These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
96 related articles for article (PubMed ID: 25884251)
1. The global anthropogenic gallium system: determinants of demand, supply and efficiency improvements. Løvik AN; Restrepo E; Müller DB Environ Sci Technol; 2015 May; 49(9):5704-12. PubMed ID: 25884251 [TBL] [Abstract][Full Text] [Related]
2. Challenges for critical raw material recovery from WEEE - The case study of gallium. Ueberschaar M; Otto SJ; Rotter VS Waste Manag; 2017 Feb; 60():534-545. PubMed ID: 28089397 [TBL] [Abstract][Full Text] [Related]
3. Byproduct Metal Availability Constrained by Dynamics of Carrier Metal Cycle: The Gallium-Aluminum Example. Løvik AN; Restrepo E; Müller DB Environ Sci Technol; 2016 Aug; 50(16):8453-61. PubMed ID: 27400378 [TBL] [Abstract][Full Text] [Related]
4. China Factor: Exploring the Byproduct and Host Metal Dynamics for Gallium-Aluminum in a Global Green Transition. Song H; Wang C; Sen B; Liu G Environ Sci Technol; 2022 Feb; 56(4):2699-2708. PubMed ID: 35077180 [TBL] [Abstract][Full Text] [Related]
5. Forecasting the temporal stock generation and recycling potential of metals towards a sustainable future: The case of gallium in China. Eheliyagoda D; Zeng X; Wang Z; Albalghiti E; Li J Sci Total Environ; 2019 Nov; 689():332-340. PubMed ID: 31277001 [TBL] [Abstract][Full Text] [Related]
7. Strain engineering for the solution of efficiency droop in InGaN/GaN light-emitting diodes. Son JH; Lee JL Opt Express; 2010 Mar; 18(6):5466-71. PubMed ID: 20389563 [TBL] [Abstract][Full Text] [Related]
8. Laser-induced periodic structures for light extraction efficiency enhancement of GaN-based light emitting diodes. Chen JT; Lai WC; Kao YJ; Yang YY; Sheu JK Opt Express; 2012 Feb; 20(5):5689-95. PubMed ID: 22418376 [TBL] [Abstract][Full Text] [Related]
9. High-efficiency, microscale GaN light-emitting diodes and their thermal properties on unusual substrates. Kim TI; Jung YH; Song J; Kim D; Li Y; Kim HS; Song IS; Wierer JJ; Pao HA; Huang Y; Rogers JA Small; 2012 Jun; 8(11):1643-9. PubMed ID: 22467223 [TBL] [Abstract][Full Text] [Related]
10. Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors. Lee YJ; Yang ZP; Chen PG; Hsieh YA; Yao YC; Liao MH; Lee MH; Wang MT; Hwang JM Opt Express; 2014 Oct; 22 Suppl 6():A1589-95. PubMed ID: 25607316 [TBL] [Abstract][Full Text] [Related]
11. Room temperature polariton light emitting diode with integrated tunnel junction. Brodbeck S; Jahn JP; Rahimi-Iman A; Fischer J; Amthor M; Reitzenstein S; Kamp M; Schneider C; Höfling S Opt Express; 2013 Dec; 21(25):31098-104. PubMed ID: 24514684 [TBL] [Abstract][Full Text] [Related]
12. A p-type-doped quantum dot superluminescent LED with broadband and flat-topped emission spectra obtained by post-growth intermixing under a GaAs proximity cap. Zhang ZY; Jiang Q; Luxmoore IJ; Hogg RA Nanotechnology; 2009 Feb; 20(5):055204. PubMed ID: 19417341 [TBL] [Abstract][Full Text] [Related]
13. High-efficiency vertical GaN slab light-emitting diodes using self-coherent directional emitters. Kim SK; Lee JW; Ee HS; Moon YT; Kwon SH; Kwon H; Park HG Opt Express; 2010 May; 18(11):11025-32. PubMed ID: 20588958 [TBL] [Abstract][Full Text] [Related]
14. Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer. Lin BC; Chen KJ; Wang CH; Chiu CH; Lan YP; Lin CC; Lee PT; Shih MH; Kuo YK; Kuo HC Opt Express; 2014 Jan; 22(1):463-9. PubMed ID: 24515006 [TBL] [Abstract][Full Text] [Related]
15. High performance of InGaN light-emitting diodes by air-gap/GaN distributed Bragg reflectors. Ryu JH; Kim HY; Kim HK; Katharria YS; Han N; Kang JH; Park YJ; Han M; Ryu BD; Ko KB; Suh EK; Hong CH Opt Express; 2012 Apr; 20(9):9999-10003. PubMed ID: 22535092 [TBL] [Abstract][Full Text] [Related]
16. Looking Down Under for a Circular Economy of Indium. Werner TT; Ciacci L; Mudd GM; Reck BK; Northey SA Environ Sci Technol; 2018 Feb; 52(4):2055-2062. PubMed ID: 29298484 [TBL] [Abstract][Full Text] [Related]
17. Extraction of recombination coefficients and internal quantum efficiency of GaN-based light emitting diodes considering effective volume of active region. Kim G; Kim JH; Park EH; Kang D; Park BG Opt Express; 2014 Jan; 22(2):1235-42. PubMed ID: 24515129 [TBL] [Abstract][Full Text] [Related]
18. Novel recycle technology for recovering rare metals (Ga, In) from waste light-emitting diodes. Zhan L; Xia F; Ye Q; Xiang X; Xie B J Hazard Mater; 2015 Dec; 299():388-94. PubMed ID: 26150281 [TBL] [Abstract][Full Text] [Related]
19. Characterization of a mammographic system based on single photon counting pixel arrays coupled to GaAs x-ray detectors. Amendolia SR; Bisogni MG; Delogu P; Fantacci ME; Paternoster G; Rosso V; Stefanini A Med Phys; 2009 Apr; 36(4):1330-9. PubMed ID: 19472640 [TBL] [Abstract][Full Text] [Related]
20. Thermal conductivity of GaAs/AlAs superlattices and the puzzle of interfaces. Termentzidis K; Chantrenne P; Duquesne JY; Saci A J Phys Condens Matter; 2010 Dec; 22(47):475001. PubMed ID: 21386620 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]