468 related articles for article (PubMed ID: 26373092)
1. Effect of Sapphire Substrate Thickness on the Characteristics of 450 nm InGaN/GaN Multi-Quantum Well Light-Emitting Diodes.
Tawfik WZ; Bea SJ; Yang SB; Ryu SW; Lee JK
J Nanosci Nanotechnol; 2015 Jul; 15(7):5140-3. PubMed ID: 26373092
[TBL] [Abstract][Full Text] [Related]
2. Efficient Semipolar (11-22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11-22) GaN/Sapphire Templates.
Li H; Khoury M; Bonef B; Alhassan AI; Mughal AJ; Azimah E; Samsudin MEA; De Mierry P; Nakamura S; Speck JS; DenBaars SP
ACS Appl Mater Interfaces; 2017 Oct; 9(41):36417-36422. PubMed ID: 28960058
[TBL] [Abstract][Full Text] [Related]
3. GaN-based ultraviolet light-emitting diodes with AlN/GaN/InGaN multiple quantum wells.
Chang HM; Lai WC; Chen WS; Chang SJ
Opt Express; 2015 Apr; 23(7):A337-45. PubMed ID: 25968799
[TBL] [Abstract][Full Text] [Related]
4. [Optical characteristics of InGaN/GaN light emitting diodes on patterned sapphire substrate].
Yan J; Zhong CT; Yu TJ; Xu CL; Tao YB; Zhang GY
Guang Pu Xue Yu Guang Pu Fen Xi; 2012 Jan; 32(1):7-10. PubMed ID: 22497115
[TBL] [Abstract][Full Text] [Related]
5. InGaN-Based Light-Emitting Diodes Grown on a Micro/Nanoscale Hybrid Patterned Sapphire Substrate.
Ke WC; Lee FW; Chiang CY; Liang ZY; Chen WK; Seong TY
ACS Appl Mater Interfaces; 2016 Dec; 8(50):34520-34529. PubMed ID: 27998131
[TBL] [Abstract][Full Text] [Related]
6. Improved light extraction efficiency of InGaN-based multi-quantum well light emitting diodes by using a single die growth.
Park MJ; Kwon KW; Kim YH; Park SH; Kwak JS
J Nanosci Nanotechnol; 2011 May; 11(5):4484-7. PubMed ID: 21780482
[TBL] [Abstract][Full Text] [Related]
7. Numerical Analysis of the Temperature Impact on Performance of GaN-Based 460-nm Light-Emitting Diode.
Tawfik WZ; Lee JK
J Nanosci Nanotechnol; 2018 Mar; 18(3):1772-1776. PubMed ID: 29448657
[TBL] [Abstract][Full Text] [Related]
8. Vertical InGaN light-emitting diodes with a sapphire-face-up structure.
Yang YC; Sheu JK; Lee ML; Tu SJ; Huang FW; Lai WC; Hon S; Ko TK
Opt Express; 2012 Jan; 20(1):A119-24. PubMed ID: 22379672
[TBL] [Abstract][Full Text] [Related]
9. Optical characteristics of InGaN/GaN light-emitting diodes depending on wafer bowing controlled by laser-treated grid patterns.
Lee K; Lee CR; Chung TH; Kim YS; Jeong KU; Kim JS
Opt Express; 2016 Oct; 24(21):24153-24160. PubMed ID: 27828246
[TBL] [Abstract][Full Text] [Related]
10. Effect of strain relaxation on performance of InGaN/GaN green LEDs grown on 4-inch sapphire substrate with sputtered AlN nucleation layer.
Hu H; Zhou S; Wan H; Liu X; Li N; Xu H
Sci Rep; 2019 Mar; 9(1):3447. PubMed ID: 30837579
[TBL] [Abstract][Full Text] [Related]
11. External stress effects on the optical and electrical properties of flexible InGaN-based green light-emitting diodes.
Horng RH; Tien CH; Chuang SH; Liu KC; Wuu DS
Opt Express; 2015 Nov; 23(24):31334-41. PubMed ID: 26698760
[TBL] [Abstract][Full Text] [Related]
12. The effect of free-standing GaN substrate on carrier localization in ultraviolet InGaN light-emitting diodes.
Tsai MT; Chu CM; Huang CH; Wu YH; Chiu CH; Li ZY; Tu PM; Lee WI; Kuo HC
Nanoscale Res Lett; 2014 Dec; 9(1):2418. PubMed ID: 26088993
[TBL] [Abstract][Full Text] [Related]
13. Enhanced electroluminescence of a-plane InGaN light emitting diodes grown on oxide-patterned r-plane sapphire substrates.
Hwang SM; Song H; Seo YG; Son JS; Kim J; Baik KH
Opt Express; 2011 Nov; 19(23):23036-41. PubMed ID: 22109183
[TBL] [Abstract][Full Text] [Related]
14. GaN-based photon-recycling green light-emitting diodes with vertical-conduction structure.
Sheu JK; Chen FB; Yen WY; Wang YC; Liu CN; Yeh YH; Lee ML
Opt Express; 2015 Apr; 23(7):A371-81. PubMed ID: 25968802
[TBL] [Abstract][Full Text] [Related]
15. Enhanced optical output in InGaN/GaN light-emitting diodes by tailored refractive index of nanoporous GaN.
Lee KJ; Oh S; Kim SJ; Yim SY; Myoung N; Lee K; Kim JS; Jung SH; Chung TH; Park SJ
Nanotechnology; 2019 Oct; 30(41):415301. PubMed ID: 31300618
[TBL] [Abstract][Full Text] [Related]
16. Light-extraction efficiency control in AlGaN-based deep-ultraviolet flip-chip light-emitting diodes: a comparison to InGaN-based visible flip-chip light-emitting diodes.
Lee KH; Park HJ; Kim SH; Asadirad M; Moon YT; Kwak JS; Ryou JH
Opt Express; 2015 Aug; 23(16):20340-9. PubMed ID: 26367889
[TBL] [Abstract][Full Text] [Related]
17. High performance electron blocking layer-free InGaN/GaN nanowire white-light-emitting diodes.
Jain B; Velpula RT; Thang Bui HQ; Nguyen HD; Lenka TR; Nguyen TK; Nguyen HPT
Opt Express; 2020 Jan; 28(1):665-675. PubMed ID: 32118989
[TBL] [Abstract][Full Text] [Related]
18. Stacked GaN/AlN last quantum barrier for high-efficiency InGaN-based green light-emitting diodes.
Tao G; Zhao X; Zhou S
Opt Lett; 2021 Sep; 46(18):4593-4596. PubMed ID: 34525055
[TBL] [Abstract][Full Text] [Related]
19. InGaN light emitting diodes with a laser-treated tapered GaN structure.
Huang WC; Lin CF; Hsieh TH; Chen SH; Lin MS; Chen KT; Lin CM; Chen SH; Han P
Opt Express; 2011 Sep; 19 Suppl 5():A1126-34. PubMed ID: 21935255
[TBL] [Abstract][Full Text] [Related]
20. Performance investigation of GaN-based light-emitting diodes with tiny misorientation of sapphire substrates.
Liu YJ; Tsai TY; Yen CH; Chen LY; Tsai TH; Huang CC; Chen TY; Hsu CH; Liu WC
Opt Express; 2010 Feb; 18(3):2729-42. PubMed ID: 20174102
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]