These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

386 related articles for article (PubMed ID: 26193570)

  • 1. Temperature dependence of photoluminescence spectra for green light emission from InGaN/GaN multiple wells.
    Liu W; Zhao DG; Jiang DS; Chen P; Liu ZS; Zhu JJ; Shi M; Zhao DM; Li X; Liu JP; Zhang SM; Wang H; Yang H; Zhang YT; Du GT
    Opt Express; 2015 Jun; 23(12):15935-43. PubMed ID: 26193570
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Effect of strain relaxation in InGaN/GaN multi-quantum wells with self-assembled Pt nanoclusters.
    Park AH; Oh TS; Seo TH; Lee SB; Lee GH; Suh EK
    J Nanosci Nanotechnol; 2014 Nov; 14(11):8347-51. PubMed ID: 25958526
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Enhanced radiative recombination and suppressed Auger process in semipolar and nonpolar InGaN/GaN quantum wells grown over GaN nanowires.
    You G; Liu J; Jiang Z; Wang L; El-Masry NA; Hosalli AM; Bedair SM; Xu J
    Opt Lett; 2014 Mar; 39(6):1501-4. PubMed ID: 24690823
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Emission Characteristics of InGaN/GaN Core-Shell Nanorods Embedded in a 3D Light-Emitting Diode.
    Jung BO; Bae SY; Lee S; Kim SY; Lee JY; Honda Y; Amano H
    Nanoscale Res Lett; 2016 Dec; 11(1):215. PubMed ID: 27102904
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Recombination Pathways in Green InGaN/GaN Multiple Quantum Wells.
    Lin T; Kuo HC; Jiang XD; Feng ZC
    Nanoscale Res Lett; 2017 Dec; 12(1):137. PubMed ID: 28235373
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Strain-Controlled Recombination in InGaN/GaN Multiple Quantum Wells on Silicon Substrates.
    Lin T; Zhou ZY; Huang YM; Yang K; Zhang BJ; Feng ZC
    Nanoscale Res Lett; 2018 Aug; 13(1):243. PubMed ID: 30136130
    [TBL] [Abstract][Full Text] [Related]  

  • 7. GaN-based ultraviolet light-emitting diodes with AlN/GaN/InGaN multiple quantum wells.
    Chang HM; Lai WC; Chen WS; Chang SJ
    Opt Express; 2015 Apr; 23(7):A337-45. PubMed ID: 25968799
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Influence of excitation power and temperature on photoluminescence in InGaN/GaN multiple quantum wells.
    Wang H; Ji Z; Qu S; Wang G; Jiang Y; Liu B; Xu X; Mino H
    Opt Express; 2012 Feb; 20(4):3932-40. PubMed ID: 22418149
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes.
    Jeong H; Jeong HJ; Oh HM; Hong CH; Suh EK; Lerondel G; Jeong MS
    Sci Rep; 2015 Mar; 5():9373. PubMed ID: 25792246
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Enhanced performance of InGaN/GaN multiple-quantum-well light-emitting diodes grown on nanoporous GaN layers.
    Lee KJ; Kim SJ; Kim JJ; Hwang K; Kim ST; Park SJ
    Opt Express; 2014 Jun; 22 Suppl 4():A1164-73. PubMed ID: 24978079
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Carrier Redistribution Between Two Kinds of Localized States in the InGaN/GaN Quantum Wells Studied by Photoluminescence.
    Xing Y; Zhao D; Jiang D; Liu Z; Zhu J; Chen P; Yang J; Liang F; Liu S; Zhang L
    Nanoscale Res Lett; 2019 Mar; 14(1):88. PubMed ID: 30874975
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Enhanced Light Emission due to Formation of Semi-polar InGaN/GaN Multi-quantum Wells.
    Zhao WR; Weng GE; Wang JY; Zhang JY; Liang HW; Sekiguchi T; Zhang BP
    Nanoscale Res Lett; 2015 Dec; 10(1):459. PubMed ID: 26625883
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Highly polarized photoluminescence from c-plane InGaN/GaN multiple quantum wells on stripe-shaped cavity-engineered sapphire substrate.
    Kim J; Lee S; Oh J; Ryu J; Park Y; Park SH; Yoon E
    Sci Rep; 2019 Jun; 9(1):8282. PubMed ID: 31164674
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Effect of carrier transfer process between two kinds of localized potential traps on the spectral properties of InGaN/GaN multiple quantum wells.
    Liu W; Zhao D; Jiang D; Shi D; Zhu J; Liu Z; Chen P; Yang J; Liang F; Liu S; Xing Y; Zhang L; Wang W; Li M; Zhang Y; Du G
    Opt Express; 2018 Feb; 26(3):3427-3434. PubMed ID: 29401870
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Optoelectrical characteristics of green light-emitting diodes containing thick InGaN wells with digitally grown InN/GaN.
    Yu CT; Lai WC; Yen CH; Hsu HC; Chang SJ
    Opt Express; 2014 May; 22 Suppl 3():A633-41. PubMed ID: 24922371
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Luminescence studies on green emitting InGaN/GaN MQWs implanted with nitrogen.
    Sousa MA; Esteves TC; Sedrine NB; Rodrigues J; Lourenço MB; Redondo-Cubero A; Alves E; O'Donnell KP; Bockowski M; Wetzel C; Correia MR; Lorenz K; Monteiro T
    Sci Rep; 2015 Apr; 5():9703. PubMed ID: 25853988
    [TBL] [Abstract][Full Text] [Related]  

  • 17. A Simulation Study of Carrier Capture Ability of the Last InGaN Quantum Well with Different Indium Content for Yellow-Light-Emitting InGaN/GaN Multiple Quantum Wells.
    Liu W; Liu Z; Zhao H; Gao J
    Micromachines (Basel); 2023 Aug; 14(9):. PubMed ID: 37763832
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Study of Well Width in InGaN/GaN Multiple Quantum Well Light-Emitting Diodes.
    Peng D; Tan C; Chen Z; Feng Z
    J Nanosci Nanotechnol; 2015 Jun; 15(6):4604-7. PubMed ID: 26369087
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Effect of hydrogen treatment temperature on the properties of InGaN/GaN multiple quantum wells.
    Zhu Y; Lu T; Zhou X; Zhao G; Dong H; Jia Z; Liu X; Xu B
    Nanoscale Res Lett; 2017 Dec; 12(1):321. PubMed ID: 28472870
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Influence of Low-Temperature Cap Layer Thickness on Luminescence Characteristics of Green InGaN/GaN Quantum Wells.
    Sun H; Chen Y; Ben Y; Zhang H; Zhao Y; Jin Z; Li G; Zhou M
    Materials (Basel); 2023 Feb; 16(4):. PubMed ID: 36837187
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 20.