These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

263 related articles for article (PubMed ID: 25897303)

  • 1. Silicon diffusion control in atomic-layer-deposited Al2O3/La2O3/Al2O3 gate stacks using an Al2O3 barrier layer.
    Wang X; Liu HX; Fei CX; Yin SY; Fan XJ
    Nanoscale Res Lett; 2015; 10():141. PubMed ID: 25897303
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Modulating the interface quality and electrical properties of HfTiO/InGaAs gate stack by atomic-layer-deposition-derived Al₂O₃ passivation layer.
    He G; Gao J; Chen H; Cui J; Sun Z; Chen X
    ACS Appl Mater Interfaces; 2014 Dec; 6(24):22013-25. PubMed ID: 25471009
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Impacts of Annealing Conditions on the Flat Band Voltage of Alternate La2O3/Al2O3 Multilayer Stack Structures.
    Feng XY; Liu HX; Wang X; Zhao L; Fei CX; Liu HL
    Nanoscale Res Lett; 2016 Dec; 11(1):394. PubMed ID: 27620192
    [TBL] [Abstract][Full Text] [Related]  

  • 4. The Study of Electrical Properties for Multilayer La
    Feng XY; Liu HX; Wang X; Zhao L; Fei CX; Liu HL
    Nanoscale Res Lett; 2017 Dec; 12(1):230. PubMed ID: 28359141
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Interface Optimization and Performance Enhancement of Er
    Wu Q; Yu Q; He G; Wang W; Lu J; Yao B; Liu S; Fang Z
    Nanomaterials (Basel); 2023 May; 13(11):. PubMed ID: 37299643
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Electrical properties and thermal stability in stack structure of HfO
    Baik M; Kang HK; Kang YS; Jeong KS; An Y; Choi S; Kim H; Song JD; Cho MH
    Sci Rep; 2017 Sep; 7(1):11337. PubMed ID: 28900097
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks.
    Xiang Y; Zhou C; Jia E; Wang W
    Nanoscale Res Lett; 2015; 10():137. PubMed ID: 25852428
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Interface Chemistry and Dielectric Optimization of TMA-Passivated high-
    Wang D; He G; Hao L; Qiao L; Fang Z; Liu J
    ACS Appl Mater Interfaces; 2020 Jun; 12(22):25390-25399. PubMed ID: 32383855
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Improving the electrical properties of lanthanum silicate films on ge metal oxide semiconductor capacitors by adopting interfacial barrier and capping layers.
    Choi YJ; Lim H; Lee S; Suh S; Kim JR; Jung HS; Park S; Lee JH; Kim SG; Hwang CS; Kim H
    ACS Appl Mater Interfaces; 2014 May; 6(10):7885-94. PubMed ID: 24780393
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Interfacial Cation-Defect Charge Dipoles in Stacked TiO
    Zhang L; Janotti A; Meng AC; Tang K; Van de Walle CG; McIntyre PC
    ACS Appl Mater Interfaces; 2018 Feb; 10(6):5140-5146. PubMed ID: 29369616
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Structural Properties Characterized by the Film Thickness and Annealing Temperature for La
    Wang X; Liu H; Zhao L; Fei C; Feng X; Chen S; Wang Y
    Nanoscale Res Lett; 2017 Dec; 12(1):233. PubMed ID: 28359142
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Charge-trapping characteristics of Al2O3/Cu/Al2O3 nanolaminate structures prepared through atomic layer deposition.
    Lee BK; Kim SH; Park BK; Lee SS; Hwang JH; Chung TM; Lee YK; Kim CG; An KS
    J Nanosci Nanotechnol; 2011 Jul; 11(7):5887-91. PubMed ID: 22121626
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Atomic Layer Deposition of Ultrathin La
    Fan J; Shi Y; Liu H; Wang S; Luan L; Duan L; Zhang Y; Wei X
    Materials (Basel); 2022 Feb; 15(5):. PubMed ID: 35269024
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Electrical Properties and Interfacial Issues of HfO
    Zhao L; Liu H; Wang X; Wang Y; Wang S
    Nanomaterials (Basel); 2019 May; 9(5):. PubMed ID: 31060261
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Structural evolution and the control of defects in atomic layer deposited HfO2-Al2O3 stacked films on GaAs.
    Kang YS; Kim DK; Jeong KS; Cho MH; Kim CY; Chung KB; Kim H; Kim DC
    ACS Appl Mater Interfaces; 2013 Mar; 5(6):1982-9. PubMed ID: 23438318
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Interface Electrical Properties of Al
    Fisichella G; Schilirò E; Di Franco S; Fiorenza P; Lo Nigro R; Roccaforte F; Ravesi S; Giannazzo F
    ACS Appl Mater Interfaces; 2017 Mar; 9(8):7761-7771. PubMed ID: 28135063
    [TBL] [Abstract][Full Text] [Related]  

  • 17. High-Performance Indium Gallium Tin Oxide Transistors with an Al
    Choi CH; Kim T; Ueda S; Shiah YS; Hosono H; Kim J; Jeong JK
    ACS Appl Mater Interfaces; 2021 Jun; 13(24):28451-28461. PubMed ID: 34111928
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Al
    Schilirò E; Fiorenza P; Lo Nigro R; Galizia B; Greco G; Di Franco S; Bongiorno C; La Via F; Giannazzo F; Roccaforte F
    Materials (Basel); 2023 Aug; 16(16):. PubMed ID: 37629929
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Extensive Analysis on the Effects of Post-Deposition Annealing for ALD-Deposited Al
    Bhattacharjee A; Kim TW
    Materials (Basel); 2021 Jun; 14(12):. PubMed ID: 34208573
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Interface Optimization and Transport Modulation of Sm
    Lu J; He G; Yan J; Dai Z; Zheng G; Jiang S; Qiao L; Gao Q; Fang Z
    Nanomaterials (Basel); 2021 Dec; 11(12):. PubMed ID: 34947792
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 14.