ko Y; Jeon H J Nanosci Nanotechnol; 2011 Jul; 11(7):6029-33. PubMed ID: 22121652 [TBL] [Abstract][Full Text] [Related]
31. InGaZnO semiconductor thin film fabricated using pulsed laser deposition. Chen J; Wang L; Su X; Kong L; Liu G; Zhang X Opt Express; 2010 Jan; 18(2):1398-405. PubMed ID: 20173967 [TBL] [Abstract][Full Text] [Related]
32. Plasma Polymerization Enabled Polymer/Metal-Oxide Hybrid Semiconductors for Wearable Electronics. Na JW; Kim HJ; Hong S; Kim HJ ACS Appl Mater Interfaces; 2018 Oct; 10(43):37207-37215. PubMed ID: 30338976 [TBL] [Abstract][Full Text] [Related]
34. Study of the Correlation between the Amorphous Indium-Gallium-Zinc Oxide Film Quality and the Thin-Film Transistor Performance. Hu S; Lu K; Ning H; Yao R; Gong Y; Pan Z; Guo C; Wang J; Pang C; Gong Z; Peng J Nanomaterials (Basel); 2021 Feb; 11(2):. PubMed ID: 33670767 [TBL] [Abstract][Full Text] [Related]
35. Preparation and Properties of Crystalline IGZO Thin Films. Wang X; Shen Z; Li J; Wu S Membranes (Basel); 2021 Feb; 11(2):. PubMed ID: 33672860 [TBL] [Abstract][Full Text] [Related]
36. Solution-Based Indium-Zinc Oxide/Indium-Gallium-Zinc Oxide Double-Channel Thin-Film Transistors with Incorporated Hydrogen Peroxide. Jeon W; Choi P; Park A; Lee D; Choi D; Lee S; Choi B J Nanosci Nanotechnol; 2020 Nov; 20(11):6643-6647. PubMed ID: 32604489 [TBL] [Abstract][Full Text] [Related]
37. Multi-project wafers for flexible thin-film electronics by independent foundries. Çeliker H; Dehaene W; Myny K Nature; 2024 May; 629(8011):335-340. PubMed ID: 38658759 [TBL] [Abstract][Full Text] [Related]
38. Influence of source and drain contacts on the properties of indium-gallium-zinc-oxide thin-film transistors based on amorphous carbon nanofilm as barrier layer. Luo D; Xu H; Zhao M; Li M; Xu M; Zou J; Tao H; Wang L; Peng J ACS Appl Mater Interfaces; 2015 Feb; 7(6):3633-40. PubMed ID: 25619280 [TBL] [Abstract][Full Text] [Related]
39. A Direct n Duan X; Lu C; Chuai X; Chen Q; Yang G; Geng D Micromachines (Basel); 2022 Apr; 13(5):. PubMed ID: 35630119 [TBL] [Abstract][Full Text] [Related]