BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

304 related articles for article (PubMed ID: 26074572)

  • 1. A first single-photon avalanche diode fabricated in standard SOI CMOS technology with a full characterization of the device.
    Lee MJ; Sun P; Charbon E
    Opt Express; 2015 May; 23(10):13200-9. PubMed ID: 26074572
    [TBL] [Abstract][Full Text] [Related]  

  • 2. A new single-photon avalanche diode in 90nm standard CMOS technology.
    Karami MA; Gersbach M; Yoon HJ; Charbon E
    Opt Express; 2010 Oct; 18(21):22158-66. PubMed ID: 20941117
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Custom single-photon avalanche diode with integrated front-end for parallel photon timing applications.
    Cammi C; Panzeri F; Gulinatti A; Rech I; Ghioni M
    Rev Sci Instrum; 2012 Mar; 83(3):033104. PubMed ID: 22462903
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Design and characterization of a p+/n-well SPAD array in 150nm CMOS process.
    Xu H; Pancheri L; Betta GD; Stoppa D
    Opt Express; 2017 May; 25(11):12765-12778. PubMed ID: 28786630
    [TBL] [Abstract][Full Text] [Related]  

  • 5. A wide spectral range single-photon avalanche diode fabricated in an advanced 180 nm CMOS technology.
    Mandai S; Fishburn MW; Maruyama Y; Charbon E
    Opt Express; 2012 Mar; 20(6):5849-57. PubMed ID: 22418462
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Single-photon avalanche diode fabricated in standard 55 nm bipolar-CMOS-DMOS technology with sub-20 V breakdown voltage.
    Ha WY; Park E; Eom D; Park HS; Chong D; Tan SS; Tng M; Quek E; Bruschini C; Charbon E; Choi WY; Lee MJ
    Opt Express; 2023 Apr; 31(9):13798-13805. PubMed ID: 37157258
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Modeling, Simulation Methods and Characterization of Photon Detection Probability in CMOS-SPAD.
    Panglosse A; Martin-Gonthier P; Marcelot O; Virmontois C; Saint-Pé O; Magnan P
    Sensors (Basel); 2021 Aug; 21(17):. PubMed ID: 34502751
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Modeling for Single-Photon Avalanche Diodes: State-of-the-Art and Research Challenges.
    Qian X; Jiang W; Elsharabasy A; Deen MJ
    Sensors (Basel); 2023 Mar; 23(7):. PubMed ID: 37050472
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Photon-Detection-Probability Simulation Method for CMOS Single-Photon Avalanche Diodes.
    Hsieh CA; Tsai CM; Tsui BY; Hsiao BJ; Lin SD
    Sensors (Basel); 2020 Jan; 20(2):. PubMed ID: 31941031
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Flexible ultrathin-body single-photon avalanche diode sensors and CMOS integration.
    Sun P; Ishihara R; Charbon E
    Opt Express; 2016 Feb; 24(4):3734-48. PubMed ID: 26907030
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Current-Assisted SPAD with Improved p-n Junction and Enhanced NIR Performance.
    Jegannathan G; Van den Dries T; Kuijk M
    Sensors (Basel); 2020 Dec; 20(24):. PubMed ID: 33322420
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Single-Photon Avalanche Diode with Enhanced NIR-Sensitivity for Automotive LIDAR Systems.
    Takai I; Matsubara H; Soga M; Ohta M; Ogawa M; Yamashita T
    Sensors (Basel); 2016 Mar; 16(4):459. PubMed ID: 27043569
    [TBL] [Abstract][Full Text] [Related]  

  • 13. An Ultrafast Active Quenching Active Reset Circuit with 50% SPAD Afterpulsing Reduction in a 28 nm FD-SOI CMOS Technology Using Body Biasing Technique.
    Dolatpoor Lakeh M; Kammerer JB; Aguénounon E; Issartel D; Schell JB; Rink S; Cathelin A; Calmon F; Uhring W
    Sensors (Basel); 2021 Jun; 21(12):. PubMed ID: 34200801
    [TBL] [Abstract][Full Text] [Related]  

  • 14. High fill-factor miniaturized SPAD arrays with a guard-ring-sharing technique.
    Morimoto K; Charbon E
    Opt Express; 2020 Apr; 28(9):13068-13080. PubMed ID: 32403788
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Noise optimization of single-photon avalanche diodes fabricated in 110 nm CMOS image sensor technology.
    Ha WY; Park E; Park B; Chae Y; Choi WY; Lee MJ
    Opt Express; 2022 Apr; 30(9):14958-14965. PubMed ID: 35473228
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Single-photon avalanche diodes in 0.18-μm high-voltage CMOS technology.
    Huang LD; Wu JY; Wang JP; Tsai CM; Huang YH; Wu DR; Lin SD
    Opt Express; 2017 Jun; 25(12):13333-13339. PubMed ID: 28788870
    [TBL] [Abstract][Full Text] [Related]  

  • 17. InGaAs/InAlAs single photon avalanche diode for 1550 nm photons.
    Meng X; Xie S; Zhou X; Calandri N; Sanzaro M; Tosi A; Tan CH; Ng JS
    R Soc Open Sci; 2016 Mar; 3(3):150584. PubMed ID: 27069647
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Fill-factor improvement of Si CMOS single-photon avalanche diode detector arrays by integration of diffractive microlens arrays.
    Intermite G; McCarthy A; Warburton RE; Ren X; Villa F; Lussana R; Waddie AJ; Taghizadeh MR; Tosi A; Zappa F; Buller GS
    Opt Express; 2015 Dec; 23(26):33777-91. PubMed ID: 26832039
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Low-noise low-jitter 32-pixels CMOS single-photon avalanche diodes array for single-photon counting from 300 nm to 900 nm.
    Scarcella C; Tosi A; Villa F; Tisa S; Zappa F
    Rev Sci Instrum; 2013 Dec; 84(12):123112. PubMed ID: 24387425
    [TBL] [Abstract][Full Text] [Related]  

  • 20. 2D Monte Carlo simulation of a silicon waveguide-based single-photon avalanche diode for visible wavelengths.
    Yanikgonul S; Leong V; Ong JR; Png CE; Krivitsky L
    Opt Express; 2018 Jun; 26(12):15232-15246. PubMed ID: 30114773
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 16.