599 related articles for article (PubMed ID: 26370537)
1. Nonvolatile Ferroelectric Memory Circuit Using Black Phosphorus Nanosheet-Based Field-Effect Transistors with P(VDF-TrFE) Polymer.
Lee YT; Kwon H; Kim JS; Kim HH; Lee YJ; Lim JA; Song YW; Yi Y; Choi WK; Hwang DK; Im S
ACS Nano; 2015 Oct; 9(10):10394-401. PubMed ID: 26370537
[TBL] [Abstract][Full Text] [Related]
2. Reliable Nonvolatile Memory Black Phosphorus Ferroelectric Field-Effect Transistors with van der Waals Buffer.
Yan S; Huang H; Xie Z; Ye G; Li XX; Taniguchi T; Watanabe K; Han Z; Chen X; Wang J; Chen JH
ACS Appl Mater Interfaces; 2019 Nov; 11(45):42358-42364. PubMed ID: 31633328
[TBL] [Abstract][Full Text] [Related]
3. Black Phosphorus/Ferroelectric P(VDF-TrFE) Field-Effect Transistors with High Mobility for Energy-Efficient Artificial Synapse in High-Accuracy Neuromorphic Computing.
Dang Z; Guo F; Duan H; Zhao Q; Fu Y; Jie W; Jin K; Hao J
Nano Lett; 2023 Jul; 23(14):6752-6759. PubMed ID: 37283505
[TBL] [Abstract][Full Text] [Related]
4. Low-Programmable-Voltage Nonvolatile Memory Devices Based on Omega-shaped Gate Organic Ferroelectric P(VDF-TrFE) Field Effect Transistors Using p-type Silicon Nanowire Channels.
Van NH; Lee JH; Whang D; Kang DJ
Nanomicro Lett; 2015; 7(1):35-41. PubMed ID: 30464954
[TBL] [Abstract][Full Text] [Related]
5. Ferroelectric Field-Effect Transistors Based on MoS
Si M; Liao PY; Qiu G; Duan Y; Ye PD
ACS Nano; 2018 Jul; 12(7):6700-6705. PubMed ID: 29944829
[TBL] [Abstract][Full Text] [Related]
6. Ferroelectric field-effect transistors for logic and in-situ memory applications.
Liu L; Hou X; Zhang H; Wang J; Zhou P
Nanotechnology; 2020 Jun; 31(42):424007. PubMed ID: 32599566
[TBL] [Abstract][Full Text] [Related]
7. The ambipolar evolution of a high-performance WSe
Li D; Wang X; Chen Y; Zhu S; Gong F; Wu G; Meng C; Liu L; Wang L; Lin T; Sun S; Shen H; Wang X; Hu W; Wang J; Sun J; Meng X; Chu J
Nanotechnology; 2018 Mar; 29(10):105202. PubMed ID: 29384728
[TBL] [Abstract][Full Text] [Related]
8. Thermal-dependent nonvolatile memory characteristics based on organic ferroelectric field-effect transistor.
Kim WH; Choi Y; Bae JH
J Nanosci Nanotechnol; 2013 Oct; 13(10):7080-2. PubMed ID: 24245196
[TBL] [Abstract][Full Text] [Related]
9. MoS
He X; Chow W; Liu F; Tay B; Liu Z
Small; 2017 Jan; 13(2):. PubMed ID: 27762499
[TBL] [Abstract][Full Text] [Related]
10. High-Performance C
Li C; Li L; Zhang F; Li Z; Zhu W; Dong L; Zhao J
ACS Appl Mater Interfaces; 2023 Apr; 15(13):16910-16917. PubMed ID: 36967661
[TBL] [Abstract][Full Text] [Related]
11. Controlled charge transport by polymer blend dielectrics in top-gate organic field-effect transistors for low-voltage-operating complementary circuits.
Baeg KJ; Khim D; Kim J; Han H; Jung SW; Kim TW; Kang M; Facchetti A; Hong SK; Kim DY; Noh YY
ACS Appl Mater Interfaces; 2012 Nov; 4(11):6176-84. PubMed ID: 23046095
[TBL] [Abstract][Full Text] [Related]
12. Ultralow-power non-volatile memory cells based on P(VDF-TrFE) ferroelectric-gate CMOS silicon nanowire channel field-effect transistors.
Van NH; Lee JH; Whang D; Kang DJ
Nanoscale; 2015 Jul; 7(27):11660-6. PubMed ID: 26098677
[TBL] [Abstract][Full Text] [Related]
13. Achieving high mobility, low-voltage operating organic field-effect transistor nonvolatile memory by an ultraviolet-ozone treating ferroelectric terpolymer.
Xiang L; Wang W; Xie W
Sci Rep; 2016 Nov; 6():36291. PubMed ID: 27824101
[TBL] [Abstract][Full Text] [Related]
14. A ferroelectric relaxor polymer-enhanced p-type WSe
Yin C; Wang X; Chen Y; Li D; Lin T; Sun S; Shen H; Du P; Sun J; Meng X; Chu J; Wong HF; Leung CW; Wang Z; Wang J
Nanoscale; 2018 Jan; 10(4):1727-1734. PubMed ID: 29308498
[TBL] [Abstract][Full Text] [Related]
15. Solvent vapor annealing of ferroelectric P(VDF-TrFE) thin films.
Hu J; Zhang J; Fu Z; Jiang Y; Ding S; Zhu G
ACS Appl Mater Interfaces; 2014 Oct; 6(20):18312-8. PubMed ID: 25243461
[TBL] [Abstract][Full Text] [Related]
16. Organic Ferroelectric-Based 1T1T Random Access Memory Cell Employing a Common Dielectric Layer Overcoming the Half-Selection Problem.
Zhao Q; Wang H; Ni Z; Liu J; Zhen Y; Zhang X; Jiang L; Li R; Dong H; Hu W
Adv Mater; 2017 Sep; 29(34):. PubMed ID: 28692748
[TBL] [Abstract][Full Text] [Related]
17. Ferroelectric-mediated filamentary resistive switching in P(VDF-TrFE)/ZnO nanocomposite films.
Kim TY; Anoop G; Son YJ; Kim SH; Lee E; Jo JY
Phys Chem Chem Phys; 2018 Jun; 20(23):16176-16183. PubMed ID: 29862403
[TBL] [Abstract][Full Text] [Related]
18. Controllable Hysteresis and Threshold Voltage of Single-Walled Carbon Nano-tube Transistors with Ferroelectric Polymer Top-Gate Insulators.
Sun YL; Xie D; Xu JL; Zhang C; Dai RX; Li X; Meng XJ; Zhu HW
Sci Rep; 2016 Mar; 6():23090. PubMed ID: 26980284
[TBL] [Abstract][Full Text] [Related]
19. Optoelectronic Properties of Few-Layer MoS
Chen Y; Wang X; Wang P; Huang H; Wu G; Tian B; Hong Z; Wang Y; Sun S; Shen H; Wang J; Hu W; Sun J; Meng X; Chu J
ACS Appl Mater Interfaces; 2016 Nov; 8(47):32083-32088. PubMed ID: 27801569
[TBL] [Abstract][Full Text] [Related]
20. Junctionless ferroelectric field effect transistors based on ultrathin silicon nanomembranes.
Cao R; Huang G; Di Z; Zhu G; Mei Y
Nanoscale Res Lett; 2014 Dec; 9(1):2412. PubMed ID: 26088987
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]