142 related articles for article (PubMed ID: 25852381)
1. Fabrication and characterization of GaN-based light-emitting diodes without pre-activation of p-type GaN.
Hu XL; Wang H; Zhang XC
Nanoscale Res Lett; 2015; 10():85. PubMed ID: 25852381
[TBL] [Abstract][Full Text] [Related]
2. Reduction of graphene damages during the fabrication of InGaN/GaN light emitting diodes with graphene electrodes.
Joo K; Jerng SK; Kim YS; Kim B; Moon S; Moon D; Lee GD; Song YK; Chun SH; Yoon E
Nanotechnology; 2012 Oct; 23(42):425302. PubMed ID: 23036991
[TBL] [Abstract][Full Text] [Related]
3. GaN-based light-emitting diodes with graphene/indium tin oxide transparent layer.
Lai WC; Lin CN; Lai YC; Yu P; Chi GC; Chang SJ
Opt Express; 2014 Mar; 22 Suppl 2():A396-401. PubMed ID: 24922249
[TBL] [Abstract][Full Text] [Related]
4. Interfacial reactions of nano-structured Cu-doped indium oxide/indium tin oxide ohmic contacts to p-GaN.
Yoon YJ; Chae SW; Kim BK; Park MJ; Kwak JS
J Nanosci Nanotechnol; 2010 May; 10(5):3254-9. PubMed ID: 20358934
[TBL] [Abstract][Full Text] [Related]
5. Fabrication of conducting-filament-embedded indium tin oxide electrodes: application to lateral-type gallium nitride light-emitting diodes.
Kim HD; Kim KH; Kim SJ; Kim TG
Opt Express; 2015 Nov; 23(22):28775-83. PubMed ID: 26561146
[TBL] [Abstract][Full Text] [Related]
6. Enhancement of the light output efficiency and thermal stability of AlGaN-based deep-ultraviolet light-emitting diodes with Ag-nanodot-based p-contacts and an 8-nm p-GaN cap layer.
Pan S; Chen K; Guo Y; Liu Z; Zhou Y; Zhang R; Zheng Y
Opt Express; 2022 Dec; 30(25):44933-44942. PubMed ID: 36522906
[TBL] [Abstract][Full Text] [Related]
7. Opposite Behavior of Multilayer Graphene/ Indium-Tin-Oxide
Kim TK; Yoon YJ; Oh SK; Cha YJ; Hong IY; Cho MU; Hong CH; Choi HK; Kwak JS
J Nanosci Nanotechnol; 2018 Sep; 18(9):6106-6111. PubMed ID: 29677751
[TBL] [Abstract][Full Text] [Related]
8. Impact of Plasma Electron Flux on Plasma Damage-Free Sputtering of Ultrathin Tin-Doped Indium Oxide Contact Layer on
Son KJ; Kim TK; Cha YJ; Oh SK; You SJ; Ryou JH; Kwak JS
Adv Sci (Weinh); 2018 Feb; 5(2):1700637. PubMed ID: 29619312
[TBL] [Abstract][Full Text] [Related]
9. Indium Tin Oxide-Free Transparent Conductive Electrode for GaN-Based Ultraviolet Light-Emitting Diodes.
Kim JY; Jeon JH; Kwon MK
ACS Appl Mater Interfaces; 2015 Apr; 7(15):7945-50. PubMed ID: 25830932
[TBL] [Abstract][Full Text] [Related]
10. Highly Reflective Nonalloyed Ni/Ag/Pt Contact to Mg-Si Codoped p-GaN for Enhanced Efficiency of Light-Emitting Diodes.
Oh M; Kim H
J Nanosci Nanotechnol; 2015 Oct; 15(10):7531-6. PubMed ID: 26726365
[TBL] [Abstract][Full Text] [Related]
11. Reduced Graphene Oxide/Single-Walled Carbon Nanotube Hybrid Films Using Various p-Type Dopants and Their Application to GaN-Based Light-Emitting Diodes.
Lee BR; Kim TG
J Nanosci Nanotechnol; 2017 Jan; 17(1):454-59. PubMed ID: 29624304
[TBL] [Abstract][Full Text] [Related]
12. Large-scale patterned multi-layer graphene films as transparent conducting electrodes for GaN light-emitting diodes.
Jo G; Choe M; Cho CY; Kim JH; Park W; Lee S; Hong WK; Kim TW; Park SJ; Hong BH; Kahng YH; Lee T
Nanotechnology; 2010 Apr; 21(17):175201. PubMed ID: 20368676
[TBL] [Abstract][Full Text] [Related]
13. Fabrication of 380 nm ultra violet light emitting diodes on nano-patterned n-type GaN substrate.
Baek KS; Sadasivam KG; Lee YG; Song YH; Jeong T; Kim SH; Kim JK; Kim SH; Jeon SR; Lee JK
J Nanosci Nanotechnol; 2011 Aug; 11(8):7495-8. PubMed ID: 22103228
[TBL] [Abstract][Full Text] [Related]
14. Fabrication and characteristics of GaN-based light-emitting diodes with a reduced graphene oxide current-spreading layer.
Ryu BD; Han M; Han N; Park YJ; Ko KB; Lim TH; Chandramohan S; Cuong TV; Choi CJ; Cho J; Hong CH
ACS Appl Mater Interfaces; 2014 Dec; 6(24):22451-6. PubMed ID: 25411766
[TBL] [Abstract][Full Text] [Related]
15. Fabrication of Metal-Deposited Indium Tin Oxides: Its Applications to 385 nm Light-Emitting Diodes.
Kim MJ; Kim TG
ACS Appl Mater Interfaces; 2016 Mar; 8(8):5453-7. PubMed ID: 26859604
[TBL] [Abstract][Full Text] [Related]
16. Light-extraction enhancement of GaN-based 395 nm flip-chip light-emitting diodes by an Al-doped ITO transparent conductive electrode.
Xu J; Zhang W; Peng M; Dai J; Chen C
Opt Lett; 2018 Jun; 43(11):2684-2687. PubMed ID: 29856393
[TBL] [Abstract][Full Text] [Related]
17. 395 nm GaN-based near-ultraviolet light-emitting diodes on Si substrates with a high wall-plug efficiency of 52.0%@350 mA.
Li Y; Lan J; Wang W; Zheng Y; Xie W; Tang X; Kong D; Xia Y; Lan Z; Li R; He X; Li G
Opt Express; 2019 Mar; 27(5):7447-7457. PubMed ID: 30876308
[TBL] [Abstract][Full Text] [Related]
18. Nano-imprinting of refractive-index-matched indium tin oxide sol-gel in light-emitting diodes for eliminating total internal reflection.
Kim S; Yoo CJ; Park JY; Baek S; Cho WS; Lee JL
RSC Adv; 2018 Nov; 8(65):37021-37027. PubMed ID: 35557782
[TBL] [Abstract][Full Text] [Related]
19. Substrate-Free InGaN/GaN Nanowire Light-Emitting Diodes.
Neplokh V; Messanvi A; Zhang H; Julien FH; Babichev A; Eymery J; Durand C; Tchernycheva M
Nanoscale Res Lett; 2015 Dec; 10(1):447. PubMed ID: 26577391
[TBL] [Abstract][Full Text] [Related]
20. Thermal behavior of AlGaN-based deep-UV LEDs.
Lin SH; Tseng MC; Horng RH; Lai S; Peng KW; Shen MC; Wuu DS; Lien SY; Kuo HC; Chen Z; Wu T
Opt Express; 2022 May; 30(10):16827-16836. PubMed ID: 36221517
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
