186 related articles for article (PubMed ID: 26189571)
21. Growth map for Ga-assisted growth of GaAs nanowires on Si(111) substrates by molecular beam epitaxy.
Bastiman F; Küpers H; Somaschini C; Geelhaar L
Nanotechnology; 2016 Mar; 27(9):095601. PubMed ID: 26822408
[TBL] [Abstract][Full Text] [Related]
22. Composition and optical properties of (In, Ga)As nanowires grown by group-III-assisted molecular beam epitaxy.
Ruiz MG; Castro A; Herranz J; da Silva A; John P; Trampert A; Brandt O; Geelhaar L; Lähnemann J
Nanotechnology; 2024 Apr; 35(26):. PubMed ID: 38527360
[TBL] [Abstract][Full Text] [Related]
23. Droplet-Confined Alternate Pulsed Epitaxy of GaAs Nanowires on Si Substrates down to CMOS-Compatible Temperatures.
Balaghi L; Tauchnitz T; Hübner R; Bischoff L; Schneider H; Helm M; Dimakis E
Nano Lett; 2016 Jul; 16(7):4032-9. PubMed ID: 27351336
[TBL] [Abstract][Full Text] [Related]
24. Impact of the Ga flux incidence angle on the growth kinetics of self-assisted GaAs nanowires on Si(111).
Vettori M; Danescu A; Guan X; Regreny P; Penuelas J; Gendry M
Nanoscale Adv; 2019 Nov; 1(11):4433-4441. PubMed ID: 36134421
[TBL] [Abstract][Full Text] [Related]
25. Hybrid III-V/IV Nanowires: High-Quality Ge Shell Epitaxy on GaAs Cores.
Zeng H; Yu X; Fonseka HA; Gott JA; Tang M; Zhang Y; Boras G; Xu J; Sanchez AM; Liu H
Nano Lett; 2018 Oct; 18(10):6397-6403. PubMed ID: 30205011
[TBL] [Abstract][Full Text] [Related]
26. All zinc-blende GaAs/(Ga,Mn)As core-shell nanowires with ferromagnetic ordering.
Yu X; Wang H; Pan D; Zhao J; Misuraca J; von Molnár S; Xiong P
Nano Lett; 2013 Apr; 13(4):1572-7. PubMed ID: 23517546
[TBL] [Abstract][Full Text] [Related]
27. Modeling the Radial Growth of Self-Catalyzed III-V Nanowires.
Dubrovskii VG; Leshchenko ED
Nanomaterials (Basel); 2022 May; 12(10):. PubMed ID: 35630920
[TBL] [Abstract][Full Text] [Related]
28. Bi incorporation and segregation in the MBE-grown GaAs-(Ga,Al)As-Ga(As,Bi) core-shell nanowires.
Sadowski J; Kaleta A; Kryvyi S; Janaszko D; Kurowska B; Bilska M; Wojciechowski T; Domagala JZ; Sanchez AM; Kret S
Sci Rep; 2022 Apr; 12(1):6007. PubMed ID: 35397635
[TBL] [Abstract][Full Text] [Related]
29. Direct integration of III-V compound semiconductor nanostructures on silicon by selective epitaxy.
Zhao Z; Yadavalli K; Hao Z; Wang KL
Nanotechnology; 2009 Jan; 20(3):035304. PubMed ID: 19417293
[TBL] [Abstract][Full Text] [Related]
30. Self-catalyzed ternary core-shell GaAsP nanowire arrays grown on patterned Si substrates by molecular beam epitaxy.
Zhang Y; Wu J; Aagesen M; Holm J; Hatch S; Tang M; Huo S; Liu H
Nano Lett; 2014 Aug; 14(8):4542-7. PubMed ID: 24971573
[TBL] [Abstract][Full Text] [Related]
31. Si Doping of Vapor-Liquid-Solid GaAs Nanowires: n-Type or p-Type?
Hijazi H; Monier G; Gil E; Trassoudaine A; Bougerol C; Leroux C; Castellucci D; Robert-Goumet C; Hoggan PE; André Y; Isik Goktas N; LaPierre RR; Dubrovskii VG
Nano Lett; 2019 Jul; 19(7):4498-4504. PubMed ID: 31203632
[TBL] [Abstract][Full Text] [Related]
32. Ga crystallization dynamics during annealing of self-assisted GaAs nanowires.
Scarpellini D; Fedorov A; Somaschini C; Frigeri C; Bollani M; Bietti S; Nöetzel R; Sanguinetti S
Nanotechnology; 2017 Jan; 28(4):045605. PubMed ID: 27997367
[TBL] [Abstract][Full Text] [Related]
33. A simple route to synchronized nucleation of self-catalyzed GaAs nanowires on silicon for sub-Poissonian length distributions.
Tauchnitz T; Berdnikov Y; Dubrovskii VG; Schneider H; Helm M; Dimakis E
Nanotechnology; 2018 Dec; 29(50):504004. PubMed ID: 30240362
[TBL] [Abstract][Full Text] [Related]
34. III-V nanowire arrays: growth and light interaction.
Heiss M; Russo-Averchi E; Dalmau-Mallorquí A; Tütüncüoğlu G; Matteini F; Rüffer D; Conesa-Boj S; Demichel O; Alarcon-Lladó E; Fontcuberta i Morral A
Nanotechnology; 2014 Jan; 25(1):014015. PubMed ID: 24334728
[TBL] [Abstract][Full Text] [Related]
35. A Novel Growth Method To Improve the Quality of GaAs Nanowires Grown by Ga-Assisted Chemical Beam Epitaxy.
García Núñez C; Braña AF; López N; García BJ
Nano Lett; 2018 Jun; 18(6):3608-3615. PubMed ID: 29739187
[TBL] [Abstract][Full Text] [Related]
36. Defect-Free Self-Catalyzed GaAs/GaAsP Nanowire Quantum Dots Grown on Silicon Substrate.
Wu J; Ramsay A; Sanchez A; Zhang Y; Kim D; Brossard F; Hu X; Benamara M; Ware ME; Mazur YI; Salamo GJ; Aagesen M; Wang Z; Liu H
Nano Lett; 2016 Jan; 16(1):504-11. PubMed ID: 26666697
[TBL] [Abstract][Full Text] [Related]
37. Self-catalyzed GaAsP nanowires grown on silicon substrates by solid-source molecular beam epitaxy.
Zhang Y; Aagesen M; Holm JV; Jørgensen HI; Wu J; Liu H
Nano Lett; 2013 Aug; 13(8):3897-902. PubMed ID: 23899047
[TBL] [Abstract][Full Text] [Related]
38. Nondestructive Characterizations of Au-Catalyzed GaAs Nanowires on GaAs(111)B Substrates via Identifications of 1st Order Optical Phonon Modes Using
Park JH; Kim RS; Park SJ; Park GC; Chung CH
J Nanosci Nanotechnol; 2020 Jul; 20(7):4358-4363. PubMed ID: 31968474
[TBL] [Abstract][Full Text] [Related]
39. Epitaxial Growth of Room-Temperature Ferromagnetic MnAs Segments on GaAs Nanowires via Sequential Crystallization.
Hubmann J; Bauer B; Körner HS; Furthmeier S; Buchner M; Bayreuther G; Dirnberger F; Schuh D; Back CH; Zweck J; Reiger E; Bougeard D
Nano Lett; 2016 Feb; 16(2):900-5. PubMed ID: 26756067
[TBL] [Abstract][Full Text] [Related]
40. Formation Mechanism of Twinning Superlattices in Doped GaAs Nanowires.
Isik Goktas N; Sokolovskii A; Dubrovskii VG; LaPierre RR
Nano Lett; 2020 May; 20(5):3344-3351. PubMed ID: 32239956
[TBL] [Abstract][Full Text] [Related]
[Previous] [Next] [New Search]
