These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

322 related articles for article (PubMed ID: 26373120)

  • 1. Comparison of Strain in GaN-Based Blue Light-Emitting Diode Grown on Silicon(111) and Sapphire Substrates.
    Jeon KS; Sung JH; Lee MW; Song HY; Lee EA; Kim SO; Choi HJ; Shin HY; Park WH; Jang YI; Kang MG; Choi YH; Lee JS; Ko DH; Ryu HY
    J Nanosci Nanotechnol; 2015 Jul; 15(7):5264-6. PubMed ID: 26373120
    [TBL] [Abstract][Full Text] [Related]  

  • 2. A Study of Piezoelectric Field Related Strain Difference in GaN-Based Blue Light-Emitting Diodes Grown on Silicon(111) and Sapphire Substrates.
    Jeon KS; Sung JH; Lee MW; Song HY; Shin HY; Park WH; Jang YI; Kang MG; Choi YH; Lee JS; Ko DH; Ryu HY
    J Nanosci Nanotechnol; 2016 Feb; 16(2):1798-801. PubMed ID: 27433673
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Optimal Silicon Doping Layers of Quantum Barriers in the Growth Sequence Forming Soft Confinement Potential of Eight-Period In
    Wang HC; Chen MC; Lin YS; Lu MY; Lin KI; Cheng YC
    Nanoscale Res Lett; 2017 Nov; 12(1):591. PubMed ID: 29124372
    [TBL] [Abstract][Full Text] [Related]  

  • 4. A comparative study of efficiency droop and internal electric field for InGaN blue lighting-emitting diodes on silicon and sapphire substrates.
    Ryu HY; Jeon KS; Kang MG; Yuh HK; Choi YH; Lee JS
    Sci Rep; 2017 Apr; 7():44814. PubMed ID: 28401941
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Effect of strain relaxation on performance of InGaN/GaN green LEDs grown on 4-inch sapphire substrate with sputtered AlN nucleation layer.
    Hu H; Zhou S; Wan H; Liu X; Li N; Xu H
    Sci Rep; 2019 Mar; 9(1):3447. PubMed ID: 30837579
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Influence of patterned sapphire substrates with different symmetry on the light output power of InGaN-based LEDs.
    You YH; Su VC; Ho TE; Lin BW; Lee ML; Das A; Hsu WC; Kuan CH; Lin RM
    Nanoscale Res Lett; 2014; 9(1):596. PubMed ID: 25392706
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Analysis of light extraction efficiency enhancement for thin-film-flip-chip InGaN quantum wells light-emitting diodes with GaN micro-domes.
    Zhao P; Zhao H
    Opt Express; 2012 Sep; 20 Suppl 5():A765-76. PubMed ID: 23037543
    [TBL] [Abstract][Full Text] [Related]  

  • 8. [Optical characteristics of InGaN/GaN light emitting diodes on patterned sapphire substrate].
    Yan J; Zhong CT; Yu TJ; Xu CL; Tao YB; Zhang GY
    Guang Pu Xue Yu Guang Pu Fen Xi; 2012 Jan; 32(1):7-10. PubMed ID: 22497115
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Direct Observation of the Biaxial Stress Effect on Efficiency Droop in GaN-based Light-emitting Diode under Electrical Injection.
    Zheng J; Li S; Chou C; Lin W; Xun F; Guo F; Zheng T; Li S; Kang J
    Sci Rep; 2015 Dec; 5():17227. PubMed ID: 26634816
    [TBL] [Abstract][Full Text] [Related]  

  • 10. GaN-based photon-recycling green light-emitting diodes with vertical-conduction structure.
    Sheu JK; Chen FB; Yen WY; Wang YC; Liu CN; Yeh YH; Lee ML
    Opt Express; 2015 Apr; 23(7):A371-81. PubMed ID: 25968802
    [TBL] [Abstract][Full Text] [Related]  

  • 11. High performance electron blocking layer-free InGaN/GaN nanowire white-light-emitting diodes.
    Jain B; Velpula RT; Thang Bui HQ; Nguyen HD; Lenka TR; Nguyen TK; Nguyen HPT
    Opt Express; 2020 Jan; 28(1):665-675. PubMed ID: 32118989
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Enhanced performance of InGaN/GaN multiple-quantum-well light-emitting diodes grown on nanoporous GaN layers.
    Lee KJ; Kim SJ; Kim JJ; Hwang K; Kim ST; Park SJ
    Opt Express; 2014 Jun; 22 Suppl 4():A1164-73. PubMed ID: 24978079
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Comparative Raman and HRTEM study of nanostructured GaN nucleation layers and device layers on sapphire (0001).
    Pant P; Narayan J; Wushuer A; Manghnani MH
    J Nanosci Nanotechnol; 2008 Nov; 8(11):5985-92. PubMed ID: 19198336
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Enhanced optical output power of InGaN/GaN light-emitting diodes grown on a silicon (111) substrate with a nanoporous GaN layer.
    Lee KJ; Chun J; Kim SJ; Oh S; Ha CS; Park JW; Lee SJ; Song JC; Baek JH; Park SJ
    Opt Express; 2016 Mar; 24(5):4391-4398. PubMed ID: 29092267
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Improving modulation bandwidth of c-plane GaN-based light-emitting diodes by an ultra-thin quantum wells design.
    Rajabi K; Wang J; Jin J; Xing Y; Wang L; Han Y; Sun C; Hao Z; Luo Y; Qian K; Chen CJ; Wu MC
    Opt Express; 2018 Sep; 26(19):24985-24991. PubMed ID: 30469606
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Optoelectronic Performance Variations in InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes: Effects of Potential Fluctuation.
    Islam ABMH; Shim JI; Shin DS
    Materials (Basel); 2018 May; 11(5):. PubMed ID: 29735933
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Recent Advances in Nonpolar and Semipolar InGaN Light-Emitting Diodes (LEDs).
    Jang J; Woo S; Min D; Nam O
    J Nanosci Nanotechnol; 2015 Mar; 15(3):1895-906. PubMed ID: 26413605
    [TBL] [Abstract][Full Text] [Related]  

  • 18. InGaN-Based Light-Emitting Diodes Grown on a Micro/Nanoscale Hybrid Patterned Sapphire Substrate.
    Ke WC; Lee FW; Chiang CY; Liang ZY; Chen WK; Seong TY
    ACS Appl Mater Interfaces; 2016 Dec; 8(50):34520-34529. PubMed ID: 27998131
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Enhanced optical output in InGaN/GaN light-emitting diodes by tailored refractive index of nanoporous GaN.
    Lee KJ; Oh S; Kim SJ; Yim SY; Myoung N; Lee K; Kim JS; Jung SH; Chung TH; Park SJ
    Nanotechnology; 2019 Oct; 30(41):415301. PubMed ID: 31300618
    [TBL] [Abstract][Full Text] [Related]  

  • 20. The effect of free-standing GaN substrate on carrier localization in ultraviolet InGaN light-emitting diodes.
    Tsai MT; Chu CM; Huang CH; Wu YH; Chiu CH; Li ZY; Tu PM; Lee WI; Kuo HC
    Nanoscale Res Lett; 2014 Dec; 9(1):2418. PubMed ID: 26088993
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 17.