These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

152 related articles for article (PubMed ID: 26524388)

  • 1. High-Current Gain Two-Dimensional MoS₂-Base Hot-Electron Transistors.
    Torres CM; Lan YW; Zeng C; Chen JH; Kou X; Navabi A; Tang J; Montazeri M; Adleman JR; Lerner MB; Zhong YL; Li LJ; Chen CD; Wang KL
    Nano Lett; 2015 Dec; 15(12):7905-12. PubMed ID: 26524388
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Dual-mode operation of 2D material-base hot electron transistors.
    Lan YW; Torres CM; Zhu X; Qasem H; Adleman JR; Lerner MB; Tsai SH; Shi Y; Li LJ; Yeh WK; Wang KL
    Sci Rep; 2016 Sep; 6():32503. PubMed ID: 27581550
    [TBL] [Abstract][Full Text] [Related]  

  • 3. High-Frequency Graphene Base Hot-Electron Transistor.
    Liang BW; Chang WH; Lin HY; Chen PC; Zhang YT; Simbulan KB; Li KS; Chen JH; Kuan CH; Lan YW
    ACS Nano; 2021 Apr; 15(4):6756-6764. PubMed ID: 33734665
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Electron Transport across Vertical Silicon/MoS
    Belete M; Engström O; Vaziri S; Lippert G; Lukosius M; Kataria S; Lemme MC
    ACS Appl Mater Interfaces; 2020 Feb; 12(8):9656-9663. PubMed ID: 31999091
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Vertical graphene-base hot-electron transistor.
    Zeng C; Song EB; Wang M; Lee S; Torres CM; Tang J; Weiller BH; Wang KL
    Nano Lett; 2013 Jun; 13(6):2370-5. PubMed ID: 23668939
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Gate Tunable Transport in Graphene/MoS₂/(Cr/Au) Vertical Field-Effect Transistors.
    Nazir G; Khan MF; Aftab S; Afzal AM; Dastgeer G; Rehman MA; Seo Y; Eom J
    Nanomaterials (Basel); 2017 Dec; 8(1):. PubMed ID: 29283377
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Hot Electron Transistor with van der Waals Base-Collector Heterojunction and High-Performance GaN Emitter.
    Zubair A; Nourbakhsh A; Hong JY; Qi M; Song Y; Jena D; Kong J; Dresselhaus M; Palacios T
    Nano Lett; 2017 May; 17(5):3089-3096. PubMed ID: 28414241
    [TBL] [Abstract][Full Text] [Related]  

  • 8. MoS
    He X; Chow W; Liu F; Tay B; Liu Z
    Small; 2017 Jan; 13(2):. PubMed ID: 27762499
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Realization of High Current Gain for Van der Waals MoS
    Yan Z; Xu N; Deng S
    Nanomaterials (Basel); 2024 Apr; 14(8):. PubMed ID: 38668212
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Approaching the Collection Limit in Hot Electron Transistors with Ambipolar Hot Carrier Transport.
    Liu W; Li L; Guo H; Qadir A; Bodepudi SC; Shehzad K; Chen W; Xie YH; Wang X; Yu B; Xu Y
    ACS Nano; 2019 Dec; 13(12):14191-14197. PubMed ID: 31755701
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Low-Voltage and High-Performance Multilayer MoS
    Singh AK; Hwang C; Eom J
    ACS Appl Mater Interfaces; 2016 Dec; 8(50):34699-34705. PubMed ID: 27998114
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Graphene/MoS2 hybrid technology for large-scale two-dimensional electronics.
    Yu L; Lee YH; Ling X; Santos EJ; Shin YC; Lin Y; Dubey M; Kaxiras E; Kong J; Wang H; Palacios T
    Nano Lett; 2014 Jun; 14(6):3055-63. PubMed ID: 24810658
    [TBL] [Abstract][Full Text] [Related]  

  • 13. MoS2 transistors operating at gigahertz frequencies.
    Krasnozhon D; Lembke D; Nyffeler C; Leblebici Y; Kis A
    Nano Lett; 2014 Oct; 14(10):5905-11. PubMed ID: 25243885
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Vertical versus Lateral Two-Dimensional Heterostructures: On the Topic of Atomically Abrupt p/n-Junctions.
    Zhou R; Ostwal V; Appenzeller J
    Nano Lett; 2017 Aug; 17(8):4787-4792. PubMed ID: 28718653
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Heteroepitaxial vertical perovskite hot-electron transistors down to the monolayer limit.
    Kim BSY; Hikita Y; Yajima T; Hwang HY
    Nat Commun; 2019 Nov; 10(1):5312. PubMed ID: 31757949
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Low-frequency noise in bilayer MoS(2) transistor.
    Xie X; Sarkar D; Liu W; Kang J; Marinov O; Deen MJ; Banerjee K
    ACS Nano; 2014 Jun; 8(6):5633-40. PubMed ID: 24708223
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Impact of Contact on the Operation and Performance of Back-Gated Monolayer MoS2 Field-Effect-Transistors.
    Liu W; Sarkar D; Kang J; Cao W; Banerjee K
    ACS Nano; 2015 Aug; 9(8):7904-12. PubMed ID: 26039221
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Transition metal chalcogenides: ultrathin inorganic materials with tunable electronic properties.
    Heine T
    Acc Chem Res; 2015 Jan; 48(1):65-72. PubMed ID: 25489917
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Two-Dimensional Cold Electron Transport for Steep-Slope Transistors.
    Liu M; Jaiswal HN; Shahi S; Wei S; Fu Y; Chang C; Chakravarty A; Liu X; Yang C; Liu Y; Lee YH; Perebeinos V; Yao F; Li H
    ACS Nano; 2021 Mar; 15(3):5762-5772. PubMed ID: 33705651
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Atomically thin van der Waals tunnel field-effect transistors and its potential for applications.
    Yang SH; Yao YT; Xu Y; Lin CY; Chang YM; Suen YW; Sun H; Lien CH; Li W; Lin YF
    Nanotechnology; 2019 Mar; 30(10):105201. PubMed ID: 30530943
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 8.