These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

316 related articles for article (PubMed ID: 25965011)

  • 21. GaN/AlGaN Nanocolumn Ultraviolet Light-Emitting Diode Using Double-Layer Graphene as Substrate and Transparent Electrode.
    Høiaas IM; Liudi Mulyo A; Vullum PE; Kim DC; Ahtapodov L; Fimland BO; Kishino K; Weman H
    Nano Lett; 2019 Mar; 19(3):1649-1658. PubMed ID: 30702300
    [TBL] [Abstract][Full Text] [Related]  

  • 22. The structural properties of GaN/AlN core-shell nanocolumn heterostructures.
    Hestroffer K; Mata R; Camacho D; Leclere C; Tourbot G; Niquet YM; Cros A; Bougerol C; Renevier H; Daudin B
    Nanotechnology; 2010 Oct; 21(41):415702. PubMed ID: 20844326
    [TBL] [Abstract][Full Text] [Related]  

  • 23. High-Quality GaN Epilayers Achieved by Facet-Controlled Epitaxial Lateral Overgrowth on Sputtered AlN/PSS Templates.
    He C; Zhao W; Zhang K; He L; Wu H; Liu N; Zhang S; Liu X; Chen Z
    ACS Appl Mater Interfaces; 2017 Dec; 9(49):43386-43392. PubMed ID: 29164860
    [TBL] [Abstract][Full Text] [Related]  

  • 24. The structural properties of GaN insertions in GaN/AlN nanocolumn heterostructures.
    Bougerol C; Songmuang R; Camacho D; Niquet YM; Mata R; Cros A; Daudin B
    Nanotechnology; 2009 Jul; 20(29):295706. PubMed ID: 19567953
    [TBL] [Abstract][Full Text] [Related]  

  • 25. Single-Exciton Photoluminescence in a GaN Monolayer inside an AlN Nanocolumn.
    Evropeitsev E; Nechaev D; Jmerik V; Zadiranov Y; Kulagina M; Troshkov S; Guseva Y; Berezina D; Shubina T; Toropov A
    Nanomaterials (Basel); 2023 Jul; 13(14):. PubMed ID: 37513064
    [TBL] [Abstract][Full Text] [Related]  

  • 26. Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes.
    Hu H; Zhou S; Liu X; Gao Y; Gui C; Liu S
    Sci Rep; 2017 Mar; 7():44627. PubMed ID: 28294166
    [TBL] [Abstract][Full Text] [Related]  

  • 27. 395 nm GaN-based near-ultraviolet light-emitting diodes on Si substrates with a high wall-plug efficiency of 52.0%@350 mA.
    Li Y; Lan J; Wang W; Zheng Y; Xie W; Tang X; Kong D; Xia Y; Lan Z; Li R; He X; Li G
    Opt Express; 2019 Mar; 27(5):7447-7457. PubMed ID: 30876308
    [TBL] [Abstract][Full Text] [Related]  

  • 28. High-quality uniaxial In(x)Ga(1-x)N/GaN multiple quantum well (MQW) nanowires (NWs) on Si(111) grown by metal-organic chemical vapor deposition (MOCVD) and light-emitting diode (LED) fabrication.
    Ra YH; Navamathavan R; Park JH; Lee CR
    ACS Appl Mater Interfaces; 2013 Mar; 5(6):2111-7. PubMed ID: 23432423
    [TBL] [Abstract][Full Text] [Related]  

  • 29. Growth of Ga
    Zheng DG; Min S; Kim J; Han DP
    Materials (Basel); 2023 Dec; 17(1):. PubMed ID: 38204021
    [TBL] [Abstract][Full Text] [Related]  

  • 30. Optical Emission of Individual GaN Nanocolumns Analyzed with High Spatial Resolution.
    Urban A; Müller M; Karbaum C; Schmidt G; Veit P; Malindretos J; Bertram F; Christen J; Rizzi A
    Nano Lett; 2015 Aug; 15(8):5105-9. PubMed ID: 26225541
    [TBL] [Abstract][Full Text] [Related]  

  • 31. Semipolar (202̅1̅) GaN and InGaN Light-Emitting Diodes Grown on Sapphire.
    Song J; Choi J; Xiong K; Xie Y; Cha JJ; Han J
    ACS Appl Mater Interfaces; 2017 Apr; 9(16):14088-14092. PubMed ID: 28361536
    [TBL] [Abstract][Full Text] [Related]  

  • 32. Multicolour luminescence from InGaN quantum wells grown over GaN nanowire arrays by molecular-beam epitaxy.
    Armitage R; Tsubaki K
    Nanotechnology; 2010 May; 21(19):195202. PubMed ID: 20400823
    [TBL] [Abstract][Full Text] [Related]  

  • 33. Growth, structural and optical properties of ternary InGaN nanorods prepared by selective-area metalorganic chemical vapor deposition.
    Song J; Leung B; Zhang Y; Han J
    Nanotechnology; 2014 Jun; 25(22):225602. PubMed ID: 24807561
    [TBL] [Abstract][Full Text] [Related]  

  • 34. GaN-based ultraviolet light-emitting diodes with AlN/GaN/InGaN multiple quantum wells.
    Chang HM; Lai WC; Chen WS; Chang SJ
    Opt Express; 2015 Apr; 23(7):A337-45. PubMed ID: 25968799
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Room-temperature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si.
    Sun Y; Zhou K; Feng M; Li Z; Zhou Y; Sun Q; Liu J; Zhang L; Li D; Sun X; Li D; Zhang S; Ikeda M; Yang H
    Light Sci Appl; 2018; 7():13. PubMed ID: 30839586
    [TBL] [Abstract][Full Text] [Related]  

  • 36. Light-Emitting Diodes Based on InGaN/GaN Nanowires on Microsphere-Lithography-Patterned Si Substrates.
    Dvoretckaia L; Gridchin V; Mozharov A; Maksimova A; Dragunova A; Melnichenko I; Mitin D; Vinogradov A; Mukhin I; Cirlin G
    Nanomaterials (Basel); 2022 Jun; 12(12):. PubMed ID: 35745332
    [TBL] [Abstract][Full Text] [Related]  

  • 37. Selective area grown AlInGaN nanowire arrays with core-shell structures for photovoltaics on silicon.
    Wang R; Cheng S; Vanka S; Botton GA; Mi Z
    Nanoscale; 2021 May; 13(17):8163-8173. PubMed ID: 33881116
    [TBL] [Abstract][Full Text] [Related]  

  • 38. Optical properties of GaN nanorods grown by molecular-beam epitaxy; dependence on growth time.
    Park CM; Park YS; Im H; Kang TW
    Nanotechnology; 2006 Feb; 17(4):952-5. PubMed ID: 21727365
    [TBL] [Abstract][Full Text] [Related]  

  • 39. Vertically p-n-junctioned GaN nano-wire array diode fabricated on Si(111) using MOCVD.
    Park JH; Kim MH; Kissinger S; Lee CR
    Nanoscale; 2013 Apr; 5(7):2959-66. PubMed ID: 23455517
    [TBL] [Abstract][Full Text] [Related]  

  • 40. Dual-wavelength GaN-based LEDs grown on truncated hexagonal pyramids formed by selective-area regrowth on Si-implanted GaN templates.
    Lee ML; Yeh YH; Tu SJ; Chen PC; Wu MJ; Lai WC; Sheu JK
    Opt Express; 2013 Sep; 21 Suppl 5():A864-71. PubMed ID: 24104581
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 16.