These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

146 related articles for article (PubMed ID: 25977672)

  • 1. Raman scattering study on Sb spray InAs/GaAs quantum dot nanostructure systems.
    Dai L; Bremner SP; Tan S; Wang S; Zhang G; Liu Z
    Nanoscale Res Lett; 2015; 10():202. PubMed ID: 25977672
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Suppression of dislocations by Sb spray in the vicinity of InAs/GaAs quantum dots.
    Dai L; Bremner SP; Tan S; Wang S; Zhang G; Liu Z
    Nanoscale Res Lett; 2014; 9(1):278. PubMed ID: 24948897
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Ground state lasing at 1.30 microm from InAs/GaAs quantum dot lasers grown by metal-organic chemical vapor deposition.
    Guimard D; Ishida M; Bordel D; Li L; Nishioka M; Tanaka Y; Ekawa M; Sudo H; Yamamoto T; Kondo H; Sugawara M; Arakawa Y
    Nanotechnology; 2010 Mar; 21(10):105604. PubMed ID: 20160334
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Shape and size control of InAs/InP (113)B quantum dots by Sb deposition during the capping procedure.
    Lu W; Bozkurt M; Keizer JG; Rohel T; Folliot H; Bertru N; Koenraad PM
    Nanotechnology; 2011 Feb; 22(5):055703. PubMed ID: 21178229
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures.
    Golovynskyi S; Seravalli L; Datsenko O; Trevisi G; Frigeri P; Gombia E; Golovynska I; Kondratenko SV; Qu J; Ohulchanskyy TY
    Nanoscale Res Lett; 2017 Dec; 12(1):335. PubMed ID: 28482647
    [TBL] [Abstract][Full Text] [Related]  

  • 6. InAs quantum dots capped by GaAs, In0.4Ga0.6As dots, and In0.2Ga0.8As well.
    Fu Y; Wang SM; Ferdos F; Sadeghi M; Larsson A
    J Nanosci Nanotechnol; 2002; 2(3-4):421-6. PubMed ID: 12908273
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Optical identification of electronic state levels of an asymmetric InAs/InGaAs/GaAs dot-in-well structure.
    Zhou X; Chen Y; Xu B
    Nanoscale Res Lett; 2011 Apr; 6(1):317. PubMed ID: 21711820
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Effect of growth temperature and quantum structure on InAs/GaAs quantum dot solar cell.
    Park MH; Kim HS; Park SJ; Song JD; Kim SH; Lee YJ; Choi WJ; Park JH
    J Nanosci Nanotechnol; 2014 Apr; 14(4):2955-9. PubMed ID: 24734716
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Raman scattering of InAs/AlAs quantum dot superlattices grown on (001) and (311)B GaAs surfaces.
    Milekhin A; Yeryukov N; Toropov A; Dmitriev D; Sheremet E; Zahn DR
    Nanoscale Res Lett; 2012 Aug; 7(1):476. PubMed ID: 22916827
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser.
    Du Y; Wei W; Xu B; Wang G; Li B; Miao Y; Zhao X; Kong Z; Lin H; Yu J; Su J; Dong Y; Wang W; Ye T; Zhang J; Radamson HH
    Micromachines (Basel); 2022 Sep; 13(10):. PubMed ID: 36295932
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Enhancing optical characteristics of InAs/InGaAsSb quantum dot structures with long-excited state emission at 1.31 μm.
    Liu WS; Tseng HL; Kuo PC
    Opt Express; 2014 Aug; 22(16):18860-9. PubMed ID: 25320972
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Influence of GaAsBi Matrix on Optical and Structural Properties of InAs Quantum Dots.
    Wang P; Pan W; Wu X; Liu J; Cao C; Wang S; Gong Q
    Nanoscale Res Lett; 2016 Dec; 11(1):280. PubMed ID: 27255900
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Impact of N on the atomic-scale Sb distribution in quaternary GaAsSbN-capped InAs quantum dots.
    Reyes DF; González D; Ulloa JM; Sales DL; Dominguez L; Mayoral A; Hierro A
    Nanoscale Res Lett; 2012 Nov; 7(1):653. PubMed ID: 23181950
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Bipolar Effects in Photovoltage of Metamorphic InAs/InGaAs/GaAs Quantum Dot Heterostructures: Characterization and Design Solutions for Light-Sensitive Devices.
    Golovynskyi S; Seravalli L; Datsenko O; Kozak O; Kondratenko SV; Trevisi G; Frigeri P; Gombia E; Lavoryk SR; Golovynska I; Ohulchanskyy TY; Qu J
    Nanoscale Res Lett; 2017 Oct; 12(1):559. PubMed ID: 28983869
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Thermal stability of the peak emission wavelength in multilayer InAs/GaAs QDs capped with a combination capping of InAlGaAs and GaAs.
    Adhikary S; Halder N; Chakrabarti S
    J Nanosci Nanotechnol; 2011 May; 11(5):4067-72. PubMed ID: 21780407
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Development of a 1550-nm InAs/GaAs Quantum Dot Saturable Absorber Mirror with a Short-Period Superlattice Capping Structure Towards Femtosecond Fiber Laser Applications.
    Jiang C; Ning J; Li X; Wang X; Zhang Z
    Nanoscale Res Lett; 2019 Dec; 14(1):362. PubMed ID: 31792621
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Band alignment tailoring of InAs1-xSbx/GaAs quantum dots: control of type I to type II transition.
    He J; Reyner CJ; Liang BL; Nunna K; Huffaker DL; Pavarelli N; Gradkowski K; Ochalski TJ; Huyet G; Dorogan VG; Mazur YI; Salamo GJ
    Nano Lett; 2010 Aug; 10(8):3052-6. PubMed ID: 20698619
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Enhanced Photoluminescence of 1.3 μm InAs Quantum Dots Grown on Ultrathin GaAs Buffer/Si Templates by Suppressing Interfacial Defect Emission.
    Kim Y; Chu RJ; Ryu G; Woo S; Lung QND; Ahn DH; Han JH; Choi WJ; Jung D
    ACS Appl Mater Interfaces; 2022 Oct; 14(39):45051-45058. PubMed ID: 36162121
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Structure and composition profile of InAs/GaAs quantum dots capped by an InGaAs and InAlAs combination layer.
    He J; Wu Y; Wang KL
    Nanotechnology; 2010 Jun; 21(25):255705. PubMed ID: 20516585
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Morphology and optical properties of single- and multi-layer InAs quantum dots.
    Hsu CC; Hsu RQ; Wu YH
    J Electron Microsc (Tokyo); 2010 Aug; 59 Suppl 1():S149-54. PubMed ID: 20576720
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 8.