122 related articles for article (PubMed ID: 26505027)
1. Charge Carrier Transport Mechanism Based on Stable Low Voltage Organic Bistable Memory Device.
Ramana VV; Moodley MK; Kumar AB; Kannan V
J Nanosci Nanotechnol; 2015 May; 15(5):3934-8. PubMed ID: 26505027
[TBL] [Abstract][Full Text] [Related]
2. Flexible resistive switching bistable memory devices using ZnO nanoparticles embedded in polyvinyl alcohol (PVA) matrix and poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS).
Hmar JJL
RSC Adv; 2018 May; 8(36):20423-20433. PubMed ID: 35541659
[TBL] [Abstract][Full Text] [Related]
3. Carrier transport in flexible organic bistable devices of ZnO nanoparticles embedded in an insulating poly(methyl methacrylate) polymer layer.
Son DI; Park DH; Choi WK; Cho SH; Kim WT; Kim TW
Nanotechnology; 2009 May; 20(19):195203. PubMed ID: 19420634
[TBL] [Abstract][Full Text] [Related]
4. Improved Memory Effect of ZnO Nanorods Embedded in an Insulating Polymethylmethacrylate Layer.
Valanarasu S; Kathaiingam A; Rhee JK; Chandramohan R; Vijayan TA; Karunakaran M
J Nanosci Nanotechnol; 2015 Feb; 15(2):1416-20. PubMed ID: 26353665
[TBL] [Abstract][Full Text] [Related]
5. Carrier transport mechanisms of the writing and the erasing processes for Al/ZnO nanoparticles embedded in a polymethyl methacrylate layer/C60/p-Si diodes.
Li F; Cho SW; Park KH; Son DI; Kim TW
J Nanosci Nanotechnol; 2010 Jul; 10(7):4721-4. PubMed ID: 21128486
[TBL] [Abstract][Full Text] [Related]
6. Electrical bistabilities and memory mechanisms of organic bistable devices fabricated utilizing SnO2 nanoparticles embedded in a poly(methyl methacrylate) layer.
Kwak JK; Yun DY; Son DI; Jung JH; Lee DU; Kim TW
J Nanosci Nanotechnol; 2010 Nov; 10(11):7735-8. PubMed ID: 21138021
[TBL] [Abstract][Full Text] [Related]
7. Operating mechanisms of organic bistable devices containing ZnO nanoparticles embedded in a poly-4-vinyl-phenol layer.
Park KH; Li F; Jung JH; Son DI; Cho SW; Kim TW
J Nanosci Nanotechnol; 2010 Jul; 10(7):4801-4. PubMed ID: 21128503
[TBL] [Abstract][Full Text] [Related]
8. Enhancement of memory margins in the polymer composite of [6,6]-phenyl-C
Sun Y; Lu J; Ai C; Wen D; Bai X
Phys Chem Chem Phys; 2016 Nov; 18(44):30808-30814. PubMed ID: 27801477
[TBL] [Abstract][Full Text] [Related]
9. Electrical bistabilities and memory stabilities of nonvolatile bistable devices fabricated utilizing C(60) molecules embedded in a polymethyl methacrylate layer.
Cho SH; Lee DI; Jung JH; Kim TW
Nanotechnology; 2009 Aug; 20(34):345204. PubMed ID: 19652271
[TBL] [Abstract][Full Text] [Related]
10. Flexible organic bistable devices based on graphene embedded in an insulating poly(methyl methacrylate) polymer layer.
Son DI; Kim TW; Shim JH; Jung JH; Lee DU; Lee JM; Park WI; Choi WK
Nano Lett; 2010 Jul; 10(7):2441-7. PubMed ID: 20504010
[TBL] [Abstract][Full Text] [Related]
11. Highly flexible and stable resistive switching devices based on WS
Lee JH; Wu C; Sung S; An H; Kim TW
Sci Rep; 2019 Dec; 9(1):19316. PubMed ID: 31848387
[TBL] [Abstract][Full Text] [Related]
12. Effect of the ZnS Shell Layer on the Electrical Properties of Organic Bistable Devices Fabricated Utilizing CdSe/CdS/ZnS Core-Shell-Shell Quantum Dots Embedded in a Poly(methylmethacrylate) Layer.
Lee NH; Yun DY; Choi DH; Kim SW; Kim TW
J Nanosci Nanotechnol; 2016 Jun; 16(6):6271-4. PubMed ID: 27427701
[TBL] [Abstract][Full Text] [Related]
13. High-performance memory device using graphene oxide flakes sandwiched polymethylmethacrylate layers.
Valanarasu S; Kulandaisamy I; Kathalingam A; Rhee JK; Vijayan TA; Chandramohan R
J Nanosci Nanotechnol; 2013 Oct; 13(10):6755-9. PubMed ID: 24245139
[TBL] [Abstract][Full Text] [Related]
14. Enhanced resistive switching performance in yttrium-doped CH
Luo F; Ruan L; Tong J; Wu Y; Sun C; Qin G; Tian F; Zhang X
Phys Chem Chem Phys; 2021 Oct; 23(38):21757-21768. PubMed ID: 34550133
[TBL] [Abstract][Full Text] [Related]
15. Resistive Memory-Switching Behavior in Solution-Processed Trans, trans-1,4-bis-(2-(2-naphthyl)-2-(butoxycarbonyl)-vinyl) Benzene-PVA-Composite-Based Aryl Acrylate on ITO-Coated PET.
Kamath R; Sarkar P; Melanthota SK; Biswas R; Mazumder N; De S
Polymers (Basel); 2024 Jan; 16(2):. PubMed ID: 38257018
[TBL] [Abstract][Full Text] [Related]
16. Graphene Oxide as a Dielectric and Charge Trap Element in Pentacene-Based Organic Thin-Film Transistors for Nonvolatile Memory.
Sarkar KJ; Pal B; Banerji P
ACS Omega; 2019 Feb; 4(2):4312-4319. PubMed ID: 31459636
[TBL] [Abstract][Full Text] [Related]
17. Reliable and Low-Power Multilevel Resistive Switching in TiO
Xiao M; Musselman KP; Duley WW; Zhou YN
ACS Appl Mater Interfaces; 2017 Feb; 9(5):4808-4817. PubMed ID: 28098978
[TBL] [Abstract][Full Text] [Related]
18. ZnO/NiO diode-based charge-trapping layer for flash memory featuring low-voltage operation.
Sun CE; Chen CY; Chu KL; Shen YS; Lin CC; Wu YH
ACS Appl Mater Interfaces; 2015 Apr; 7(12):6383-90. PubMed ID: 25781005
[TBL] [Abstract][Full Text] [Related]
19. Polymer-ultrathin graphite sheet-polymer composite structured flexible nonvolatile bistable organic memory devices.
Son DI; Shim JH; Park DH; Jung JH; Lee JM; Park WI; Kim TW; Choi WK
Nanotechnology; 2011 Jul; 22(29):295203. PubMed ID: 21685558
[TBL] [Abstract][Full Text] [Related]
20. Improving the characteristics of an organic nano floating gate memory by a self-assembled monolayer.
Chang HC; Lee WY; Tai Y; Wu KW; Chen WC
Nanoscale; 2012 Oct; 4(20):6629-36. PubMed ID: 22983559
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
