142 related articles for article (PubMed ID: 25852381)
21. Nano-scale SiO2 patterned n-type GaN substrate for 380 nm ultra violet light emitting diodes.
Jo MS; Seo HW; Tawfik WZ; Yang SB; Lee JJ; Ryu SW; Ha JS; Jeon SR; Cui H; Park SH; Lee JK
J Nanosci Nanotechnol; 2014 Aug; 14(8):6108-11. PubMed ID: 25936066
[TBL] [Abstract][Full Text] [Related]
22. Demonstration of enhanced continuous-wave operation of blue laser diodes on a semipolar 202¯1¯ GaN substrate using indium-tin-oxide/thin-p-GaN cladding layers.
Mehari S; Cohen DA; Becerra DL; Nakamura S; DenBaars SP
Opt Express; 2018 Jan; 26(2):1564-1572. PubMed ID: 29402030
[TBL] [Abstract][Full Text] [Related]
23. Glass-Based Transparent Conductive Electrode: Its Application to Visible-to-Ultraviolet Light-Emitting Diodes.
Lee TH; Kim KH; Lee BR; Park JH; Schubert EF; Kim TG
ACS Appl Mater Interfaces; 2016 Dec; 8(51):35668-35677. PubMed ID: 27990816
[TBL] [Abstract][Full Text] [Related]
24. Origin of the Electroluminescence from Annealed-ZnO/GaN Heterojunction Light-Emitting Diodes.
Hsu KC; Hsiao WH; Lee CT; Chen YT; Liu DS
Materials (Basel); 2015 Nov; 8(11):7745-7756. PubMed ID: 28793675
[TBL] [Abstract][Full Text] [Related]
25. Improved light extraction efficiency of InGaN-based multi-quantum well light emitting diodes by using a single die growth.
Park MJ; Kwon KW; Kim YH; Park SH; Kwak JS
J Nanosci Nanotechnol; 2011 May; 11(5):4484-7. PubMed ID: 21780482
[TBL] [Abstract][Full Text] [Related]
26. Reduced Graphene Oxide/Single-Walled Carbon Nanotube Hybrid Film Using Various p-Type Dopants and Its Application to GaN-Based Light-Emitting Diodes.
Lee BR; Kim TG
J Nanosci Nanotechnol; 2016 Jun; 16(6):6203-8. PubMed ID: 27427691
[TBL] [Abstract][Full Text] [Related]
27. Fabrication of a nano-cone array on a p-GaN surface for enhanced light extraction efficiency from GaN-based tunable wavelength LEDs.
Soh CB; Wang B; Chua SJ; Lin VK; Tan RJ; Tripathy S
Nanotechnology; 2008 Oct; 19(40):405303. PubMed ID: 21832613
[TBL] [Abstract][Full Text] [Related]
28. Light-emitting diodes with surface gallium nitride p-n homojunction structure formed by selective area regrowth.
Lee ML; Wang SS; Yeh YH; Liao PH; Sheu JK
Sci Rep; 2019 Mar; 9(1):3243. PubMed ID: 30824803
[TBL] [Abstract][Full Text] [Related]
29. Analysis of light extraction efficiency enhancement for thin-film-flip-chip InGaN quantum wells light-emitting diodes with GaN micro-domes.
Zhao P; Zhao H
Opt Express; 2012 Sep; 20 Suppl 5():A765-76. PubMed ID: 23037543
[TBL] [Abstract][Full Text] [Related]
30. High-efficiency GaN-based light-emitting diodes fabricated with identical Ag contact formed on both n- and p-layers.
Oh M; Kim H
Opt Express; 2013 Sep; 21(18):20857-62. PubMed ID: 24103958
[TBL] [Abstract][Full Text] [Related]
31. Highly reliable Ag/Zn/Ag ohmic reflector for high-power GaN-based vertical light-emitting diode.
Yum WS; Jeon JW; Sung JS; Seong TY
Opt Express; 2012 Aug; 20(17):19194-9. PubMed ID: 23038560
[TBL] [Abstract][Full Text] [Related]
32. Vertical InGaN light-emitting diodes with a sapphire-face-up structure.
Yang YC; Sheu JK; Lee ML; Tu SJ; Huang FW; Lai WC; Hon S; Ko TK
Opt Express; 2012 Jan; 20(1):A119-24. PubMed ID: 22379672
[TBL] [Abstract][Full Text] [Related]
33. Electroluminescence of ordered ZnO nanorod array/p-GaN light-emitting diodes with graphene current spreading layer.
Dong JJ; Hao HY; Xing J; Fan ZJ; Zhang ZL
Nanoscale Res Lett; 2014; 9(1):630. PubMed ID: 25489284
[TBL] [Abstract][Full Text] [Related]
34. The fabrication of white light-emitting diodes using the n-ZnO/NiO/p-GaN heterojunction with enhanced luminescence.
Abbasi MA; Ibupoto ZH; Hussain M; Nur O; Willander M
Nanoscale Res Lett; 2013 Jul; 8(1):320. PubMed ID: 23849302
[TBL] [Abstract][Full Text] [Related]
35. Effect of the thickness of undoped GaN interlayers between multiple quantum wells and the p-doped layer on the performance of GaN light-emitting diodes.
Lu T; Li S; Zhang K; Liu C; Yin Y; Wu L; Wang H; Yang X; Xiao G; Zhou Y
Opt Express; 2011 Sep; 19(19):18319-23. PubMed ID: 21935200
[TBL] [Abstract][Full Text] [Related]
36. Enhancement of light output power of GaN-based light-emitting diodes with photonic quasi-crystal patterned on p-GaN surface and n-side sidewall roughing.
Lai FI; Yang JF
Nanoscale Res Lett; 2013 May; 8(1):244. PubMed ID: 23683526
[TBL] [Abstract][Full Text] [Related]
37. Inhomogeneous carrier transport at contact/GaN interfaces and thermal instability of vertical light-emitting diodes.
Choi Y; Jung E; Kim Y; Oh S; Yoo MC; Kim H
ACS Appl Mater Interfaces; 2014 Nov; 6(21):18673-82. PubMed ID: 25302936
[TBL] [Abstract][Full Text] [Related]
38. Highly reliable Ti-based ohmic contact to N-polar n-type GaN for vertical-geometry light-emitting diodes by using a Ta barrier layer.
Park JS; Han J; Seong TY
Opt Express; 2014 May; 22 Suppl 3():A759-64. PubMed ID: 24922383
[TBL] [Abstract][Full Text] [Related]
39. Preparation of a Periodic Polystyrene Nanosphere Array Using the Dip-Drop Method with Post-deposition Etching and Its Application of Improving Light Extraction Efficiency of InGaN/GaN LEDs.
Lei PH; Yang CD; Yang YS; Lin JH
Nanoscale Res Lett; 2018 Jun; 13(1):180. PubMed ID: 29904885
[TBL] [Abstract][Full Text] [Related]
40. Nano-patterned dual-layer ITO electrode of high brightness blue light emitting diodes using maskless wet etching.
Oh S; Su PC; Yoon YJ; Cho S; Oh JH; Seong TY; Kim KK
Opt Express; 2013 Nov; 21 Suppl 6():A970-6. PubMed ID: 24514938
[TBL] [Abstract][Full Text] [Related]
[Previous] [Next] [New Search]
