196 related articles for article (PubMed ID: 26645358)
1. High-efficiency bulk heterojunction memory devices fabricated using organometallic halide perovskite:poly(N-vinylcarbazole) blend active layers.
Wang C; Chen Y; Zhang B; Liu S; Chen Q; Cao Y; Sun S
Dalton Trans; 2016 Jan; 45(2):484-8. PubMed ID: 26645358
[TBL] [Abstract][Full Text] [Related]
2. Electrical Conductance Tuning and Bistable Switching in Poly(N-vinylcarbazole)-Carbon Nanotube Composite Films.
Liu G; Ling QD; Teo EY; Zhu CX; Chan DS; Neoh KG; Kang ET
ACS Nano; 2009 Jul; 3(7):1929-37. PubMed ID: 19485330
[TBL] [Abstract][Full Text] [Related]
3. Nonvolatile polymer memory device based on bistable electrical switching in a thin film of poly(N-vinylcarbazole) with covalently bonded C60.
Ling QD; Lim SL; Song Y; Zhu CX; Chan DS; Kang ET; Neoh KG
Langmuir; 2007 Jan; 23(1):312-9. PubMed ID: 17190520
[TBL] [Abstract][Full Text] [Related]
4. Solution-processable poly(N-vinylcarbazole)-covalently grafted MoS
Fan F; Zhang B; Cao Y; Chen Y
Nanoscale; 2017 Feb; 9(7):2449-2456. PubMed ID: 28177014
[TBL] [Abstract][Full Text] [Related]
5. Bulk heterojunction polymer memory devices with reduced graphene oxide as electrodes.
Liu J; Yin Z; Cao X; Zhao F; Lin A; Xie L; Fan Q; Boey F; Zhang H; Huang W
ACS Nano; 2010 Jul; 4(7):3987-92. PubMed ID: 20540553
[TBL] [Abstract][Full Text] [Related]
6. Tunable electrical memory characteristics using polyimide:polycyclic aromatic compound blends on flexible substrates.
Yu AD; Kurosawa T; Chou YH; Aoyagi K; Shoji Y; Higashihara T; Ueda M; Liu CL; Chen WC
ACS Appl Mater Interfaces; 2013 Jun; 5(11):4921-9. PubMed ID: 23646879
[TBL] [Abstract][Full Text] [Related]
7. Reset Voltage-Dependent Multilevel Resistive Switching Behavior in CsPb
Ge S; Wang Y; Xiang Z; Cui Y
ACS Appl Mater Interfaces; 2018 Jul; 10(29):24620-24626. PubMed ID: 29969009
[TBL] [Abstract][Full Text] [Related]
8. Filament theory based WORM memory devices using aluminum/poly(9-vinylcarbazole)/aluminum structures.
Suresh A; Krishnakumar G; Namboothiry MA
Phys Chem Chem Phys; 2014 Jul; 16(26):13074-7. PubMed ID: 24888392
[TBL] [Abstract][Full Text] [Related]
9. Nonvolatile flexible organic bistable devices fabricated utilizing CdSe/ZnS nanoparticles embedded in a conducting poly N-vinylcarbazole polymer layer.
Son DI; Kim JH; Park DH; Choi WK; Li F; Ham JH; Kim TW
Nanotechnology; 2008 Feb; 19(5):055204. PubMed ID: 21817602
[TBL] [Abstract][Full Text] [Related]
10. Conductivity switching and electronic memory effect in polymers with pendant azobenzene chromophores.
Lim SL; Li NJ; Lu JM; Ling QD; Zhu CX; Kang ET; Neoh KG
ACS Appl Mater Interfaces; 2009 Jan; 1(1):60-71. PubMed ID: 20355755
[TBL] [Abstract][Full Text] [Related]
11. Induced Vacancy-Assisted Filamentary Resistive Switching Device Based on RbPbI
Das U; Das D; Paul B; Rabha T; Pattanayak S; Kanjilal A; Bhattacharjee S; Sarkar P; Roy A
ACS Appl Mater Interfaces; 2020 Sep; 12(37):41718-41727. PubMed ID: 32830960
[TBL] [Abstract][Full Text] [Related]
12. Enhanced resistive switching performance in yttrium-doped CH
Luo F; Ruan L; Tong J; Wu Y; Sun C; Qin G; Tian F; Zhang X
Phys Chem Chem Phys; 2021 Oct; 23(38):21757-21768. PubMed ID: 34550133
[TBL] [Abstract][Full Text] [Related]
13. High voltage and efficient bilayer heterojunction solar cells based on an organic-inorganic hybrid perovskite absorber with a low-cost flexible substrate.
Chiang YF; Jeng JY; Lee MH; Peng SR; Chen P; Guo TF; Wen TC; Hsu YJ; Hsu CM
Phys Chem Chem Phys; 2014 Apr; 16(13):6033-40. PubMed ID: 24553998
[TBL] [Abstract][Full Text] [Related]
14. Effect of halide-mixing on the switching behaviors of organic-inorganic hybrid perovskite memory.
Hwang B; Gu C; Lee D; Lee JS
Sci Rep; 2017 Mar; 7():43794. PubMed ID: 28272547
[TBL] [Abstract][Full Text] [Related]
15. Charging and discharging mechanisms of organic bistable devices based on ZnO nanoparticles capped with a poly N-vinylcarbazole polymer.
Son DI; Oh DH; Jung JH; Kim TW
J Nanosci Nanotechnol; 2011 Jan; 11(1):711-5. PubMed ID: 21446529
[TBL] [Abstract][Full Text] [Related]
16. Flexible conductive-bridging random-access-memory cell vertically stacked with top Ag electrode, PEO, PVK, and bottom Pt electrode.
Seung HM; Kwon KC; Lee GS; Park JG
Nanotechnology; 2014 Oct; 25(43):435204. PubMed ID: 25297517
[TBL] [Abstract][Full Text] [Related]
17. In situ synthesis and nonvolatile rewritable-memory effect of polyaniline-functionalized graphene oxide.
Zhang B; Chen Y; Ren Y; Xu LQ; Liu G; Kang ET; Wang C; Zhu CX; Neoh KG
Chemistry; 2013 May; 19(20):6265-73. PubMed ID: 23494813
[TBL] [Abstract][Full Text] [Related]
18. Improving Memory Performances by Adjusting the Symmetry and Polarity of O-Fluoroazobenzene-Based Molecules.
Liu Q; Dong H; Li Y; Li H; Chen D; Wang L; Xu Q; Lu J
Chem Asian J; 2016 Feb; 11(4):512-9. PubMed ID: 26530289
[TBL] [Abstract][Full Text] [Related]
19. Nonvolatile rewritable memory effects in graphene oxide functionalized by conjugated polymer containing fluorene and carbazole units.
Zhang B; Liu YL; Chen Y; Neoh KG; Li YX; Zhu CX; Tok ES; Kang ET
Chemistry; 2011 Sep; 17(37):10304-11. PubMed ID: 21805510
[TBL] [Abstract][Full Text] [Related]
20. Organic nonvolatile memory devices with charge trapping multilayer graphene film.
Ji Y; Choe M; Cho B; Song S; Yoon J; Ko HC; Lee T
Nanotechnology; 2012 Mar; 23(10):105202. PubMed ID: 22361891
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
