226 related articles for article (PubMed ID: 25852387)
1. The function of a 60-nm-thick AlN buffer layer in n-ZnO/AlN/p-Si(111).
Wang W; Chen C; Zhang G; Wang T; Wu H; Liu Y; Liu C
Nanoscale Res Lett; 2015; 10():91. PubMed ID: 25852387
[TBL] [Abstract][Full Text] [Related]
2. Interface control for pure ultraviolet electroluminescence from nano-ZnO-based heterojunction devices.
You D; Xu C; Qin F; Zhu Z; Manohari AG; Xu W; Zhao J; Liu W
Sci Bull (Beijing); 2018 Jan; 63(1):38-45. PubMed ID: 36658916
[TBL] [Abstract][Full Text] [Related]
3. Improved photoelectrical properties of n-ZnO/p-Si heterojunction by inserting an optimized thin Al₂O₃ buffer layer.
Lu HL; Gu YZ; Zhang Y; Liu XY; Wang PF; Sun QQ; Ding SJ; Zhang DW
Opt Express; 2014 Sep; 22(18):22184-9. PubMed ID: 25321593
[TBL] [Abstract][Full Text] [Related]
4. Growth and properties of aligned ZnO nanowires and their applications to n-ZnO/p-Si heterojunction diodes.
Al-Heniti SH
J Nanosci Nanotechnol; 2010 Oct; 10(10):6606-11. PubMed ID: 21137769
[TBL] [Abstract][Full Text] [Related]
5. Effects of thermal annealing in oxygen plasma for buffer layers on properties of ZnO thin films.
Kim GS; Kim MS; Choi HY; Cho MY; Yim KG; Leem JY
J Nanosci Nanotechnol; 2011 Oct; 11(10):8859-63. PubMed ID: 22400272
[TBL] [Abstract][Full Text] [Related]
6. Porous Silicon-Zinc Oxide Nanocomposites Prepared by Atomic Layer Deposition for Biophotonic Applications.
Pavlenko M; Myndrul V; Gottardi G; Coy E; Jancelewicz M; Iatsunskyi I
Materials (Basel); 2020 Apr; 13(8):. PubMed ID: 32344562
[TBL] [Abstract][Full Text] [Related]
7. Structural Characterization of Al
Núñez-Cascajero A; Naranjo FB; de la Mata M; Molina SI
Materials (Basel); 2021 Apr; 14(9):. PubMed ID: 33925320
[TBL] [Abstract][Full Text] [Related]
8. High-Performance Solar-Blind Ultraviolet Photodetectors Based on β-Ga
Gao C; Wang Y; Fu S; Xia D; Han Y; Ma J; Xu H; Li B; Shen A; Liu Y
ACS Appl Mater Interfaces; 2023 Aug; 15(32):38612-38622. PubMed ID: 37531140
[TBL] [Abstract][Full Text] [Related]
9. Preparation of single crystalline AlN thin films on ZnO nanostructures by atomic layer deposition at low temperature.
Zhang Y; Tao JJ; Chen HY; Lu HL
Nanotechnology; 2021 Apr; 32(27):. PubMed ID: 33740776
[TBL] [Abstract][Full Text] [Related]
10. Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes.
Musolino M; Tahraoui A; Fernández-Garrido S; Brandt O; Trampert A; Geelhaar L; Riechert H
Nanotechnology; 2015 Feb; 26(8):085605. PubMed ID: 25656795
[TBL] [Abstract][Full Text] [Related]
11. Investigation of Energy Band at Atomic-Layer-Deposited ZnO/β-Ga
Sun SM; Liu WJ; Xiao YF; Huan YW; Liu H; Ding SJ; Zhang DW
Nanoscale Res Lett; 2018 Dec; 13(1):412. PubMed ID: 30584649
[TBL] [Abstract][Full Text] [Related]
12. (Mg,Mn)-dual doping synergism towards luminescence and electrical properties of ZnO/p-Si heterojunction diodes.
V S GK; M G M
RSC Adv; 2023 Oct; 13(46):32282-32295. PubMed ID: 37928854
[TBL] [Abstract][Full Text] [Related]
13. Enhancement of crystallinity and optical properties of bilayer TiO2/ZnO thin films prepared by atomic layer deposition.
Hussin R; Choy KL; Hou X
J Nanosci Nanotechnol; 2011 Sep; 11(9):8143-7. PubMed ID: 22097544
[TBL] [Abstract][Full Text] [Related]
14. Improved Performance of GaN-Based Light-Emitting Diodes Grown on Si (111) Substrates with NH
Kim SJ; Oh S; Lee KJ; Kim S; Kim KK
Micromachines (Basel); 2021 Apr; 12(4):. PubMed ID: 33916339
[TBL] [Abstract][Full Text] [Related]
15. n-ZnO nanorods/p+-Si (111) heterojunction light emitting diodes.
Tsai JK; Shih JH; Wu TC; Meen TH
Nanoscale Res Lett; 2012 Dec; 7(1):664. PubMed ID: 23216651
[TBL] [Abstract][Full Text] [Related]
16. Fabrication and properties of ZnO/GaN heterostructure nanocolumnar thin film on Si (111) substrate.
Wei X; Zhao R; Shao M; Xu X; Huang J
Nanoscale Res Lett; 2013 Feb; 8(1):112. PubMed ID: 23448090
[TBL] [Abstract][Full Text] [Related]
17. Zinc oxide epitaxial thin film deposited over carbon on various substrate by pulsed laser deposition technique.
Manikandan E; Moodley MK; Sinha Ray S; Panigrahi BK; Krishnan R; Padhy N; Nair KG; Tyagi AK
J Nanosci Nanotechnol; 2010 Sep; 10(9):5602-11. PubMed ID: 21133080
[TBL] [Abstract][Full Text] [Related]
18. Effects of Post Annealing Treatments on the Interfacial Chemical Properties and Band Alignment of AlN/Si Structure Prepared by Atomic Layer Deposition.
Sun L; Lu HL; Chen HY; Wang T; Ji XM; Liu WJ; Zhao D; Devi A; Ding SJ; Zhang DW
Nanoscale Res Lett; 2017 Dec; 12(1):102. PubMed ID: 28181165
[TBL] [Abstract][Full Text] [Related]
19. High-Temperature Atomic Layer Deposition of GaN on 1D Nanostructures.
Austin AJ; Echeverria E; Wagle P; Mainali P; Meyers D; Gupta AK; Sachan R; Prassana S; McIlroy DN
Nanomaterials (Basel); 2020 Dec; 10(12):. PubMed ID: 33291493
[TBL] [Abstract][Full Text] [Related]
20. Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition.
Seppänen H; Kim I; Etula J; Ubyivovk E; Bouravleuv A; Lipsanen H
Materials (Basel); 2019 Jan; 12(3):. PubMed ID: 30696077
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
