314 related articles for article (PubMed ID: 25958488)
21. A Novel GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor Featuring Vertical Gate Structure.
Sun Z; Huang H; Sun N; Tao P; Zhao C; Liang YC
Micromachines (Basel); 2019 Dec; 10(12):. PubMed ID: 31817374
[TBL] [Abstract][Full Text] [Related]
22. AlGaN/GaN High Electron Mobility Transistor-Based Biosensor for the Detection of C-Reactive Protein.
Lee HH; Bae M; Jo SH; Shin JK; Son DH; Won CH; Jeong HM; Lee JH; Kang SW
Sensors (Basel); 2015 Jul; 15(8):18416-26. PubMed ID: 26225981
[TBL] [Abstract][Full Text] [Related]
23. Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors.
Kang SC; Jung HW; Chang SJ; Kim SM; Lee SK; Lee BH; Kim H; Noh YS; Lee SH; Kim SI; Ahn HK; Lim JW
Nanomaterials (Basel); 2020 Oct; 10(11):. PubMed ID: 33114425
[TBL] [Abstract][Full Text] [Related]
24. Dopant-free GaN/AlN/AlGaN radial nanowire heterostructures as high electron mobility transistors.
Li Y; Xiang J; Qian F; Gradecak S; Wu Y; Yan H; Blom DA; Lieber CM
Nano Lett; 2006 Jul; 6(7):1468-73. PubMed ID: 16834431
[TBL] [Abstract][Full Text] [Related]
25. Optimization of the Field Plate Design of a 1200 V p-GaN Power High-Electron-Mobility Transistor.
Liu CH; Huang CR; Wang HC; Kang YJ; Chiu HC; Kao HL; Chu KH; Kuo HC; Chen CT; Chang KJ
Micromachines (Basel); 2022 Sep; 13(9):. PubMed ID: 36144177
[TBL] [Abstract][Full Text] [Related]
26. Gate length scaling effect on high-electron mobility transistors devices using AlGaN/GaN and AlInN/AlN/GaN heterostructures.
Liao SY; Lu CC; Chang T; Huang CF; Cheng CH; Chang LB
J Nanosci Nanotechnol; 2014 Aug; 14(8):6243-6. PubMed ID: 25936096
[TBL] [Abstract][Full Text] [Related]
27. Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review.
Haziq M; Falina S; Manaf AA; Kawarada H; Syamsul M
Micromachines (Basel); 2022 Dec; 13(12):. PubMed ID: 36557432
[TBL] [Abstract][Full Text] [Related]
28. Potassium selective chemically modified field effect transistors based on AlGaN/GaN two-dimensional electron gas heterostructures.
Alifragis Y; Volosirakis A; Chaniotakis NA; Konstantinidis G; Adikimenakis A; Georgakilas A
Biosens Bioelectron; 2007 Jun; 22(12):2796-801. PubMed ID: 17098415
[TBL] [Abstract][Full Text] [Related]
29. Simulation Study of the Use of AlGaN/GaN Ultra-Thin-Barrier HEMTs with Hybrid Gates for Achieving a Wide Threshold Voltage Modulation Range.
Wang S; Zhou Q; Chen K; Bai P; Wang J; Zhu L; Zhou C; Gao W; Zhang B
Materials (Basel); 2022 Jan; 15(2):. PubMed ID: 35057371
[TBL] [Abstract][Full Text] [Related]
30. Investigation of Normally-Off p-GaN/AlGaN/GaN HEMTs Using a Self-Terminating Etching Technique with Multi-Finger Architecture Modulation for High Power Application.
Chang YC; Ho YL; Huang TY; Huang DW; Wu CH
Micromachines (Basel); 2021 Apr; 12(4):. PubMed ID: 33919816
[TBL] [Abstract][Full Text] [Related]
31. Direct label-free electrical immunodetection of transplant rejection protein biomarker in physiological buffer using floating gate AlGaN/GaN high electron mobility transistors.
Tulip FS; Eteshola E; Desai S; Mostafa S; Roopa S; Evans B; Islam SK
IEEE Trans Nanobioscience; 2014 Jun; 13(2):138-45. PubMed ID: 24803243
[TBL] [Abstract][Full Text] [Related]
32. Optical and Electrical Properties of AlGaN-Based High Electron Mobility Transistors and Photodetectors with AlGaN/AlN/GaN Channel-Stacking Structure.
Lin CF; Huang KP; Wang HW; Chen KT; Wang CJ; Kao YC; Chen H; Lin YS
ACS Omega; 2024 Jun; 9(23):25277-25282. PubMed ID: 38882064
[TBL] [Abstract][Full Text] [Related]
33. Investigation of the Gate Degradation Induced by Forward Gate Voltage Stress in p-GaN Gate High Electron Mobility Transistors.
Chae M; Kim H
Micromachines (Basel); 2023 Apr; 14(5):. PubMed ID: 37241601
[TBL] [Abstract][Full Text] [Related]
34. Miniature Mesa Extension for a Planar Submicron AlGaN/GaN HEMT Gate Formation.
Alathbah M; Elgaid K
Micromachines (Basel); 2022 Nov; 13(11):. PubMed ID: 36422436
[TBL] [Abstract][Full Text] [Related]
35. Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications.
Lee MW; Chuang CW; Gamiz F; Chang EY; Lin YC
Micromachines (Basel); 2023 Dec; 15(1):. PubMed ID: 38258200
[TBL] [Abstract][Full Text] [Related]
36. Response Enhancement of Pt-AlGaN/GaN HEMT Gas Sensors by Thin AlGaN Barrier with the Source-Connected Gate Configuration at High Temperature.
Vuong TA; Cha HY; Kim H
Micromachines (Basel); 2021 May; 12(5):. PubMed ID: 34068454
[TBL] [Abstract][Full Text] [Related]
37. Design and Demonstration of Tunable Amplified Sensitivity of AlGaN/GaN High Electron Mobility Transistor (HEMT)-Based Biosensors in Human Serum.
Tai TY; Sinha A; Sarangadharan I; Pulikkathodi AK; Wang SL; Lee GY; Chyi JI; Shiesh SC; Lee GB; Wang YL
Anal Chem; 2019 May; 91(9):5953-5960. PubMed ID: 30994326
[TBL] [Abstract][Full Text] [Related]
38. Gate-controlled amplifiable ultraviolet AlGaN/GaN high-electron-mobility phototransistor.
Baek SH; Lee GW; Cho CY; Lee SN
Sci Rep; 2021 Mar; 11(1):7172. PubMed ID: 33785795
[TBL] [Abstract][Full Text] [Related]
39. a-Axis GaN/AlN/AlGaN Core-Shell Heterojunction Microwires as Normally Off High Electron Mobility Transistors.
Song W; Wang R; Wang X; Guo D; Chen H; Zhu Y; Liu L; Zhou Y; Sun Q; Wang L; Li S
ACS Appl Mater Interfaces; 2017 Nov; 9(47):41435-41442. PubMed ID: 29111660
[TBL] [Abstract][Full Text] [Related]
40. Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors.
Keum D; Kim H
Micromachines (Basel); 2019 Oct; 10(11):. PubMed ID: 31717725
[TBL] [Abstract][Full Text] [Related]
[Previous] [Next] [New Search]
