613 related articles for article (PubMed ID: 25817336)
21. High-κ Dielectric (HfO
Kang T; Park J; Jung H; Choi H; Lee SM; Lee N; Lee RG; Kim G; Kim SH; Kim HJ; Yang CW; Jeon J; Kim YH; Lee S
Adv Mater; 2024 Jun; 36(26):e2312747. PubMed ID: 38531112
[TBL] [Abstract][Full Text] [Related]
22. Sweat Biomarker Sensor Incorporating Picowatt, Three-Dimensional Extended Metal Gate Ion Sensitive Field Effect Transistors.
Zhang J; Rupakula M; Bellando F; Garcia Cordero E; Longo J; Wildhaber F; Herment G; Guérin H; Ionescu AM
ACS Sens; 2019 Aug; 4(8):2039-2047. PubMed ID: 31282146
[TBL] [Abstract][Full Text] [Related]
23. Trench FinFET Nanostructure with Advanced Ferroelectric Nanomaterial HfZrO
Yan SC; Wu CH; Sun CJ; Lin YW; Yao YJ; Wu YC
Nanomaterials (Basel); 2022 Jun; 12(13):. PubMed ID: 35807999
[TBL] [Abstract][Full Text] [Related]
24. Dynamic pH Sensor with Embedded Calibration Scheme by Advanced CMOS FinFET Technology.
Wang CP; Shen YC; Liou PC; Chueh YL; Chih YD; Chang J; Lin CJ; King YC
Sensors (Basel); 2019 Apr; 19(7):. PubMed ID: 30986913
[TBL] [Abstract][Full Text] [Related]
25. Solution-processable LaZrOx/SiO2 gate dielectric at low temperature of 180 °C for high-performance metal oxide field-effect transistors.
Je SY; Son BG; Kim HG; Park MY; Do LM; Choi R; Jeong JK
ACS Appl Mater Interfaces; 2014 Nov; 6(21):18693-703. PubMed ID: 25285585
[TBL] [Abstract][Full Text] [Related]
26. High performance tunnel field-effect transistor by gate and source engineering.
Huang R; Huang Q; Chen S; Wu C; Wang J; An X; Wang Y
Nanotechnology; 2014 Dec; 25(50):505201. PubMed ID: 25427134
[TBL] [Abstract][Full Text] [Related]
27. Improved sensing characteristics of dual-gate transistor sensor using silicon nanowire arrays defined by nanoimprint lithography.
Lim CM; Lee IK; Lee KJ; Oh YK; Shin YB; Cho WJ
Sci Technol Adv Mater; 2017; 18(1):17-25. PubMed ID: 28179955
[TBL] [Abstract][Full Text] [Related]
28. Black Phosphorus Based Field Effect Transistors with Simultaneously Achieved Near Ideal Subthreshold Swing and High Hole Mobility at Room Temperature.
Liu X; Ang KW; Yu W; He J; Feng X; Liu Q; Jiang H; Dan Tang ; Wen J; Lu Y; Liu W; Cao P; Han S; Wu J; Liu W; Wang X; Zhu D; He Z
Sci Rep; 2016 Apr; 6():24920. PubMed ID: 27102711
[TBL] [Abstract][Full Text] [Related]
29. Highly Sensitive and Selective Sodium Ion Sensor Based on Silicon Nanowire Dual Gate Field-Effect Transistor.
Cho SK; Cho WJ
Sensors (Basel); 2021 Jun; 21(12):. PubMed ID: 34205380
[TBL] [Abstract][Full Text] [Related]
30. High-k dielectric Al₂O₃ nanowire and nanoplate field effect sensors for improved pH sensing.
Reddy B; Dorvel BR; Go J; Nair PR; Elibol OH; Credo GM; Daniels JS; Chow EK; Su X; Varma M; Alam MA; Bashir R
Biomed Microdevices; 2011 Apr; 13(2):335-44. PubMed ID: 21203849
[TBL] [Abstract][Full Text] [Related]
31. Electrical Characteristics and pH Response of a Parylene-H Sensing Membrane in a Si-Nanonet Ion-Sensitive Field-Effect Transistor.
Jin B; Lee GY; Park C; Kim D; Choi W; Yoo JW; Pyun JC; Lee JS
Sensors (Basel); 2018 Nov; 18(11):. PubMed ID: 30424510
[TBL] [Abstract][Full Text] [Related]
32. Ge/Si nanowire heterostructures as high-performance field-effect transistors.
Xiang J; Lu W; Hu Y; Wu Y; Yan H; Lieber CM
Nature; 2006 May; 441(7092):489-93. PubMed ID: 16724062
[TBL] [Abstract][Full Text] [Related]
33. MoS
Liu X; Liang R; Gao G; Pan C; Jiang C; Xu Q; Luo J; Zou X; Yang Z; Liao L; Wang ZL
Adv Mater; 2018 Jul; 30(28):e1800932. PubMed ID: 29782679
[TBL] [Abstract][Full Text] [Related]
34. Enhanced biosensing resolution with foundry fabricated individually addressable dual-gated ISFETs.
Duarte-Guevara C; Lai FL; Cheng CW; Reddy B; Salm E; Swaminathan V; Tsui YK; Tuan HC; Kalnitsky A; Liu YS; Bashir R
Anal Chem; 2014 Aug; 86(16):8359-67. PubMed ID: 25072939
[TBL] [Abstract][Full Text] [Related]
35. High Aspect Ratio Fin-Ion Sensitive Field Effect Transistor: Compromises toward Better Electrochemical Biosensing.
Rollo S; Rani D; Leturcq R; Olthuis W; Pascual García C
Nano Lett; 2019 May; 19(5):2879-2887. PubMed ID: 31014066
[TBL] [Abstract][Full Text] [Related]
36. High performance horizontal gate-all-around silicon nanowire field-effect transistors.
Shirak O; Shtempluck O; Kotchtakov V; Bahir G; Yaish YE
Nanotechnology; 2012 Oct; 23(39):395202. PubMed ID: 22971804
[TBL] [Abstract][Full Text] [Related]
37. High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform.
Wang W; Lei D; Huang YC; Lee KH; Loke WK; Dong Y; Xu S; Tan CS; Wang H; Yoon SF; Gong X; Yeo YC
Opt Express; 2018 Apr; 26(8):10305-10314. PubMed ID: 29715969
[TBL] [Abstract][Full Text] [Related]
38. Enhancement-Mode Ambipolar Thin-Film Transistors and CMOS Logic Circuits using Bilayer Ga
Yuvaraja S; Khandelwal V; Krishna S; Lu Y; Liu Z; Kumar M; Tang X; Maciel García GI; Chettri D; Liao CH; Li X
ACS Appl Mater Interfaces; 2024 Feb; 16(5):6088-6097. PubMed ID: 38278516
[TBL] [Abstract][Full Text] [Related]
39. Ultrasensitive protein detection using lithographically defined Si multi-nanowire field effect transistors.
Tian R; Regonda S; Gao J; Liu Y; Hu W
Lab Chip; 2011 Jun; 11(11):1952-61. PubMed ID: 21505681
[TBL] [Abstract][Full Text] [Related]
40. Experimental study on the subthreshold swing of silicon nanowire transistors.
Zhang Y; Xiong Y; Yang X; Wang Y; Han W; Yang F
J Nanosci Nanotechnol; 2010 Nov; 10(11):7113-6. PubMed ID: 21137876
[TBL] [Abstract][Full Text] [Related]
[Previous] [Next] [New Search]
