These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

294 related articles for article (PubMed ID: 26035286)

  • 1. Short-wavelength infrared photodetector on Si employing strain-induced growth of very tall InAs nanowire arrays.
    Shin HW; Lee SJ; Kim DG; Bae MH; Heo J; Choi KJ; Choi WJ; Choe JW; Shin JC
    Sci Rep; 2015 Jun; 5():10764. PubMed ID: 26035286
    [TBL] [Abstract][Full Text] [Related]  

  • 2. InAs nanowire arrays for room-temperature ultra-broadband infrared photodetection.
    Li Z; Azimi Z; Li Z; Yu Y; Huang L; Jin W; Tan HH; Jagadish C; Wong-Leung J; Fu L
    Nanoscale; 2023 Jun; 15(23):10033-10041. PubMed ID: 37248736
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Low Dark Current Operation in InAs/GaAs(111)A Infrared Photodetectors: Role of Misfit Dislocations at the Interface.
    Mano T; Ohtake A; Kawazu T; Miyazaki HT; Sakuma Y
    ACS Appl Mater Interfaces; 2023 Jun; 15(24):29636-29642. PubMed ID: 37286339
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Feasibility of achieving high detectivity at short- and mid-wavelength infrared using nanowire-plasmonic photodetectors with p-n heterojunctions.
    Ren D; Rong Z; Azizur-Rahman KM; Somasundaram S; Shahili M; Huffaker DL
    Nanotechnology; 2019 Jan; 30(4):044002. PubMed ID: 30465548
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Ultrasensitive Mid-wavelength Infrared Photodetection Based on a Single InAs Nanowire.
    Zhang X; Huang H; Yao X; Li Z; Zhou C; Zhang X; Chen P; Fu L; Zhou X; Wang J; Hu W; Lu W; Zou J; Tan HH; Jagadish C
    ACS Nano; 2019 Mar; 13(3):3492-3499. PubMed ID: 30817125
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Uncooled Photodetector at Short-Wavelength Infrared Using InAs Nanowire Photoabsorbers on InP with p- n Heterojunctions.
    Ren D; Meng X; Rong Z; Cao M; Farrell AC; Somasundaram S; Azizur-Rahman KM; Williams BS; Huffaker DL
    Nano Lett; 2018 Dec; 18(12):7901-7908. PubMed ID: 30444964
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Visible Light-Assisted High-Performance Mid-Infrared Photodetectors Based on Single InAs Nanowire.
    Fang H; Hu W; Wang P; Guo N; Luo W; Zheng D; Gong F; Luo M; Tian H; Zhang X; Luo C; Wu X; Chen P; Liao L; Pan A; Chen X; Lu W
    Nano Lett; 2016 Oct; 16(10):6416-6424. PubMed ID: 27598791
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Growth of Catalyst-Free Epitaxial InAs Nanowires on Si Wafers Using Metallic Masks.
    Soo MT; Zheng K; Gao Q; Tan HH; Jagadish C; Zou J
    Nano Lett; 2016 Jul; 16(7):4189-93. PubMed ID: 27248817
    [TBL] [Abstract][Full Text] [Related]  

  • 9. High-Performance Flexible InAs Thin-Film Photodetector Arrays with Heteroepitaxial Growth Using an Abruptly Graded In
    Woo S; Ryu G; Kang SS; Kim TS; Hong N; Han JH; Chu RJ; Lee IH; Jung D; Choi WJ
    ACS Appl Mater Interfaces; 2021 Nov; 13(46):55648-55655. PubMed ID: 34779602
    [TBL] [Abstract][Full Text] [Related]  

  • 10. InAs on GaAs Photodetectors Using Thin InAlAs Graded Buffers and Their Application to Exceeding Short-Wave Infrared Imaging at 300 K.
    Kang SS; Geum DM; Kwak K; Kang JH; Shim CH; Hyun H; Kim SH; Choi WJ; Choi SH; Park MC; Song JD
    Sci Rep; 2019 Sep; 9(1):12875. PubMed ID: 31492924
    [TBL] [Abstract][Full Text] [Related]  

  • 11. InAs/GaAs quantum dot infrared photodetector on a Si substrate by means of metal wafer bonding and epitaxial lift-off.
    Kim H; Ahn SY; Kim S; Ryu G; Kyhm JH; Lee KW; Park JH; Choi WJ
    Opt Express; 2017 Jul; 25(15):17562-17570. PubMed ID: 28789248
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Sub-100 nm Si nanowire and nano-sheet array formation by MacEtch using a non-lithographic InAs nanowire mask.
    Shin JC; Zhang C; Li X
    Nanotechnology; 2012 Aug; 23(30):305305. PubMed ID: 22781145
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Wafer-scale production of uniform InAs(y)P(1-y) nanowire array on silicon for heterogeneous integration.
    Shin JC; Lee A; Mohseni PK; Kim DY; Yu L; Kim JH; Kim HJ; Choi WJ; Wasserman D; Choi KJ; Li X
    ACS Nano; 2013 Jun; 7(6):5463-71. PubMed ID: 23651314
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Structural and electrical properties of catalyst-free Si-doped InAs nanowires formed on Si(111).
    Park DW; Jeon SG; Lee CR; Lee SJ; Song JY; Kim JO; Noh SK; Leem JY; Kim JS
    Sci Rep; 2015 Nov; 5():16652. PubMed ID: 26581781
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Facet-Selective Epitaxy of Compound Semiconductors on Faceted Silicon Nanowires.
    Mankin MN; Day RW; Gao R; No YS; Kim SK; McClelland AA; Bell DC; Park HG; Lieber CM
    Nano Lett; 2015 Jul; 15(7):4776-82. PubMed ID: 26057208
    [TBL] [Abstract][Full Text] [Related]  

  • 16. III-V nanowires on black silicon and low-temperature growth of self-catalyzed rectangular InAs NWs.
    Haggren T; Khayrudinov V; Dhaka V; Jiang H; Shah A; Kim M; Lipsanen H
    Sci Rep; 2018 Apr; 8(1):6410. PubMed ID: 29686418
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Mid-Infrared Lasing of Single Wurtzite InAs Nanowire.
    Sumikura H; Zhang G; Takiguchi M; Takemura N; Shinya A; Gotoh H; Notomi M
    Nano Lett; 2019 Nov; 19(11):8059-8065. PubMed ID: 31638818
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Edge-Epitaxial Growth of InSe Nanowires toward High-Performance Photodetectors.
    Hao S; Yan S; Wang Y; Xu T; Zhang H; Cong X; Li L; Liu X; Cao T; Gao A; Zhang L; Jia L; Long M; Hu W; Wang X; Tan P; Sun L; Cui X; Liang SJ; Miao F
    Small; 2020 Jan; 16(4):e1905902. PubMed ID: 31867892
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Room temperature GaAsSb single nanowire infrared photodetectors.
    Li Z; Yuan X; Fu L; Peng K; Wang F; Fu X; Caroff P; White TP; Hoe Tan H; Jagadish C
    Nanotechnology; 2015 Nov; 26(44):445202. PubMed ID: 26451616
    [TBL] [Abstract][Full Text] [Related]  

  • 20. High-Performance Room-Temperature UV-IR Photodetector Based on the InAs Nanosheet and Its Wavelength- and Intensity-Dependent Negative Photoconductivity.
    Wang X; Pan D; Sun M; Lyu F; Zhao J; Chen Q
    ACS Appl Mater Interfaces; 2021 Jun; 13(22):26187-26195. PubMed ID: 34032402
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 15.