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5. Line-Edge Roughness from Extreme Ultraviolet Lithography to Fin-Field-Effect-Transistor: Computational Study. Kim SK Micromachines (Basel); 2021 Nov; 12(12):. PubMed ID: 34945342 [TBL] [Abstract][Full Text] [Related]
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13. Extreme ultra-violet resists development concepts and performances. Lee JW; Kim J; Kim J J Nanosci Nanotechnol; 2012 Apr; 12(4):3256-8. PubMed ID: 22849100 [TBL] [Abstract][Full Text] [Related]
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