616 related articles for article (PubMed ID: 25817336)
1. Sensing with Advanced Computing Technology: Fin Field-Effect Transistors with High-k Gate Stack on Bulk Silicon.
Rigante S; Scarbolo P; Wipf M; Stoop RL; Bedner K; Buitrago E; Bazigos A; Bouvet D; Calame M; Schönenberger C; Ionescu AM
ACS Nano; 2015 May; 9(5):4872-81. PubMed ID: 25817336
[TBL] [Abstract][Full Text] [Related]
2. Silicon Nanowire Field Effect Transistor Sensors with Minimal Sensor-to-Sensor Variations and Enhanced Sensing Characteristics.
Zafar S; D'Emic C; Jagtiani A; Kratschmer E; Miao X; Zhu Y; Mo R; Sosa N; Hamann H; Shahidi G; Riel H
ACS Nano; 2018 Jul; 12(7):6577-6587. PubMed ID: 29932634
[TBL] [Abstract][Full Text] [Related]
3. The Optimization and Analysis of a Triple-Fin Heterostructure-on-Insulator Fin Field-Effect Transistor with a Stacked High-k Configuration and 10 nm Channel Length.
Saha P; Sankar Dhar R; Nanda S; Kumar K; Alathbah M
Nanomaterials (Basel); 2023 Nov; 13(23):. PubMed ID: 38063707
[TBL] [Abstract][Full Text] [Related]
4. Optimization of pH sensing using silicon nanowire field effect transistors with HfO2 as the sensing surface.
Zafar S; D'Emic C; Afzali A; Fletcher B; Zhu Y; Ning T
Nanotechnology; 2011 Oct; 22(40):405501. PubMed ID: 21911920
[TBL] [Abstract][Full Text] [Related]
5. A Feasible Alternative to FDSOI and FinFET: Optimization of W/La
Mah SK; Ker PJ; Ahmad I; Zainul Abidin NF; Ali Gamel MM
Materials (Basel); 2021 Sep; 14(19):. PubMed ID: 34640118
[TBL] [Abstract][Full Text] [Related]
6. Subthreshold swing improvement in MoS
Nourbakhsh A; Zubair A; Joglekar S; Dresselhaus M; Palacios T
Nanoscale; 2017 May; 9(18):6122-6127. PubMed ID: 28447680
[TBL] [Abstract][Full Text] [Related]
7. Silicon nanowire ion sensitive field effect transistor with integrated Ag/AgCl electrode: pH sensing and noise characteristics.
Kim S; Rim T; Kim K; Lee U; Baek E; Lee H; Baek CK; Meyyappan M; Deen MJ; Lee JS
Analyst; 2011 Dec; 136(23):5012-6. PubMed ID: 22068238
[TBL] [Abstract][Full Text] [Related]
8. Novel 14-nm Scallop-Shaped FinFETs (S-FinFETs) on Bulk-Si Substrate.
Xu W; Yin H; Ma X; Hong P; Xu M; Meng L
Nanoscale Res Lett; 2015 Dec; 10(1):958. PubMed ID: 26055484
[TBL] [Abstract][Full Text] [Related]
9. Pixel-based biosensor for enhanced control: silicon nanowires monolithically integrated with field-effect transistors in fully depleted silicon on insulator technology.
Jayakumar G; Östling M
Nanotechnology; 2019 May; 30(22):225502. PubMed ID: 30721898
[TBL] [Abstract][Full Text] [Related]
10. Improved pH Sensitivity and Reliability for Extended Gate Field-Effect Transistor Sensors Using High-
Kang JW; Cho WJ
J Nanosci Nanotechnol; 2019 Mar; 19(3):1425-1431. PubMed ID: 30469200
[TBL] [Abstract][Full Text] [Related]
11. High-performance extended-gate ion-sensitive field-effect transistors with multi-gate structure for transparent, flexible, and wearable biosensors.
Jeon JH; Cho WJ
Sci Technol Adv Mater; 2020 Jun; 21(1):371-378. PubMed ID: 32939162
[TBL] [Abstract][Full Text] [Related]
12. Development and Analysis of a Three-Fin Trigate Q-FinFET for a 3 nm Technology Node with a Strained-Silicon Channel System.
Nanda S; Dhar RS; Awwad F; Hussein MI
Nanomaterials (Basel); 2023 May; 13(10):. PubMed ID: 37242078
[TBL] [Abstract][Full Text] [Related]
13. Single-electron effects in non-overlapped multiple-gate silicon-on-insulator metal-oxide-semiconductor field-effect transistors.
Lee W; Su P
Nanotechnology; 2009 Feb; 20(6):065202. PubMed ID: 19417374
[TBL] [Abstract][Full Text] [Related]
14. Design and Implementation of a pH Sensor for Micro Solution Based on Nanostructured Ion-Sensitive Field-Effect Transistor.
Wang Y; Yang M; Wu C
Sensors (Basel); 2020 Dec; 20(23):. PubMed ID: 33287342
[TBL] [Abstract][Full Text] [Related]
15. InGaAs FinFETs Directly Integrated on Silicon by Selective Growth in Oxide Cavities.
Convertino C; Zota C; Schmid H; Caimi D; Sousa M; Moselund K; Czornomaz L
Materials (Basel); 2018 Dec; 12(1):. PubMed ID: 30591676
[TBL] [Abstract][Full Text] [Related]
16. Silicon-on-Insulator Double-Gate Ion-Sensitive Field-Effect Transistors Using Flexible Paper Substrate-Based Extended Gate for Cost-Effective Sensor Applications.
Jeon JH; Cho WJ
J Nanosci Nanotechnol; 2019 Oct; 19(10):6668-6674. PubMed ID: 31027008
[TBL] [Abstract][Full Text] [Related]
17. Nonplanar Nanoscale Fin Field Effect Transistors on Textile, Paper, Wood, Stone, and Vinyl via Soft Material-Enabled Double-Transfer Printing.
Rojas JP; Torres Sevilla GA; Alfaraj N; Ghoneim MT; Kutbee AT; Sridharan A; Hussain MM
ACS Nano; 2015 May; 9(5):5255-63. PubMed ID: 25933370
[TBL] [Abstract][Full Text] [Related]
18. Multi-Wire Tri-Gate Silicon Nanowires Reaching Milli-pH Unit Resolution in One Micron Square Footprint.
Accastelli E; Scarbolo P; Ernst T; Palestri P; Selmi L; Guiducci C
Biosensors (Basel); 2016 Mar; 6(1):. PubMed ID: 26999232
[TBL] [Abstract][Full Text] [Related]
19. Reducing Off-State and Leakage Currents by Dielectric Permittivity-Graded Stacked Gate Oxides on Trigate FinFETs: A TCAD Study.
Ülkü A; Uçar E; Serin RB; Kaçar R; Artuç M; Menşur E; Oral AY
Micromachines (Basel); 2024 May; 15(6):. PubMed ID: 38930696
[TBL] [Abstract][Full Text] [Related]
20. Asymmetric Drain Extension Dual-kk Trigate Underlap FinFET Based on RF/Analog Circuit.
Han K; Qiao G; Deng Z; Zhang Y
Micromachines (Basel); 2017 Nov; 8(11):. PubMed ID: 30400520
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
