131 related articles for article (PubMed ID: 25965773)
21. An ordered Si nanowire with NiSi2 tip arrays as excellent field emitters.
Liu CY; Li WS; Chu LW; Lu MY; Tsai CJ; Chen LJ
Nanotechnology; 2011 Feb; 22(5):055603. PubMed ID: 21178255
[TBL] [Abstract][Full Text] [Related]
22. Metal Sheet of Atomic Thickness Embedded in Silicon.
Bondarenko LV; Tupchaya AY; Vekovshinin YE; Gruznev DV; Mihalyuk AN; Olyanich DA; Ivanov YP; Matetskiy AV; Zotov AV; Saranin AA
ACS Nano; 2021 Dec; 15(12):19357-19363. PubMed ID: 34783543
[TBL] [Abstract][Full Text] [Related]
23. Dynamic observation on the growth behaviors in manganese silicide/silicon nanowire heterostructures.
Hsieh YH; Chiu CH; Huang CW; Chen JY; Lin WJ; Wu WW
Nanoscale; 2015 Feb; 7(5):1776-81. PubMed ID: 25519809
[TBL] [Abstract][Full Text] [Related]
24. Lattice-Match Stabilization and Magnetic Properties of Metastable Epitaxial Permalloy-Disilicide Nanostructures on a Vicinal Si(111) Substrate.
Bhukta A; Horvitz D; Kohn A; Goldfarb I
Nanomaterials (Basel); 2021 May; 11(5):. PubMed ID: 34065681
[TBL] [Abstract][Full Text] [Related]
25. Defect-free erbium silicide formation using an ultrathin Ni interlayer.
Choi J; Choi S; Kang YS; Na S; Lee HJ; Cho MH; Kim H
ACS Appl Mater Interfaces; 2014 Aug; 6(16):14712-7. PubMed ID: 25093916
[TBL] [Abstract][Full Text] [Related]
26. New Strategies for Engineering Tensile Strained Si Layers for Novel n-Type MOSFET.
David T; Berbezier I; Aqua JN; Abbarchi M; Ronda A; Pons N; Domart F; Costaganna P; Uren G; Favre L
ACS Appl Mater Interfaces; 2021 Jan; 13(1):1807-1817. PubMed ID: 33356130
[TBL] [Abstract][Full Text] [Related]
27. Atomic Layer Deposition and Strain Analysis of Epitaxial GaN-ZnO Core-Shell Nanowires.
Kolhep M; Pantle F; Karlinger M; Wang D; Scherer T; Kübel C; Stutzmann M; Zacharias M
Nano Lett; 2023 Aug; 23(15):6920-6926. PubMed ID: 37499227
[TBL] [Abstract][Full Text] [Related]
28. Uniform and position-controlled InAs nanowires on 2" Si substrates for transistor applications.
Ghalamestani SG; Johansson S; Borg BM; Lind E; Dick KA; Wernersson LE
Nanotechnology; 2012 Jan; 23(1):015302. PubMed ID: 22155896
[TBL] [Abstract][Full Text] [Related]
29. In situ analysis of strain relaxation during catalyst-free nucleation and growth of GaN nanowires.
Knelangen M; Consonni V; Trampert A; Riechert H
Nanotechnology; 2010 Jun; 21(24):245705. PubMed ID: 20484796
[TBL] [Abstract][Full Text] [Related]
30. The influence of surface oxide on the growth of metal/semiconductor nanowires.
Lu KC; Wu WW; Ouyang H; Lin YC; Huang Y; Wang CW; Wu ZW; Huang CW; Chen LJ; Tu KN
Nano Lett; 2011 Jul; 11(7):2753-8. PubMed ID: 21657260
[TBL] [Abstract][Full Text] [Related]
31. Copper silicide/silicon nanowire heterostructures: in situ TEM observation of growth behaviors and electron transport properties.
Chiu CH; Huang CW; Chen JY; Huang YT; Hu JC; Chen LT; Hsin CL; Wu WW
Nanoscale; 2013 Jun; 5(11):5086-92. PubMed ID: 23640615
[TBL] [Abstract][Full Text] [Related]
32. Nickel/Platinum Dual Silicide Axial Nanowire Heterostructures with Excellent Photosensor Applications.
Wu YT; Huang CW; Chiu CH; Chang CF; Chen JY; Lin TY; Huang YT; Lu KC; Yeh PH; Wu WW
Nano Lett; 2016 Feb; 16(2):1086-91. PubMed ID: 26789624
[TBL] [Abstract][Full Text] [Related]
33. Interfacial Silicide Formation and Stress Evolution during Sputter Deposition of Ultrathin Pd Layers on a-Si.
Krause B; Abadias G; Furgeaud C; Michel A; Resta A; Coati A; Garreau Y; Vlad A; Hauschild D; Baumbach T
ACS Appl Mater Interfaces; 2019 Oct; 11(42):39315-39323. PubMed ID: 31547648
[TBL] [Abstract][Full Text] [Related]
34. Carrier Mobility Enhancement of Tensile Strained Si and SiGe Nanowires via Surface Defect Engineering.
Ma JW; Lee WJ; Bae JM; Jeong KS; Oh SH; Kim JH; Kim SH; Seo JH; Ahn JP; Kim H; Cho MH
Nano Lett; 2015 Nov; 15(11):7204-10. PubMed ID: 26492109
[TBL] [Abstract][Full Text] [Related]
35. Prediction of orientation relationships and interface structures between α-, β-, γ-FeSi
Visotin MA; Tarasov IA; Fedorov AS; Varnakov SN; Ovchinnikov SG
Acta Crystallogr B Struct Sci Cryst Eng Mater; 2020 Jun; 76(Pt 3):469-482. PubMed ID: 32831264
[TBL] [Abstract][Full Text] [Related]
36. An investigation of the electrical and optical properties of thin iron layers grown on the epitaxial Si(111)-(2 × 2)-Fe phase and on an Si(111)7 × 7 surface.
Goroshko DL; Galkin NG; Fomin DV; Gouralnik AS; Vavanova SV
J Phys Condens Matter; 2009 Oct; 21(43):435801. PubMed ID: 21832445
[TBL] [Abstract][Full Text] [Related]
37. Ni-silicide growth kinetics in Si and Si/SiO2 core/shell nanowires.
Ogata K; Sutter E; Zhu X; Hofmann S
Nanotechnology; 2011 Sep; 22(36):365305. PubMed ID: 21841219
[TBL] [Abstract][Full Text] [Related]
38. Single crystalline PtSi nanowires, PtSi/Si/PtSi nanowire heterostructures, and nanodevices.
Lin YC; Lu KC; Wu WW; Bai J; Chen LJ; Tu KN; Huang Y
Nano Lett; 2008 Mar; 8(3):913-8. PubMed ID: 18266331
[TBL] [Abstract][Full Text] [Related]
39. Nucleation and growth of metal-catalyzed silicon nanowires under plasma.
Hývl M; Müller M; Stuchlíková TH; Stuchlík J; Šilhavík M; Kočka J; Fejfar A; Červenka J
Nanotechnology; 2020 May; 31(22):225601. PubMed ID: 32066127
[TBL] [Abstract][Full Text] [Related]
40. Growth of nickel silicides in Si and Si/SiOx core/shell nanowires.
Lin YC; Chen Y; Xu D; Huang Y
Nano Lett; 2010 Nov; 10(11):4721-6. PubMed ID: 20942385
[TBL] [Abstract][Full Text] [Related]
[Previous] [Next] [New Search]