These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
123 related articles for article (PubMed ID: 26260152)
1. Lattice Distortion in In3SbTe2 Phase Change Material with Substitutional Bi. Choi M; Choi H; Kim S; Ahn J; Kim YT Sci Rep; 2015 Aug; 5():12867. PubMed ID: 26260152 [TBL] [Abstract][Full Text] [Related]
2. Exploring ultrafast threshold switching in In Saxena N; Persch C; Wuttig M; Manivannan A Sci Rep; 2019 Dec; 9(1):19251. PubMed ID: 31848416 [TBL] [Abstract][Full Text] [Related]
3. Corrigendum: Lattice Distortion in In3SbTe2 Phase Change Material with Substitutional Bi. Choi M; Choi H; Kim S; Ahn J; Tae Kim Y Sci Rep; 2015 Oct; 5():14398. PubMed ID: 26423016 [No Abstract] [Full Text] [Related]
4. Broadband hyperbolic thermal metasurfaces based on the plasmonic phase-change material In Meng C; Zeng Y; Lu D; Zou H; Wang J; He Q; Yang X; Xu M; Miao X; Zhang X; Li P Nanoscale; 2023 Mar; 15(13):6306-6312. PubMed ID: 36912480 [TBL] [Abstract][Full Text] [Related]
5. Advantages of Ta-Doped Sb Shao M; Qiao Y; Xue Y; Song S; Song Z; Li X Nanomaterials (Basel); 2023 Feb; 13(4):. PubMed ID: 36839001 [TBL] [Abstract][Full Text] [Related]
6. Simulation study on heat conduction of a nanoscale phase-change random access memory cell. Kim J; Song KB J Nanosci Nanotechnol; 2006 Nov; 6(11):3474-8. PubMed ID: 17252792 [TBL] [Abstract][Full Text] [Related]
7. Ultra-low Energy Phase Change Memory with Improved Thermal Stability by Tailoring the Local Structure through Ag Doping. Hwang S; Park H; Kim D; Lim H; Lee C; Han JH; Kwon YK; Cho MH ACS Appl Mater Interfaces; 2020 Aug; 12(33):37285-37294. PubMed ID: 32697074 [TBL] [Abstract][Full Text] [Related]
8. Effect of Ti diffusion on the microstructure of Ge2Sb2Te5 in phase-change memory cell. Park J; Bae J Microscopy (Oxf); 2015 Dec; 64(6):381-6. PubMed ID: 26185146 [TBL] [Abstract][Full Text] [Related]
9. SiO2 doped Ge2Sb2Te5 thin films with high thermal efficiency for applications in phase change random access memory. Ryu SW; Lyeo HK; Lee JH; Ahn YB; Kim GH; Kim CH; Kim SG; Lee SH; Kim KY; Kim JH; Kim W; Hwang CS; Kim HJ Nanotechnology; 2011 Jun; 22(25):254005. PubMed ID: 21572208 [TBL] [Abstract][Full Text] [Related]
10. The Effect of Carbon Doping on the Crystal Structure and Electrical Properties of Sb Zhang J; Rong N; Xu P; Xiao Y; Lu A; Song W; Song S; Song Z; Liang Y; Wu L Nanomaterials (Basel); 2023 Feb; 13(4):. PubMed ID: 36839039 [TBL] [Abstract][Full Text] [Related]
11. Ultrafast switching in nanoscale phase-change random access memory with superlattice-like structures. Loke D; Shi L; Wang W; Zhao R; Yang H; Ng LT; Lim KG; Chong TC; Yeo YC Nanotechnology; 2011 Jun; 22(25):254019. PubMed ID: 21572204 [TBL] [Abstract][Full Text] [Related]
12. In Heßler A; Wahl S; Leuteritz T; Antonopoulos A; Stergianou C; Schön CF; Naumann L; Eicker N; Lewin M; Maß TWW; Wuttig M; Linden S; Taubner T Nat Commun; 2021 Feb; 12(1):924. PubMed ID: 33568636 [TBL] [Abstract][Full Text] [Related]
13. Structural diversity in supramolecular complexes of MCl(3) (M = As, Sb, Bi) with constrained thio- and seleno-ether ligands. Levason W; Maheshwari S; Ratnani R; Reid G; Webster M; Zhang W Inorg Chem; 2010 Oct; 49(19):9036-48. PubMed ID: 20812749 [TBL] [Abstract][Full Text] [Related]
14. Continuous programmable mid-infrared thermal emitter and camouflage based on the phase-change material In Zhou S; Guo Y; Zhu L; Liu Y; Pan Q; Shuai Y; Hu G Opt Lett; 2023 Aug; 48(16):4388-4391. PubMed ID: 37582039 [TBL] [Abstract][Full Text] [Related]
15. Structural properties of phase-change InSbTe thin films grown at a low temperature by metalorganic chemical vapor deposition. Ahn JK; Park KW; Hur SG; Kim CS; Lee JY; Yoon SG J Nanosci Nanotechnol; 2011 Jan; 11(1):189-94. PubMed ID: 21446425 [TBL] [Abstract][Full Text] [Related]
16. Y-Doped Sb Liu B; Liu W; Li Z; Li K; Wu L; Zhou J; Song Z; Sun Z ACS Appl Mater Interfaces; 2020 May; 12(18):20672-20679. PubMed ID: 32283921 [TBL] [Abstract][Full Text] [Related]
17. Effect of the Thermal Conductivity on Resistive Switching in GeTe and Ge2Sb2Te5 Nanowires. Park S; Park D; Jeong K; Kim T; Park S; Ahn M; Yang WJ; Han JH; Jeong HS; Jeon SG; Song JY; Cho MH ACS Appl Mater Interfaces; 2015 Oct; 7(39):21819-27. PubMed ID: 26369988 [TBL] [Abstract][Full Text] [Related]
18. Giant lattice expansion by quantum stress and universal atomic forces in semiconductors under instant ultrafast laser excitation. Chen NK; Han D; Li XB; Liu F; Bang J; Wang XP; Chen QD; Wang HY; Zhang S; Sun HB Phys Chem Chem Phys; 2017 Sep; 19(36):24735-24741. PubMed ID: 28861554 [TBL] [Abstract][Full Text] [Related]
19. Size effect of nano scale phase change random access memory. Son JH; Choi H; Jang N; Kim HS; Yi DY; Lee SH J Nanosci Nanotechnol; 2010 May; 10(5):3165-9. PubMed ID: 20358914 [TBL] [Abstract][Full Text] [Related]
20. One order of magnitude faster phase change at reduced power in Ti-Sb-Te. Zhu M; Xia M; Rao F; Li X; Wu L; Ji X; Lv S; Song Z; Feng S; Sun H; Zhang S Nat Commun; 2014 Jul; 5():4086. PubMed ID: 25001009 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]