These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

226 related articles for article (PubMed ID: 25852387)

  • 21. Effect of Al Concentration on Structural, Optical and Electrical Properties of (Gd, Al) Co-Doped ZnO and Its n-ZnO/p-Si (1 0 0) Heterojunction Structures Prepared via Co-Sputtering Method.
    Raship NA; Tawil SNM; Nayan N; Ismail K
    Materials (Basel); 2023 Mar; 16(6):. PubMed ID: 36984272
    [TBL] [Abstract][Full Text] [Related]  

  • 22. Improved performance of organic light-emitting diodes fabricated on Al-doped ZnO anodes incorporating a homogeneous Al-doped ZnO buffer layer grown by atomic layer deposition.
    Choi YJ; Gong SC; Park CS; Lee HS; Jang JG; Chang HJ; Yeom GY; Park HH
    ACS Appl Mater Interfaces; 2013 May; 5(9):3650-5. PubMed ID: 23534435
    [TBL] [Abstract][Full Text] [Related]  

  • 23. Effects of the surface preparation and buffer layer on the morphology, electronic and optical properties of the GaN nanowires on Si.
    Bolshakov AD; Fedorov VV; Shugurov KY; Mozharov AM; Sapunov GA; Shtrom IV; Mukhin MS; Uvarov AV; Cirlin GE; Mukhin IS
    Nanotechnology; 2019 Sep; 30(39):395602. PubMed ID: 31234150
    [TBL] [Abstract][Full Text] [Related]  

  • 24. Structural and optical properties of self-assembled AlN nanowires grown on SiO
    Gačević Ž; Grandal J; Guo Q; Kirste R; Varela M; Sitar Z; Sánchez García MA
    Nanotechnology; 2021 May; 32(19):195601. PubMed ID: 33535196
    [TBL] [Abstract][Full Text] [Related]  

  • 25. Growth and characterization of textured well-faceted ZnO on planar Si(100), planar Si(111), and textured Si(100) substrates for solar cell applications.
    Tsai CY; Lai JD; Feng SW; Huang CJ; Chen CH; Yang FW; Wang HC; Tu LW
    Beilstein J Nanotechnol; 2017; 8():1939-1945. PubMed ID: 29046841
    [TBL] [Abstract][Full Text] [Related]  

  • 26. Nanostructured SnO2-ZnO heterojunction photocatalysts showing enhanced photocatalytic activity for the degradation of organic dyes.
    Uddin MT; Nicolas Y; Olivier C; Toupance T; Servant L; Müller MM; Kleebe HJ; Ziegler J; Jaegermann W
    Inorg Chem; 2012 Jul; 51(14):7764-73. PubMed ID: 22734686
    [TBL] [Abstract][Full Text] [Related]  

  • 27. Influence of homo buffer layer thickness on the quality of ZnO epilayers.
    Eid EA; Fouda AN
    Spectrochim Acta A Mol Biomol Spectrosc; 2015 Oct; 149():127-31. PubMed ID: 25950638
    [TBL] [Abstract][Full Text] [Related]  

  • 28. Thickness Dependence on Interfacial and Electrical Properties in Atomic Layer Deposited AlN on c-plane GaN.
    Kim H; Yoon HJ; Choi BJ
    Nanoscale Res Lett; 2018 Aug; 13(1):232. PubMed ID: 30097798
    [TBL] [Abstract][Full Text] [Related]  

  • 29. Novel AlN/Pt/ZnO Electrode for High Temperature SAW Sensors.
    Liu X; Peng B; Zhang W; Zhu J; Liu X; Wei M
    Materials (Basel); 2017 Jan; 10(1):. PubMed ID: 28772429
    [TBL] [Abstract][Full Text] [Related]  

  • 30. Band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterostructures measured by X-ray photoemission spectroscopy.
    Sang L; Zhu QS; Yang SY; Liu GP; Li HJ; Wei HY; Jiao CM; Liu SM; Wang ZG; Zhou XW; Mao W; Hao Y; Shen B
    Nanoscale Res Lett; 2014; 9(1):470. PubMed ID: 25258600
    [TBL] [Abstract][Full Text] [Related]  

  • 31. Amplified spontaneous emission from ZnO in n-ZnO/ZnO nanodots-SiO(2) composite/p-AlGaN heterojunction light-emitting diodes.
    Shih YT; Wu MK; Li WC; Kuan H; Yang JR; Shiojiri M; Chen MJ
    Nanotechnology; 2009 Apr; 20(16):165201. PubMed ID: 19420563
    [TBL] [Abstract][Full Text] [Related]  

  • 32. Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition.
    Schilirò E; Giannazzo F; Di Franco S; Greco G; Fiorenza P; Roccaforte F; Prystawko P; Kruszewski P; Leszczynski M; Cora I; Pécz B; Fogarassy Z; Lo Nigro R
    Nanomaterials (Basel); 2021 Dec; 11(12):. PubMed ID: 34947665
    [TBL] [Abstract][Full Text] [Related]  

  • 33. Significantly Enhanced Photoluminescence Performance of Ni
    Liu X; Li J
    Inorg Chem; 2020 Dec; 59(23):17184-17190. PubMed ID: 33201690
    [TBL] [Abstract][Full Text] [Related]  

  • 34. Band Offset Measurements in Atomic-Layer-Deposited Al
    Yan B; Liu S; Heng Y; Yang Y; Yu Y; Wen K
    Nanoscale Res Lett; 2017 Dec; 12(1):363. PubMed ID: 28532128
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Deep level defect correlated emission and Si diffusion in ZnO:Tb(3+) thin films prepared by pulsed laser deposition.
    Kumar V; Ntwaeaborwa OM; Swart HC
    J Colloid Interface Sci; 2016 Mar; 465():295-303. PubMed ID: 26688121
    [TBL] [Abstract][Full Text] [Related]  

  • 36. Toward controlling the Al
    Janowitz C; Mahmoodinezhad A; Kot M; Morales C; Naumann F; Plate P; Zoellner MH; Bärwolf F; Stolarek D; Wenger C; Henkel K; Flege JI
    Dalton Trans; 2022 Jun; 51(24):9291-9301. PubMed ID: 35670312
    [TBL] [Abstract][Full Text] [Related]  

  • 37. Photocatalytic activity and photocorrosion of atomic layer deposited ZnO ultrathin films for the degradation of methylene blue.
    Cao YQ; Chen J; Zhou H; Zhu L; Li X; Cao ZY; Wu D; Li AD
    Nanotechnology; 2015 Jan; 26(2):024002. PubMed ID: 25526542
    [TBL] [Abstract][Full Text] [Related]  

  • 38. High-Performance Ultraviolet Light-Emitting Diodes Using n-ZnO/p-hBN/p-GaN Contact Heterojunctions.
    Deng G; Zhang Y; Yu Y; Han X; Wang Y; Shi Z; Dong X; Zhang B; Du G; Liu Y
    ACS Appl Mater Interfaces; 2020 Feb; 12(5):6788-6792. PubMed ID: 31913014
    [TBL] [Abstract][Full Text] [Related]  

  • 39. Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations.
    Lee HP; Perozek J; Rosario LD; Bayram C
    Sci Rep; 2016 Nov; 6():37588. PubMed ID: 27869222
    [TBL] [Abstract][Full Text] [Related]  

  • 40. 395 nm GaN-based near-ultraviolet light-emitting diodes on Si substrates with a high wall-plug efficiency of 52.0%@350 mA.
    Li Y; Lan J; Wang W; Zheng Y; Xie W; Tang X; Kong D; Xia Y; Lan Z; Li R; He X; Li G
    Opt Express; 2019 Mar; 27(5):7447-7457. PubMed ID: 30876308
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 12.